Inventor
CHUNG DAE-HYUN
KR18 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG DAE-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7038971B2May 2, 2006
Multi-clock domain data input-processing device having clock-receiving locked loop and clock signal input method thereof
SAMSUNG ELECTRONICS CO LTD50 citations92
US6920080B2Jul 19, 2005
Methods for generating output control signals in synchronous semiconductor memory devices and related semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD22 citations92
US6380799B1Apr 30, 2002
Internal voltage generation circuit having stable operating characteristics at low external supply voltages
SAMSUNG ELECTRONICS CO LTD27 citations92
US6696862B2Feb 24, 2004
Semiconductor memory device input circuit
SAMSUNG ELECTRONICS CO LTD21 citations89
US6639868B2Oct 28, 2003
SDRAM having data latch circuit for outputting input data in synchronization with a plurality of control signals
SAMSUNG ELECTRONICS CO LTD14 citations84
US8004328B2Aug 23, 2011
AC-coupling phase interpolator and delay-locked loop using the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US6327217B1Dec 4, 2001
Variable latency buffer circuits, latency determination circuits and methods of operation thereof
SAMSUNG ELECTRONICS CO LTD15 citations83
US6950488B2Sep 27, 2005
Delay locked-loop circuit for reducing load of variable delay unit at high-frequency operation and locking external clock signal stably
SAMSUNG ELECTRONICS CO LTD10 citations74
US6614278B2Sep 2, 2003
Pulsed signal transition delay adjusting circuit
SAMSUNG ELECTRONICS CO LTD6 citations74
US6987407B2Jan 17, 2006
Delay locked loops having delay time compensation and methods for compensating for delay time of the delay locked loops
SAMSUNG ELECTRONICS CO LTD7 citations73
US6882580B2Apr 19, 2005
Memory devices having power supply routing for delay locked loops that counteracts power noise effects
SAMSUNG ELECTRONICS CO LTD11 citations73
US6778464B2Aug 17, 2004
Expanded operating frequency synchronous semiconductor memory device having wave pipeline structure and wave pipeline control method thereof
SAMSUNG ELECTRONICS CO LTD8 citations73
US8693603B2Apr 8, 2014
Semiconductor devices, methods of operating semiconductor devices, and systems having the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7737748B2Jun 15, 2010
Level shifter of semiconductor device and method for controlling duty ratio in the device
SAMSUNG ELECTRONICS CO LTD5 citations62
US6812765B2Nov 2, 2004
Pulsed signal transition delay adjusting circuit
SAMSUNG ELECTRONICS CO LTD0 citations52
US7863736B2Jan 4, 2011
Semiconductor device and signal terminating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations51