Inventor
YANG RONGSHENG
US27 patents
⚠️ This page may combine multiple inventors who share the name “YANG RONGSHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
20 patentsUS6503805B2Jan 7, 2003
Channel implant through gate polysilicon
MICRON TECHNOLOGY INC125 citations99
US6011307AJan 4, 2000
Anisotropic conductive interconnect material for electronic devices, method of use and resulting product
MICRON TECHNOLOGY INC155 citations99
US6093661AJul 25, 2000
Integrated circuitry and semiconductor processing method of forming field effect transistors
MICRON TECHNOLOGY INC74 citations96
US7638392B2Dec 29, 2009
Methods of forming capacitor structures
MICRON TECHNOLOGY INC23 citations92
US7442600B2Oct 28, 2008
Methods of forming threshold voltage implant regions
MICRON TECHNOLOGY INC23 citations92
US6781212B1Aug 24, 2004
Selectively doped trench device isolation
MICRON TECHNOLOGY INC33 citations92
US6744102B2Jun 1, 2004
MOS transistors with nitrogen in the gate oxide of the p-channel transistor
MICRON TECHNOLOGY INC14 citations92
US6541395B1Apr 1, 2003
Semiconductor processing method of forming field effect transistors
MICRON TECHNOLOGY INC31 citations92
US6417546B2Jul 9, 2002
P-type FET in a CMOS with nitrogen atoms in the gate dielectric
MICRON TECHNOLOGY INC21 citations92
US7157324B2Jan 2, 2007
Transistor structure having reduced transistor leakage attributes
MICRON TECHNOLOGY INC6 citations74
US6162693ADec 19, 2000
Channel implant through gate polysilicon
MICRON TECHNOLOGY INC12 citations74
US7259442B2Aug 21, 2007
Selectively doped trench device isolation
MICRON TECHNOLOGY INC3 citations63
US7105899B2Sep 12, 2006
Transistor structure having reduced transistor leakage attributes
MICRON TECHNOLOGY INC2 citations63
US6630706B2Oct 7, 2003
Localized array threshold voltage implant to enhance charge storage within DRAM memory cells
MICRON TECHNOLOGY INC4 citations63
US6215151B1Apr 10, 2001
Methods of forming integrated circuitry and integrated circuitry
MICRON TECHNOLOGY INC3 citations63
US5946564AAug 31, 1999
Methods of forming integrated circuitry and integrated circuitry
MICRON TECHNOLOGY INC3 citations63
US7767514B2Aug 3, 2010
Methods of implanting dopant into channel regions
MICRON TECHNOLOGY INC0 citations52
US7674670B2Mar 9, 2010
Methods of forming threshold voltage implant regions
MICRON TECHNOLOGY INC0 citations52
US6815287B2Nov 9, 2004
Localized array threshold voltage implant to enhance charge storage within DRAM memory cells
MICRON TECHNOLOGY INC0 citations52
US6800520B1Oct 5, 2004
Localized array threshold voltage implant enhance charge storage within DRAM memory cells
MICRON TECHNOLOGY INC0 citations52
OMNIVISION TECH INC
3 patentsUS9054007B2Jun 9, 2015
Image sensor pixel cell with switched deep trench isolation structure
OMNIVISION TECH INC25 citations92
US9496304B2Nov 15, 2016
Image sensor pixel cell with switched deep trench isolation structure
OMNIVISION TECH INC10 citations84
US7875918B2Jan 25, 2011
Multilayer image sensor pixel structure for reducing crosstalk
OMNIVISION TECH INC10 citations84