Method for manufacturing group III-V compound semiconductors

Abstract

The Group III-V compound semiconductor manufacturing method which pertains to the present invention is a semiconductor manufacturing method employing epitaxy which comprises (a) a step in which growing areas are produced using a mask patterned on a substrate surface and (b) a step in which a Group III-V compound semiconductor layer is grown in the growing areas while forming facet structures. As epitaxy is continued, adjacent facet structures come into contact so that the surface of the semiconductor layer becomes planarized. Since lattice defects extend towards the facet structures, they do not extend towards the surface of the semiconductor layer. Accordingly, the number of lattice defects in the vicinity of the semiconductor layer surface is reduced.

What is claimed is:  
     
       1. A light emitting device, comprising of: 
       (a) A GaN material thick semiconductor layer which is manufactured with following steps:  
       (i) producing growing areas on substrate surface using the mask;  
       the substrate having a different lattice constant and thermal expansion coefficient from the GaN material semiconductor layer,  
       (ii) conducting epitaxy of GaN material semiconductor layer on the growing areas while forming facet structures, and covering the mask with the GaN material semiconductor layer,  
       (iii) continuing epitaxy to planarize the surface of the GaN material thick semiconductor layer,  
       (b) a GaN material semiconductor layer containing double hetero structures on the GaN material thick semiconductor layer.  
     
     
       2. A light emitting device, comprising of: 
       (a) A GaN material thick semiconductor layer which is manufactured with following steps:  
       (i) producing growing areas on substrate surface using the mask;  
       the substrate having a different lattice constant and thermal expansion coefficient from the GaN material semiconductor layer,  
       (ii) conducting epitaxy of GaN material semiconductor layer on the growing areas while forming facet structures, and covering the mask with the GaN material semiconductor layer,  
       (iii) continuing epitaxy to planarize the surface of the GaN material thick semiconductor layer,  
       (b) a GaN material semiconductor layer containing double hetero structures on the GaN material thick semiconductor layer;  
       (c) a resonator edge of the GaN material light emitting device is produced with cleavege plain after the substrate and the mask is excluded.  
     
     
       3. A light emitting device, comprising of: 
       (a) A GaN material thick semiconductor layer which is manufactured with following steps:  
       (i) producing growing areas on substrate surface using the mask;  
       the substrate having a different lattice constant and thermal expansion coefficient from the GaN material semiconductor layer,  
       (ii) conducting epitaxy of GaN material semiconductor layer on the growing areas while forming facet structures, and covering the mask with the GaN material semiconductor layer,  
       (iii) continuing epitaxy to planarize the surface of the GaN material thick semiconductor layer,  
       (b) a GaN material semiconductor layer containing double hetero structures on the GaN material thick semiconductor layer;  
       (c) electrode on back surface of GaN material thick semiconductor layer after the substrate and the mask is excluded.