Inventor

UENO SHUICHI

JP47 patents

⚠️ This page may combine multiple inventors who share the name “UENO SHUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UENO SHUICHI

MITSUBISHI ELECTRIC CORP

Method of manufacturing semiconductor device having trench type element isolation regions

Semiconductor device and method of fabricating the same

Semiconductor device having control electrodes with different impurity concentrations

Thin film transistor and a method of manufacturing thereof

Thin film transistor with particular nitrogen concentration

Buried-channel semiconductor device, and manufacturing method thereof

Semiconductor device and method of fabricating the same

Nonvolatile semiconductor memory device having a drain region of different impurity density and conductivity types

Thin film transistor and a method of manufacturing thereof

Field effect transistor and method of manufacturing same

Method for making a thin film transistor

Semiconductor device having nitrogen introduced in its polysilicon gate

Semiconductor MOSFET device having a shallow nitrogen implanted channel region

Semiconductor device and method of manufacturing the same

Semiconductor device with nitrogen implanted channel region

Semiconductor device and method of manufacturing the same

Memory cell evaluation semiconductor device, method of fabricating the same and memory cell evaluation method

Field effect transistor and method of manufacturing same

Magnetic sensor and method for manufacturing same

Current detection apparatus and power conversion apparatus

Electric power converting apparatus

RENESAS TECH CORP

Nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device

Semiconductor tunneling magneto resistance device and method of manufacturing the same

Method of manufacturing field effect transistors

Semiconductor device and manufacturing method thereof

Magnetic memory device

Semiconductor device

MOSFET with graded gate oxide layer

Magnetic memory device

RENESAS ELECTRONICS CORP

Magnetic memory device having a recording layer

Semiconductor device and method of manufacturing the same

Method for manufacturing a magnetic memory device and magnetic memory device

Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor

MITSUBISHI GAS CHEMICAL CO

Acid anhydride ester and composition thereof, and heat-curable resin composition and cured product thereof

Epoxy resin curing agent

Reactor for producing a nitrile compound and method for operating the reactor

NISSAN MOTOR

Seat belt holder position adjuster

Seat belt retractor with a tension eliminator

SATO TAKASHI

Epoxy resin composition, cured object obtained therefrom, and light-emitting diode

Thermosetting resin composition for surface protection layers

NIPPON STEEL CORP

Methods for manufacturing tubes filled with powdery and granular substances

TAKENAGA TAKASHI

Magnetic memory device having a recording layer

FURUTA HARUO

Method for manufacturing magnetic storage device and magnetic storage device

TANIZAKI HIROAKI

Magnetic memory device

MATSUDA RYOJI

Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor

RENEASA TECHNOLOGY CORP

Magnetic memory device