Inventor
LASKY JEROME B
44 patents
⚠️ This page may combine multiple inventors who share the name “LASKY JEROME B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
43 patentsUS6689650B2Feb 10, 2004
Fin field effect transistor with self-aligned gate
IBM216 citations99
US6483156B1Nov 19, 2002
Double planar gated SOI MOSFET structure
IBM210 citations99
US5291439AMar 1, 1994
Semiconductor memory cell and memory array with inversion layer
IBM158 citations97
US6660596B2Dec 9, 2003
Double planar gated SOI MOSFET structure
IBM46 citations96
US6635970B2Oct 21, 2003
Power distribution design method for stacked flip-chip packages
IBM61 citations96
US5545581AAug 13, 1996
Plug strap process utilizing selective nitride and oxide etches
IBM71 citations96
US4755478AJul 5, 1988
Method of forming metal-strapped polysilicon gate electrode for FET device
IBM106 citations96
US4735679AApr 5, 1988
Method of improving silicon-on-insulator uniformity
IBM76 citations96
US6038168AMar 14, 2000
Hot-electron programmable latch for integrated circuit fuse applications and method of programming therefor
IBM62 citations95
US5434109AJul 18, 1995
Oxidation of silicon nitride in semiconductor devices
IBM76 citations95
US4601779AJul 22, 1986
Method of producing a thin silicon-on-insulator layer
IBM123 citations95
US5226732AJul 13, 1993
Emissivity independent temperature measurement systems
IBM85 citations94
US7652313B2Jan 26, 2010
Deep trench contact and isolation of buried photodetectors
IBM22 citations93
US7183573B2Feb 27, 2007
Disposable spacer for symmetric and asymmetric Schottky contact to SOI mosfet
IBM16 citations93
US6727118B2Apr 27, 2004
Power distribution design method for stacked flip-chip packages
IBM22 citations93
US6436744B1Aug 20, 2002
Method and structure for creating high density buried contact for use with SOI processes for high performance logic
IBM22 citations93
US6339005B1Jan 15, 2002
Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET
IBM41 citations93
US7217968B2May 15, 2007
Recessed gate for an image sensor
IBM20 citations92
US6541351B1Apr 1, 2003
Method for limiting divot formation in post shallow trench isolation processes
IBM53 citations92
US5185294AFeb 9, 1993
Boron out-diffused surface strap process
IBM42 citations92
US4799990AJan 24, 1989
Method of self-aligning a trench isolation structure to an implanted well region
IBM32 citations92
US4649627AMar 17, 1987
Method of fabricating silicon-on-insulator transistors with a shared element
IBM55 citations92
US4558508ADec 17, 1985
Process of making dual well CMOS semiconductor structure with aligned field-dopings using single masking step
IBM48 citations92
US4532700AAug 6, 1985
Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer
IBM52 citations92
US6472232B1Oct 29, 2002
Semiconductor temperature monitor
IBM16 citations91
US6255179B1Jul 3, 2001
Plasma etch pre-silicide clean
IBM24 citations91
US6184132B1Feb 6, 2001
Integrated cobalt silicide process for semiconductor devices
IBM22 citations91
US4379727AApr 12, 1983
Method of laser annealing of subsurface ion implanted regions
IBM52 citations85
US7405139B2Jul 29, 2008
Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch
IBM9 citations84
US6197656B1Mar 6, 2001
Method of forming planar isolation and substrate contacts in SIMOX-SOI.
IBM17 citations84
US7205591B2Apr 17, 2007
Pixel sensor cell having reduced pinning layer barrier potential and method thereof
IBM6 citations74
US5605862AFeb 25, 1997
Process for making low-leakage contacts
IBM6 citations74
US7572701B2Aug 11, 2009
Recessed gate for a CMOS image sensor
IBM7 citations73
US6638629B2Oct 28, 2003
Semiconductor temperature monitor
IBM6 citations72
US6121064ASep 19, 2000
STI fill for SOI which makes SOI inspectable
IBM12 citations70
US7459360B2Dec 2, 2008
Method of forming pixel sensor cell having reduced pinning layer barrier potential
IBM4 citations63
US7173303B2Feb 6, 2007
FIN field effect transistor with self-aligned gate
IBM5 citations63
US6015745AJan 18, 2000
Method for semiconductor fabrication
IBM6 citations63
US7495254B2Feb 24, 2009
Test structure and method for detecting and studying crystal lattice dislocation defects in integrated circuit devices
IBM4 citations61
US7989358B2Aug 2, 2011
Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch
IBM0 citations52
US6793735B2Sep 21, 2004
Integrated cobalt silicide process for semiconductor devices
IBM0 citations50
US6335272B1Jan 1, 2002
Buried butted contact and method for fabricating
IBM0 citations49
US6153934ANov 28, 2000
Buried butted contact and method for fabricating
IBM1 citations49