Inventor
LIM HYUNG KYU
KR28 patents
⚠️ This page may combine multiple inventors who share the name “LIM HYUNG KYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HANMI PHARM IND CO LTD
11 patentsUS9801950B2Oct 31, 2017
Liquid formulation of long acting insulinotropic peptide conjugate
HANMI PHARM IND CO LTD7 citations84
US9724420B2Aug 8, 2017
Liquid formulation of protein conjugate comprising an oxyntomodulin derivative covalently linked to a non-peptidyl polymer to an immunoglobulin FC region
HANMI PHARM IND CO LTD9 citations84
US10487128B2Nov 26, 2019
Conjugate of biologically active polypeptide monomer and immunoglobulin Fc fragment with reduced receptor-mediated clearance, and the method for preparing the same
HANMI PHARM IND CO LTD2 citations73
US10279041B2May 7, 2019
Liquid formulation of long-lasting protein conjugate comprising the oxyntomodulin and an immunoglobulin fragment
HANMI PHARM IND CO LTD2 citations73
US9833516B2Dec 5, 2017
Liquid formulation of long-acting insulin and insulinotropic peptide
HANMI PHARM IND CO LTD5 citations73
US11071785B2Jul 27, 2021
Liquid formulation of long-lasting protein conjugate comprising the oxyntomodulin and an immunoglobulin Fc region
HANMI PHARM IND CO LTD0 citations62
US10987424B2Apr 27, 2021
Liquid formulation of long-acting insulin conjugate
HANMI PHARM IND CO LTD1 citations62
US10987425B2Apr 27, 2021
Liquid formulation of long-acting human growth hormone immunoglobulin conjugate
HANMI PHARM IND CO LTD0 citations59
US10647753B2May 12, 2020
Insulin analogs and use thereof
HANMI PHARM IND CO LTD0 citations52
US10441665B2Oct 15, 2019
Liquid formulation of long acting insulinotropic peptide conjugate
HANMI PHARM IND CO LTD0 citations52
US10017557B2Jul 10, 2018
Insulin analogs and use thereof
HANMI PHARM IND CO LTD0 citations52
SAMSUNG ELECTRONICS CO LTD
10 patentsUS5642309AJun 24, 1997
Auto-program circuit in a nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD72 citations96
US5326999AJul 5, 1994
Non-volatile semiconductor memory device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD104 citations96
US5349559ASep 20, 1994
Internal voltage generating circuit
SAMSUNG ELECTRONICS CO LTD69 citations95
US5715206AFeb 3, 1998
Dynamic random access memory having sequential word line refresh
SAMSUNG ELECTRONICS CO LTD24 citations92
US5311076AMay 10, 1994
Tristate data output buffer having reduced switching noise and intermediate-level setting
SAMSUNG ELECTRONICS CO LTD36 citations92
US5293350AMar 8, 1994
Nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD35 citations92
US4972100ANov 20, 1990
Data output buffer circuit for byte-wide memory
SAMSUNG ELECTRONICS CO LTD24 citations92
US5396113AMar 7, 1995
Electrically programmable internal power voltage generating circuit
SAMSUNG ELECTRONICS CO LTD48 citations91
US6141282AOct 31, 2000
Circuit for designating an operating mode of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD6 citations69
US5901094AMay 4, 1999
Circuit for designating an operating mode of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD11 citations69
LG CHEMICAL LTD
3 patentsUS9178209B2Nov 3, 2015
Cathode for lithium secondary battery and lithium secondary battery comprising the same
LG CHEMICAL LTD7 citations82
US9379377B2Jun 28, 2016
Cathode for lithium secondary battery and lithium secondary battery comprising the same
LG CHEMICAL LTD0 citations50
US8728650B2May 20, 2014
Apparatus and method for enhancing impregnation with electrolyte in secondary battery
LG CHEMICAL LTD1 citations50