Inventor
GOLDBACH MATTHIAS
DE73 patents
⚠️ This page may combine multiple inventors who share the name “GOLDBACH MATTHIAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
34 patentsUS7041568B2May 9, 2006
Method for the production of a self-adjusted structure on a semiconductor wafer
INFINEON TECHNOLOGIES AG212 citations99
US7081384B2Jul 25, 2006
Method of forming a silicon dioxide layer
INFINEON TECHNOLOGIES AG82 citations96
US6559069B2May 6, 2003
Process for the electrochemical oxidation of a semiconductor substrate
INFINEON TECHNOLOGIES AG34 citations93
US7202535B2Apr 10, 2007
Manufacturing method for an integrated semiconductor structure and corresponding integrated semiconductor structure
INFINEON TECHNOLOGIES AG20 citations92
US7005240B2Feb 28, 2006
Method for forming a hard mask in a layer on a planar device
INFINEON TECHNOLOGIES AG52 citations92
US6620724B1Sep 16, 2003
Low resistivity deep trench fill for DRAM and EDRAM applications
INFINEON TECHNOLOGIES AG23 citations92
US7833886B2Nov 16, 2010
Method of producing a semiconductor element in a substrate
INFINEON TECHNOLOGIES AG23 citations90
US7344953B2Mar 18, 2008
Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition
INFINEON TECHNOLOGIES AG19 citations84
US7268381B2Sep 11, 2007
Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them
INFINEON TECHNOLOGIES AG11 citations84
US7192830B2Mar 20, 2007
Method for fabricating a memory cell
INFINEON TECHNOLOGIES AG20 citations84
US7132337B2Nov 7, 2006
Charge-trapping memory device and method of production
INFINEON TECHNOLOGIES AG18 citations84
US7087484B2Aug 8, 2006
Method for fabricating trench capacitors for integrated semiconductor memories
INFINEON TECHNOLOGIES AG13 citations84
US6919255B2Jul 19, 2005
Semiconductor trench structure
INFINEON TECHNOLOGIES AG16 citations84
US6780337B2Aug 24, 2004
Method for trench etching
INFINEON TECHNOLOGIES AG14 citations83
US6878600B2Apr 12, 2005
Method for fabricating trench capacitors and semiconductor device with trench capacitors
INFINEON TECHNOLOGIES AG11 citations74
US6863769B2Mar 8, 2005
Configuration and method for making contact with the back surface of a semiconductor substrate
INFINEON TECHNOLOGIES AG7 citations74
US6861312B2Mar 1, 2005
Method for fabricating a trench structure
INFINEON TECHNOLOGIES AG11 citations74
US6674113B2Jan 6, 2004
Trench capacitor and method for manufacturing the same
INFINEON TECHNOLOGIES AG9 citations74
US6660582B2Dec 9, 2003
Method of forming a vertical field-effect transistor device
INFINEON TECHNOLOGIES AG11 citations74
US7049241B2May 23, 2006
Method for forming a trench in a layer or a layer stack on a semiconductor wafer
INFINEON TECHNOLOGIES AG9 citations73
US7183156B2Feb 27, 2007
Transistor structure, memory cell, DRAM, and method for fabricating a transistor structure in a semiconductor substrate
INFINEON TECHNOLOGIES AG9 citations72
US7084043B2Aug 1, 2006
Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor
INFINEON TECHNOLOGIES AG7 citations70
US7385256B2Jun 10, 2008
Transistor arrangement in monocrystalline substrate having stress exerting insulators
INFINEON TECHNOLOGIES AG3 citations63
US7199414B2Apr 3, 2007
Stress-reduced layer system for use in storage capacitors
INFINEON TECHNOLOGIES AG3 citations63
US7056802B2Jun 6, 2006
Method for fabricating a trench capacitor with an insulation collar which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell
INFINEON TECHNOLOGIES AG2 citations63
US7009900B2Mar 7, 2006
Circuit arrangement for reading out, evaluating and reading in again a charge state into a memory cell
INFINEON TECHNOLOGIES AG5 citations63
US6873000B2Mar 29, 2005
Storage cell field and method of producing the same
INFINEON TECHNOLOGIES AG2 citations63
US6821861B1Nov 23, 2004
Method for fabricating an electrode arrangement for charge storage
INFINEON TECHNOLOGIES AG6 citations63
US6812094B2Nov 2, 2004
Method for roughening a surface of a semiconductor substrate
INFINEON TECHNOLOGIES AG2 citations63
US6806037B2Oct 19, 2004
Method for producing and/or renewing an etching mask
INFINEON TECHNOLOGIES AG2 citations63
US6746880B2Jun 8, 2004
Method for making electrical contact with a rear side of a semiconductor substrate during its processing
INFINEON TECHNOLOGIES AG2 citations63
US7354816B2Apr 8, 2008
Field effect transistor with gate spacer structure and low-resistance channel coupling
INFINEON TECHNOLOGIES AG5 citations62
US7259060B2Aug 21, 2007
Method for fabricating a semiconductor structure
INFINEON TECHNOLOGIES AG3 citations62
US7045855B2May 16, 2006
Semiconductor device and corresponding fabrication method
INFINEON TECHNOLOGIES AG4 citations62
OSRAM OPTO SEMICONDUCTORS GMBH
5 patentsUS12040317B2Jul 16, 2024
Optoelectronic device
OSRAM OPTO SEMICONDUCTORS GMBH5 citations84
US12300674B2May 13, 2025
Optoelectronic device
OSRAM OPTO SEMICONDUCTORS GMBH1 citations63
US12288830B2Apr 29, 2025
Method for singulating components from a component composite, and component
OSRAM OPTO SEMICONDUCTORS GMBH0 citations62
US12388058B2Aug 12, 2025
Optoelectronic device
OSRAM OPTO SEMICONDUCTORS GMBH0 citations61
US12308359B2May 20, 2025
Optoelectronic component and method for producing the same
OSRAM OPTO SEMICONDUCTORS GMBH0 citations61
BAARS PETER
3 patentsUS8735232B2May 27, 2014
Methods for forming semiconductor devices
BAARS PETER21 citations93
US8647938B1Feb 11, 2014
SRAM integrated circuits with buried saddle-shaped FINFET and methods for their fabrication
BAARS PETER22 citations93
US8575013B2Nov 5, 2013
Replacement gate fabrication methods
BAARS PETER2 citations63
GLOBALFOUNDRIES INC
2 patentsOSRAM OLED GMBH
2 patentsQIMONDA AG
1 patentDISCHER THOMAS
1 patentNANYA TECHNOLOGY CORP
1 patentAMS OSRAM INT GMBH
1 patentShowing the top 50 of 73 patents by PatentIndex Score.