P

Inventor

GOLDBACH MATTHIAS

DE73 patents
⚠️ This page may combine multiple inventors who share the name “GOLDBACH MATTHIAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

34 patents
US7041568B2May 9, 2006

Method for the production of a self-adjusted structure on a semiconductor wafer

INFINEON TECHNOLOGIES AG212 citations99
US7081384B2Jul 25, 2006

Method of forming a silicon dioxide layer

INFINEON TECHNOLOGIES AG82 citations96
US6559069B2May 6, 2003

Process for the electrochemical oxidation of a semiconductor substrate

INFINEON TECHNOLOGIES AG34 citations93
US7202535B2Apr 10, 2007

Manufacturing method for an integrated semiconductor structure and corresponding integrated semiconductor structure

INFINEON TECHNOLOGIES AG20 citations92
US7005240B2Feb 28, 2006

Method for forming a hard mask in a layer on a planar device

INFINEON TECHNOLOGIES AG52 citations92
US6620724B1Sep 16, 2003

Low resistivity deep trench fill for DRAM and EDRAM applications

INFINEON TECHNOLOGIES AG23 citations92
US7833886B2Nov 16, 2010

Method of producing a semiconductor element in a substrate

INFINEON TECHNOLOGIES AG23 citations90
US7344953B2Mar 18, 2008

Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition

INFINEON TECHNOLOGIES AG19 citations84
US7268381B2Sep 11, 2007

Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them

INFINEON TECHNOLOGIES AG11 citations84
US7192830B2Mar 20, 2007

Method for fabricating a memory cell

INFINEON TECHNOLOGIES AG20 citations84
US7132337B2Nov 7, 2006

Charge-trapping memory device and method of production

INFINEON TECHNOLOGIES AG18 citations84
US7087484B2Aug 8, 2006

Method for fabricating trench capacitors for integrated semiconductor memories

INFINEON TECHNOLOGIES AG13 citations84
US6919255B2Jul 19, 2005

Semiconductor trench structure

INFINEON TECHNOLOGIES AG16 citations84
US6780337B2Aug 24, 2004

Method for trench etching

INFINEON TECHNOLOGIES AG14 citations83
US6878600B2Apr 12, 2005

Method for fabricating trench capacitors and semiconductor device with trench capacitors

INFINEON TECHNOLOGIES AG11 citations74
US6863769B2Mar 8, 2005

Configuration and method for making contact with the back surface of a semiconductor substrate

INFINEON TECHNOLOGIES AG7 citations74
US6861312B2Mar 1, 2005

Method for fabricating a trench structure

INFINEON TECHNOLOGIES AG11 citations74
US6674113B2Jan 6, 2004

Trench capacitor and method for manufacturing the same

INFINEON TECHNOLOGIES AG9 citations74
US6660582B2Dec 9, 2003

Method of forming a vertical field-effect transistor device

INFINEON TECHNOLOGIES AG11 citations74
US7049241B2May 23, 2006

Method for forming a trench in a layer or a layer stack on a semiconductor wafer

INFINEON TECHNOLOGIES AG9 citations73
US7183156B2Feb 27, 2007

Transistor structure, memory cell, DRAM, and method for fabricating a transistor structure in a semiconductor substrate

INFINEON TECHNOLOGIES AG9 citations72
US7084043B2Aug 1, 2006

Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor

INFINEON TECHNOLOGIES AG7 citations70
US7385256B2Jun 10, 2008

Transistor arrangement in monocrystalline substrate having stress exerting insulators

INFINEON TECHNOLOGIES AG3 citations63
US7199414B2Apr 3, 2007

Stress-reduced layer system for use in storage capacitors

INFINEON TECHNOLOGIES AG3 citations63
US7056802B2Jun 6, 2006

Method for fabricating a trench capacitor with an insulation collar which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell

INFINEON TECHNOLOGIES AG2 citations63
US7009900B2Mar 7, 2006

Circuit arrangement for reading out, evaluating and reading in again a charge state into a memory cell

INFINEON TECHNOLOGIES AG5 citations63
US6873000B2Mar 29, 2005

Storage cell field and method of producing the same

INFINEON TECHNOLOGIES AG2 citations63
US6821861B1Nov 23, 2004

Method for fabricating an electrode arrangement for charge storage

INFINEON TECHNOLOGIES AG6 citations63
US6812094B2Nov 2, 2004

Method for roughening a surface of a semiconductor substrate

INFINEON TECHNOLOGIES AG2 citations63
US6806037B2Oct 19, 2004

Method for producing and/or renewing an etching mask

INFINEON TECHNOLOGIES AG2 citations63
US6746880B2Jun 8, 2004

Method for making electrical contact with a rear side of a semiconductor substrate during its processing

INFINEON TECHNOLOGIES AG2 citations63
US7354816B2Apr 8, 2008

Field effect transistor with gate spacer structure and low-resistance channel coupling

INFINEON TECHNOLOGIES AG5 citations62
US7259060B2Aug 21, 2007

Method for fabricating a semiconductor structure

INFINEON TECHNOLOGIES AG3 citations62
US7045855B2May 16, 2006

Semiconductor device and corresponding fabrication method

INFINEON TECHNOLOGIES AG4 citations62

OSRAM OPTO SEMICONDUCTORS GMBH

5 patents

BAARS PETER

3 patents

GLOBALFOUNDRIES INC

2 patents

OSRAM OLED GMBH

2 patents

QIMONDA AG

1 patent

DISCHER THOMAS

1 patent

NANYA TECHNOLOGY CORP

1 patent

AMS OSRAM INT GMBH

1 patent

Showing the top 50 of 73 patents by PatentIndex Score.