P

Inventor

LASKY JEROME B

44 patents
⚠️ This page may combine multiple inventors who share the name “LASKY JEROME B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

43 patents
US6689650B2Feb 10, 2004

Fin field effect transistor with self-aligned gate

IBM216 citations99
US6483156B1Nov 19, 2002

Double planar gated SOI MOSFET structure

IBM210 citations99
US5291439AMar 1, 1994

Semiconductor memory cell and memory array with inversion layer

IBM158 citations97
US6660596B2Dec 9, 2003

Double planar gated SOI MOSFET structure

IBM46 citations96
US6635970B2Oct 21, 2003

Power distribution design method for stacked flip-chip packages

IBM61 citations96
US5545581AAug 13, 1996

Plug strap process utilizing selective nitride and oxide etches

IBM71 citations96
US4755478AJul 5, 1988

Method of forming metal-strapped polysilicon gate electrode for FET device

IBM106 citations96
US4735679AApr 5, 1988

Method of improving silicon-on-insulator uniformity

IBM76 citations96
US6038168AMar 14, 2000

Hot-electron programmable latch for integrated circuit fuse applications and method of programming therefor

IBM62 citations95
US5434109AJul 18, 1995

Oxidation of silicon nitride in semiconductor devices

IBM76 citations95
US4601779AJul 22, 1986

Method of producing a thin silicon-on-insulator layer

IBM123 citations95
US5226732AJul 13, 1993

Emissivity independent temperature measurement systems

IBM85 citations94
US7652313B2Jan 26, 2010

Deep trench contact and isolation of buried photodetectors

IBM22 citations93
US7183573B2Feb 27, 2007

Disposable spacer for symmetric and asymmetric Schottky contact to SOI mosfet

IBM16 citations93
US6727118B2Apr 27, 2004

Power distribution design method for stacked flip-chip packages

IBM22 citations93
US6436744B1Aug 20, 2002

Method and structure for creating high density buried contact for use with SOI processes for high performance logic

IBM22 citations93
US6339005B1Jan 15, 2002

Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET

IBM41 citations93
US7217968B2May 15, 2007

Recessed gate for an image sensor

IBM20 citations92
US6541351B1Apr 1, 2003

Method for limiting divot formation in post shallow trench isolation processes

IBM53 citations92
US5185294AFeb 9, 1993

Boron out-diffused surface strap process

IBM42 citations92
US4799990AJan 24, 1989

Method of self-aligning a trench isolation structure to an implanted well region

IBM32 citations92
US4649627AMar 17, 1987

Method of fabricating silicon-on-insulator transistors with a shared element

IBM55 citations92
US4558508ADec 17, 1985

Process of making dual well CMOS semiconductor structure with aligned field-dopings using single masking step

IBM48 citations92
US4532700AAug 6, 1985

Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer

IBM52 citations92
US6472232B1Oct 29, 2002

Semiconductor temperature monitor

IBM16 citations91
US6255179B1Jul 3, 2001

Plasma etch pre-silicide clean

IBM24 citations91
US6184132B1Feb 6, 2001

Integrated cobalt silicide process for semiconductor devices

IBM22 citations91
US4379727AApr 12, 1983

Method of laser annealing of subsurface ion implanted regions

IBM52 citations85
US7405139B2Jul 29, 2008

Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch

IBM9 citations84
US6197656B1Mar 6, 2001

Method of forming planar isolation and substrate contacts in SIMOX-SOI.

IBM17 citations84
US7205591B2Apr 17, 2007

Pixel sensor cell having reduced pinning layer barrier potential and method thereof

IBM6 citations74
US5605862AFeb 25, 1997

Process for making low-leakage contacts

IBM6 citations74
US7572701B2Aug 11, 2009

Recessed gate for a CMOS image sensor

IBM7 citations73
US6638629B2Oct 28, 2003

Semiconductor temperature monitor

IBM6 citations72
US6121064ASep 19, 2000

STI fill for SOI which makes SOI inspectable

IBM12 citations70
US7459360B2Dec 2, 2008

Method of forming pixel sensor cell having reduced pinning layer barrier potential

IBM4 citations63
US7173303B2Feb 6, 2007

FIN field effect transistor with self-aligned gate

IBM5 citations63
US6015745AJan 18, 2000

Method for semiconductor fabrication

IBM6 citations63
US7495254B2Feb 24, 2009

Test structure and method for detecting and studying crystal lattice dislocation defects in integrated circuit devices

IBM4 citations61
US7989358B2Aug 2, 2011

Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch

IBM0 citations52
US6793735B2Sep 21, 2004

Integrated cobalt silicide process for semiconductor devices

IBM0 citations50
US6335272B1Jan 1, 2002

Buried butted contact and method for fabricating

IBM0 citations49
US6153934ANov 28, 2000

Buried butted contact and method for fabricating

IBM1 citations49

US ENERGY

1 patent