Inventor
LUO QING
CN28 patents
⚠️ This page may combine multiple inventors who share the name “LUO QING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INST OF MICROELECTRONICS CAS
12 patentsUS12260902B2Mar 25, 2025
Complementary storage unit and method of preparing the same, and complementary memory
INST OF MICROELECTRONICS CAS0 citations62
US11776607B2Oct 3, 2023
Fusion memory
INST OF MICROELECTRONICS CAS0 citations59
US12205630B2Jan 21, 2025
Symmetric memory cell and BNN circuit
INST OF MICROELECTRONICS CAS0 citations52
US12495557B2Dec 9, 2025
Method of preparing programmable diode, programmable diode and ferroelectric memory
INST OF MICROELECTRONICS CAS0 citations51
US12124945B2Oct 22, 2024
Neural network operation device
INST OF MICROELECTRONICS CAS0 citations51
US11641787B2May 2, 2023
Self-rectifying resistive memory and fabrication method thereof
INST OF MICROELECTRONICS CAS0 citations51
US11205750B2Dec 21, 2021
1S1R memory integrated structure with larger selector surface area which can effectively suppress leakage current in the cross array without increasing the overall size of the integrated structure and method for fabricating the same
INST OF MICROELECTRONICS CAS0 citations51
US10665780B2May 26, 2020
Selection device for use in bipolar resistive memory and manufacturing method therefor
INST OF MICROELECTRONICS CAS0 citations51
US9455741B2Sep 27, 2016
Method for collecting signal with sampling frequency lower than Nyquist frequency
INST OF MICROELECTRONICS CAS0 citations50
US12002500B2Jun 4, 2024
Writing method and erasing method of fusion memory
INST OF MICROELECTRONICS CAS0 citations48
US9762217B2Sep 12, 2017
Random sampler adapted to one-dimension slow-varying signal
INST OF MICROELECTRONICS CAS0 citations39
US9418843B2Aug 16, 2016
Method for manufacturing ordered nanowire array of NiO doped with Pt in situ
INST OF MICROELECTRONICS CAS0 citations37