Light emitting diode

Abstract

Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.

The invention claimed is: 
     
       1. A light emitting diode (LED), comprising:
 a light emitting stacked structure; and 
 an electrode structure comprising an extending pattern disposed on the light emitting stacked structure, 
 wherein the electrode structure comprises:
 reflectors disposed along the pattern on the light emitting stacked structure; and 
 a pad material layer entirely covering the reflectors, 
 wherein the reflectors comprise a material having a higher reflectance and a higher insulating property than those of the pad material layer. 
 
 
     
     
       2. The LED of  claim 1 , wherein the reflectors comprise a distributed Bragg reflector (DBR). 
     
     
       3. The LED of  claim 1 , wherein the light emitting stacked structure comprises a p-type region comprising a transparent electrode layer exposed at an upper portion of the stacked structure, and
 wherein the reflectors contact a top surface of the transparent electrode layer. 
 
     
     
       4. The LED of  claim 1 , wherein the light emitting stacked structure comprises a n-type region comprising a transparent electrode layer exposed at an upper portion of the stacked structure, and
 wherein the reflectors contact a top surface of the transparent electrode layer. 
 
     
     
       5. The LED of  claim 1 , wherein the light emitting stacked structure comprises Group-III nitride-based semiconductor layers. 
     
     
       6. The LED of  claim 1 , wherein: the electrode structure comprises extension portions and an electrode pad, the extension portions and the electrode pad comprising the pad material layer; the extension portions extending from the electrode pad in a linear pattern; and the reflectors are arranged in a dot-pattern along the extension portions. 
     
     
       7. The LED of  claim 6 , wherein the reflectors further comprise a pad-type reflector disposed under the electrode pad. 
     
     
       8. The LED of  claim 1 , wherein the pad material layer comprises a contact material layer directly covering the reflectors, and a bonding material layer positioned at the uppermost portion of the pad material layer. 
     
     
       9. The LED of  claim 8 , wherein the contact material layer comprises Cr. 
     
     
       10. The LED of  claim 8 , wherein the bonding material layer comprises Au. 
     
     
       11. The LED of  claim 8 , wherein the reflectors comprise a material having a higher reflectance and a higher insulating property than that of the contact material layer.