Inventor
LEE NAEIN
KR25 patents
⚠️ This page may combine multiple inventors who share the name “LEE NAEIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS9842803B2Dec 12, 2017
Semiconductor devices including gaps between conductive patterns
SAMSUNG ELECTRONICS CO LTD5 citations84
US9524937B2Dec 20, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US10199325B2Feb 5, 2019
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations83
US9929099B2Mar 27, 2018
Planarized interlayer dielectric with air gap isolation
SAMSUNG ELECTRONICS CO LTD7 citations82
US9252235B2Feb 2, 2016
Semiconductor devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations82
US9972528B2May 15, 2018
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US10049997B2Aug 14, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US9312171B2Apr 12, 2016
Semiconductor devices having through-electrodes and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US10438802B2Oct 8, 2019
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations62
US9520300B2Dec 13, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US10497647B2Dec 3, 2019
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10141258B2Nov 27, 2018
Semiconductor devices having staggered air gaps
SAMSUNG ELECTRONICS CO LTD0 citations52
US9911644B2Mar 6, 2018
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9748170B2Aug 29, 2017
Semiconductor devices having staggered air gaps
SAMSUNG ELECTRONICS CO LTD0 citations52
US9082874B2Jul 14, 2015
Semiconductor device including transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8937343B2Jan 20, 2015
Semiconductor device including transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US10186485B2Jan 22, 2019
Planarized interlayer dielectric with air gap isolation
SAMSUNG ELECTRONICS CO LTD0 citations51
US10109665B2Oct 23, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US9548389B2Jan 17, 2017
Semiconductor devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9576848B2Feb 21, 2017
Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US9299836B2Mar 29, 2016
Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US9953827B2Apr 24, 2018
Method of forming semiconductor device having dielectric layer and related system
SAMSUNG ELECTRONICS CO LTD0 citations38