Inventor
CHOI YONG-SUK
KR47 patents
⚠️ This page may combine multiple inventors who share the name “CHOI YONG-SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS7973314B2Jul 5, 2011
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD182 citations98
US9490876B2Nov 8, 2016
Electronic device and operating method thereof
SAMSUNG ELECTRONICS CO LTD13 citations84
US7172938B2Feb 6, 2007
Method of manufacturing a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD10 citations84
US7329365B2Feb 12, 2008
Etchant composition for indium oxide layer and etching method using the same
SAMSUNG ELECTRONICS CO LTD14 citations82
US7256444B2Aug 14, 2007
Local SONOS-type nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US7037781B2May 2, 2006
Local SONOS-type nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations74
US11711632B2Jul 25, 2023
Image sensor including two boosting drivers
SAMSUNG ELECTRONICS CO LTD2 citations73
US6878987B2Apr 12, 2005
Split gate memory device
SAMSUNG ELECTRONICS CO LTD5 citations71
US6847078B2Jan 25, 2005
Non-volatile memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US10104325B2Oct 16, 2018
Charge pump and devices including same
SAMSUNG ELECTRONICS CO LTD4 citations68
US11601609B2Mar 7, 2023
Image sensors and methods of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US11252363B2Feb 15, 2022
Image sensors and methods of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US7192833B2Mar 20, 2007
Flash memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7160777B2Jan 9, 2007
Split-gate nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7091090B2Aug 15, 2006
Nonvolatile memory device and method of forming same
SAMSUNG ELECTRONICS CO LTD6 citations63
US12372885B2Jul 29, 2025
Substrate processing apparatus and method of fabricating semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12262132B2Mar 25, 2025
Image sensor with boosting driver
SAMSUNG ELECTRONICS CO LTD0 citations62
US12003876B2Jun 4, 2024
Image sensor including two boosting drivers
SAMSUNG ELECTRONICS CO LTD0 citations62
US11927890B1Mar 12, 2024
Substrate processing apparatus and method of fabricating semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US7602008B2Oct 13, 2009
Split gate non-volatile memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7320913B2Jan 22, 2008
Methods of forming split-gate non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD2 citations62
US7351629B2Apr 1, 2008
Method of forming non-volatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations60
US7256448B2Aug 14, 2007
Split gate type nonvolatile semiconductor memory device, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations60
US7029974B2Apr 18, 2006
Split gate type nonvolatile semiconductor memory device, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations60
US7531410B2May 12, 2009
Semiconductor flash memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7397079B2Jul 8, 2008
Non-volatile memory device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7554150B2Jun 30, 2009
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US7855410B2Dec 21, 2010
Semiconductor memory devices having a floating gate with a projecting portion and methods of forming semiconductor memory devices having a floating gate with a projecting portion
SAMSUNG ELECTRONICS CO LTD0 citations50
US7232725B2Jun 19, 2007
Split gate memory device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations49
US7642593B2Jan 5, 2010
Nonvolatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations41
SK HYNIX INC
4 patentsUS11062757B1Jul 13, 2021
Data receiving device, a semiconductor apparatus, and a semiconductor system using the data receiving device
SK HYNIX INC2 citations70
US10305500B1May 28, 2019
Amplification circuit, and frequency dividing circuit, semiconductor apparatus and semiconductor system including the amplification circuit and or frequency dividing circuit
SK HYNIX INC1 citations62
US12189416B2Jan 7, 2025
Clock generating circuit and clock distribution network and semiconductor apparatus including the clock generating circuit
SK HYNIX INC1 citations61
US10734951B2Aug 4, 2020
Receiver circuit
SK HYNIX INC0 citations48