Inventor

LUO TIEN-YING

US22 patents

⚠️ This page may combine multiple inventors who share the name “LUO TIEN-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LUO TIEN-YING

FREESCALE SEMICONDUCTOR INC

Multi-layer dielectric containing diffusion barrier material

Radical oxidation and/or nitridation during metal oxide layer deposition process

Method of forming a gate dielectric by in-situ plasma

Method for removing nanoclusters from selected regions

Method for retaining nanocluster size and electrical characteristics during processing

Method of making a nitrided gate dielectric

Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regions

Dual high-k oxides with sige channel

Semiconductor structure pattern formation

Method of making a high quality thin dielectric layer

Method of removing defects from a dielectric material in a semiconductor

Method for forming a deposited oxide layer

Method of forming a gate dielectric

Method of forming a semiconductor device with multiple tensile stressor layers

Multilayer silicon nitride deposition for a semiconductor device

GLOBALFOUNDRIES INC

Conformal nitridation of one or more fin-type transistor layers

Forming a gate by depositing a thin barrier layer on a titanium nitride cap

Devices and methods of forming finFETs with self aligned fin formation

Conformal nitridation of one or more fin-type transistor layers

Depositing an etch stop layer before a dummy cap layer to improve gate performance

LUO TIEN YING

Dual high-K oxides with SiGe channel

ADETUTU OLUBUNMI O

Electronic device with a gate electrode having at least two portions