Inventor
CHUNG HYUNSOO
KR41 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG HYUNSOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
35 patentsUS10211070B2Feb 19, 2019
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD51 citations97
US9245771B2Jan 26, 2016
Semiconductor packages having through electrodes and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US9165916B2Oct 20, 2015
Semiconductor package and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US8941216B2Jan 27, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9853012B2Dec 26, 2017
Semiconductor packages having through electrodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US9508704B2Nov 29, 2016
Method of fabricating semiconductor package, semiconductor package formed thereby, and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD11 citations83
US9287140B2Mar 15, 2016
Semiconductor packages having through electrodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US8927426B2Jan 6, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US10699915B2Jun 30, 2020
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9859204B2Jan 2, 2018
Semiconductor devices with redistribution pads
SAMSUNG ELECTRONICS CO LTD2 citations72
US11362054B2Jun 14, 2022
Semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11296004B2Apr 5, 2022
Semiconductor package including heat redistribution layers
SAMSUNG ELECTRONICS CO LTD4 citations71
US11923292B2Mar 5, 2024
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US11574819B2Feb 7, 2023
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10937667B2Mar 2, 2021
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12388024B2Aug 12, 2025
Semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations61
US12033948B2Jul 9, 2024
Semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations61
US12009328B2Jun 11, 2024
Semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11705418B2Jul 18, 2023
Semiconductor package with conductive bump on conductive post including an intermetallic compound layer
SAMSUNG ELECTRONICS CO LTD1 citations60
US11024575B2Jun 1, 2021
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12525586B2Jan 13, 2026
Semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations53
US9362172B2Jun 7, 2016
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12598758B2Apr 7, 2026
Semiconductor device including dummy pad
SAMSUNG ELECTRONICS CO LTD0 citations51
US12582009B2Mar 17, 2026
Semiconductor package including pads
SAMSUNG ELECTRONICS CO LTD0 citations51
US12525585B2Jan 13, 2026
Semiconductor package including sub-package
SAMSUNG ELECTRONICS CO LTD0 citations51
US12446237B2Oct 14, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12159858B2Dec 3, 2024
Semiconductor package and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9960112B2May 1, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12512446B2Dec 30, 2025
Semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations50
US12476179B2Nov 18, 2025
Semiconductor package including through-silicon via and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12166013B2Dec 10, 2024
Semiconductor package, and a package on package type semiconductor package having the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11488937B2Nov 1, 2022
Semiconductor package with stack structure and method of manufacturing the semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations50
US11430772B2Aug 30, 2022
Semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations50
US12154889B2Nov 26, 2024
Semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations49
US9355961B2May 31, 2016
Semiconductor devices having through-electrodes and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations41
LEE HO-JIN
3 patentsUS9171753B2Oct 27, 2015
Semiconductor devices having conductive via structures and methods for fabricating the same
LEE HO-JIN7 citations83
US9153489B2Oct 6, 2015
Microelectronic devices having conductive through via electrodes insulated by gap regions
LEE HO-JIN5 citations72
US8564139B2Oct 22, 2013
Semiconductor devices including protected barrier layers
LEE HO-JIN4 citations62