Inventor
CLARKE ROWLAND C
US16 patents
⚠️ This page may combine multiple inventors who share the name “CLARKE ROWLAND C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NORTHROP GRUMMAN CORP
11 patentsUS5925895AJul 20, 1999
Silicon carbide power MESFET with surface effect supressive layer
NORTHROP GRUMMAN CORP75 citations96
US5612547AMar 18, 1997
Silicon carbide static induction transistor
NORTHROP GRUMMAN CORP26 citations92
US5945701AAug 31, 1999
Static induction transistor
NORTHROP GRUMMAN CORP48 citations91
US5903020AMay 11, 1999
Silicon carbide static induction transistor structure
NORTHROP GRUMMAN CORP36 citations91
US5705830AJan 6, 1998
Static induction transistors
NORTHROP GRUMMAN CORP27 citations91
US7982239B2Jul 19, 2011
Power switching transistors
NORTHROP GRUMMAN CORP17 citations81
US7217947B2May 15, 2007
Semiconductor light source and method of making
NORTHROP GRUMMAN CORP12 citations79
US7253083B2Aug 7, 2007
Method of thinning a semiconductor structure
NORTHROP GRUMMAN CORP10 citations78
US7098093B2Aug 29, 2006
HEMT device and method of making
NORTHROP GRUMMAN CORP9 citations70
US5807773ASep 15, 1998
Self-aligned gate fabrication process for silicon carbide static induction transistors
NORTHROP GRUMMAN CORP3 citations61
US7535039B1May 19, 2009
Vertically integrated dual gate transistor structure and method of making same
NORTHROP GRUMMAN CORP2 citations59
WESTINGHOUSE ELECTRIC CORP
4 patentsUS5198695AMar 30, 1993
Semiconductor wafer with circuits bonded to a substrate
WESTINGHOUSE ELECTRIC CORP44 citations92
US4544417AOct 1, 1985
Transient capless annealing process for the activation of ion implanted compound semiconductors
WESTINGHOUSE ELECTRIC CORP21 citations79
US4583107AApr 15, 1986
Castellated gate field effect transistor
WESTINGHOUSE ELECTRIC CORP15 citations73
US5501173AMar 26, 1996
Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates
WESTINGHOUSE ELECTRIC CORP12 citations71