Inventor
MAEDA TAKEO
JP37 patents
⚠️ This page may combine multiple inventors who share the name “MAEDA TAKEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
26 patentsUS5506168AApr 9, 1996
Method for manufacturing semiconductor device
TOSHIBA KK89 citations96
US5278099AJan 11, 1994
Method for manufacturing a semiconductor device having wiring electrodes
TOSHIBA KK56 citations96
US5677229AOct 14, 1997
Method for manufacturing semiconductor device isolation region
TOSHIBA KK22 citations92
US5512772AApr 30, 1996
Semiconductor device having bipolar transistor and MOS transistor
TOSHIBA KK27 citations92
US5091760AFeb 25, 1992
Semiconductor device
TOSHIBA KK32 citations92
US4931407AJun 5, 1990
Method for manufacturing integrated bipolar and MOS transistors
TOSHIBA KK24 citations92
US4900257AFeb 13, 1990
Method of making a polycide gate using a titanium nitride capping layer
TOSHIBA KK29 citations92
US4663825AMay 12, 1987
Method of manufacturing semiconductor device
TOSHIBA KK26 citations92
US4643777AFeb 17, 1987
Method of manufacturing a semiconductor device comprising resistors of high and low resistances
TOSHIBA KK28 citations92
US5576572ANov 19, 1996
Semiconductor integrated circuit device and method of manufacturing the same
TOSHIBA KK25 citations91
US5442226AAug 15, 1995
Bipolar transistor having an emitter electrode formed of polysilicon
TOSHIBA KK24 citations91
US5340751AAug 23, 1994
Method of manufacturing a BiMOS device
TOSHIBA KK8 citations74
US5091322AFeb 25, 1992
Semiconductor device and method of manufacturing the same
TOSHIBA KK16 citations74
US4769337ASep 6, 1988
Method of forming selective polysilicon wiring layer to source, drain and emitter regions by implantation through polysilicon layer
TOSHIBA KK11 citations74
US5583363ADec 10, 1996
Inverter gate circuit of a bi-CMOS structure having common layers between fets and bipolar transistors
TOSHIBA KK9 citations73
US5489795AFeb 6, 1996
Semiconductor integrated circuit device having double well structure
TOSHIBA KK16 citations73
US5406115AApr 11, 1995
Semiconductor device including bipolar transistor having shallowed base and method for manufacturing the same
TOSHIBA KK8 citations73
US5597757AJan 28, 1997
Method of manufacturing a semiconductor device including bipolar and MOS transistors
TOSHIBA KK3 citations63
US5523242AJun 4, 1996
Method of manufacturing a BiMOS device
TOSHIBA KK2 citations63
US5399894AMar 21, 1995
Semiconductor device having bipolar transistor and MOS transistor
TOSHIBA KK4 citations63
US5341021AAug 23, 1994
Bipolar transistor having an electrode structure suitable for integration
TOSHIBA KK3 citations63
US5093707AMar 3, 1992
Semiconductor device with bipolar and cmos transistors
TOSHIBA KK2 citations63
US5075752ADec 24, 1991
Bi-cmos semiconductor device having memory cells formed in isolated wells
TOSHIBA KK5 citations63
US5485034AJan 16, 1996
Semiconductor device including bipolar transistor having shallowed base
TOSHIBA KK3 citations62
US5243557ASep 7, 1993
Bi-CMOS semiconductor integrated circuit
TOSHIBA KK4 citations61
US5014106AMay 7, 1991
Semiconductor device for use in a hybrid LSI circuit
TOSHIBA KK5 citations58
HITACHI LTD
8 patentsUS4336475AJun 22, 1982
Slotless brushless motor
HITACHI LTD52 citations92
US4384248AMay 17, 1983
Method and apparatus for detecting shortcircuit in arm of GTO inverter
HITACHI LTD25 citations82
US4173193ANov 6, 1979
Controlling apparatus for electric sewing machine
HITACHI LTD20 citations82
US4099108AJul 4, 1978
Variable speed control apparatus for induction motor
HITACHI LTD17 citations74
US3939387AFeb 17, 1976
Variable frequency power converter for ac motor drive
HITACHI LTD16 citations74
US4012679AMar 15, 1977
Method and apparatus for controlling the operation of synchronous motor
HITACHI LTD18 citations73
US3997825ADec 14, 1976
Method and apparatus for controlling synchronous motor
HITACHI LTD17 citations71
US4156899AMay 29, 1979
Current source inverter
HITACHI LTD7 citations68