Inventor
YOU WOOKYUNG
KR32 patents
⚠️ This page may combine multiple inventors who share the name “YOU WOOKYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
27 patentsUS9711453B2Jul 18, 2017
Semiconductor devices including a capping layer
SAMSUNG ELECTRONICS CO LTD12 citations92
US10269712B2Apr 23, 2019
Semiconductor devices including a capping layer
SAMSUNG ELECTRONICS CO LTD6 citations84
US9953924B2Apr 24, 2018
Semiconductor devices including a capping layer
SAMSUNG ELECTRONICS CO LTD10 citations84
US9842803B2Dec 12, 2017
Semiconductor devices including gaps between conductive patterns
SAMSUNG ELECTRONICS CO LTD5 citations84
US9524937B2Dec 20, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9929099B2Mar 27, 2018
Planarized interlayer dielectric with air gap isolation
SAMSUNG ELECTRONICS CO LTD7 citations82
US9972528B2May 15, 2018
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US11139244B2Oct 5, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US11424182B2Aug 23, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations70
US9520300B2Dec 13, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US11776906B2Oct 3, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US12014980B2Jun 18, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11764149B2Sep 19, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations60
US11646263B2May 9, 2023
Semiconductor device and method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11133249B2Sep 28, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations58
US12598987B2Apr 7, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations57
US11948883B2Apr 2, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations57
US10707164B2Jul 7, 2020
Semiconductor devices including a capping layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US10497647B2Dec 3, 2019
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10141258B2Nov 27, 2018
Semiconductor devices having staggered air gaps
SAMSUNG ELECTRONICS CO LTD0 citations52
US9911644B2Mar 6, 2018
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9748170B2Aug 29, 2017
Semiconductor devices having staggered air gaps
SAMSUNG ELECTRONICS CO LTD0 citations52
US9558994B2Jan 31, 2017
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9406553B2Aug 2, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10186485B2Jan 22, 2019
Planarized interlayer dielectric with air gap isolation
SAMSUNG ELECTRONICS CO LTD0 citations51
US12341097B2Jun 24, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations49
US10090381B2Oct 2, 2018
Semiconductor device including air-gap
SAMSUNG ELECTRONICS CO LTD0 citations40