Inventor
OH SANG-HYUN
KR61 patents
⚠️ This page may combine multiple inventors who share the name “OH SANG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYNIX SEMICONDUCTOR INC
8 patentsUS6930910B2Aug 16, 2005
Magnetic random access memory cell device using magnetic tunnel junction
HYNIX SEMICONDUCTOR INC31 citations92
US6773929B2Aug 10, 2004
Ferroelectric memory device and method for manufacturing the same
HYNIX SEMICONDUCTOR INC22 citations91
US6927121B2Aug 9, 2005
Method for manufacturing ferroelectric random access memory capacitor
HYNIX SEMICONDUCTOR INC6 citations62
US6927437B2Aug 9, 2005
Ferroelectric memory device
HYNIX SEMICONDUCTOR INC4 citations61
US6919212B2Jul 19, 2005
Method for fabricating ferroelectric random access memory device with merged-top electrode-plateline capacitor
HYNIX SEMICONDUCTOR INC2 citations59
US7998814B2Aug 16, 2011
Semiconductor memory device and method of fabricating the same
HYNIX SEMICONDUCTOR INC0 citations52
US7696554B2Apr 13, 2010
Flash memory device
HYNIX SEMICONDUCTOR INC1 citations52
US7316955B2Jan 8, 2008
Method of manufacturing semiconductor device
HYNIX SEMICONDUCTOR INC0 citations52
UNIV MINNESOTA
8 patentsUS10888875B2Jan 12, 2021
Electrodes formed from 2D materials for dielectrophoresis and systems and methods for utilizing the same
UNIV MINNESOTA7 citations84
US11885985B2Jan 30, 2024
Graphene plasmon resonators
UNIV MINNESOTA2 citations71
US9777372B2Oct 3, 2017
Methods for manufacturing nano-gap and angstrom-gap articles
UNIV MINNESOTA3 citations68
US11688820B2Jun 27, 2023
Photodetectors
UNIV MINNESOTA4 citations66
US11707748B2Jul 25, 2023
Electrodes formed from 2D materials for dielectrophoresis and systems and methods for utilizing the same
UNIV MINNESOTA0 citations62
US12468075B2Nov 11, 2025
Graphene plasmon resonators
UNIV MINNESOTA0 citations61
US12325031B2Jun 10, 2025
Graphene-based dielectrophoresis sensor and method
UNIV MINNESOTA0 citations52
US9334571B2May 10, 2016
Method of forming individual metallic microstructures
UNIV MINNESOTA0 citations52
SEOUL VIOSYS CO LTD
8 patentsUS9520536B2Dec 13, 2016
Light emitting diode chip having electrode pad
SEOUL VIOSYS CO LTD11 citations83
US10608141B2Mar 31, 2020
Light emitting diode chip having electrode pad
SEOUL VIOSYS CO LTD1 citations72
US10186638B2Jan 22, 2019
Light emitting element
SEOUL VIOSYS CO LTD1 citations62
US8963183B2Feb 24, 2015
Light emitting diode having distributed Bragg reflector
SEOUL VIOSYS CO LTD3 citations62
US10707382B2Jul 7, 2020
Light emitting element
SEOUL VIOSYS CO LTD0 citations52
US10084112B2Sep 25, 2018
Light emitting diode and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations51
US9929314B2Mar 27, 2018
Light emitting diode chip having electrode pad
SEOUL VIOSYS CO LTD0 citations51
US9608165B2Mar 28, 2017
Light emitting diode and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations51
SK HYNIX INC
8 patentsUS9000563B2Apr 7, 2015
Capacitor and register of semiconductor device, memory system including the semiconductor device, and method of manufacturing the semiconductor device
SK HYNIX INC4 citations73
US10727247B2Jul 28, 2020
Semiconductor device and manufacturing method of the semiconductor device
SK HYNIX INC2 citations71
US8829598B2Sep 9, 2014
Non-volatile memory device having three dimensional, vertical channel, alternately stacked gate electrode structure
SK HYNIX INC6 citations68
US12538783B2Jan 27, 2026
Semiconductor device with dual slit structures and offset contact plug for enhanced vertical connectivity
SK HYNIX INC0 citations61
US12014978B2Jun 18, 2024
Semiconductor device and manufacturing method of semiconductor device
SK HYNIX INC0 citations61
US11610915B2Mar 21, 2023
Semiconductor device and manufacturing method of the semiconductor device
SK HYNIX INC0 citations61
US11024647B2Jun 1, 2021
Semiconductor device and manufacturing method of the semiconductor device
SK HYNIX INC0 citations61
US9257442B2Feb 9, 2016
3-D non-volatile memory device and method of manufacturing the same
SK HYNIX INC1 citations61
IBM
3 patentsUS7135724B2Nov 14, 2006
Structure and method for making strained channel field effect transistor using sacrificial spacer
IBM47 citations96
US7176481B2Feb 13, 2007
In situ doped embedded sige extension and source/drain for enhanced PFET performance
IBM52 citations92
US7645656B2Jan 12, 2010
Structure and method for making strained channel field effect transistor using sacrificial spacer
IBM7 citations74
KIM YE SEUL
2 patentsJOO HAN-SOO
2 patentsUNIV CALIFORNIA
1 patentOH SANG-HYUN
1 patentSEOUL OPTO DEVICE CO LTD
1 patentKOREA ADVANCED INST SCI & TECH
1 patentNORRIS DAVID J
1 patentAHN JUNG RYUL
1 patentOH SANG HYUN
1 patentPARK SUN MI
1 patentPARK SUN-MI
1 patentSHIN HACK SEOB
1 patentLee seo hyun
1 patentShowing the top 50 of 61 patents by PatentIndex Score.