Inventor
LIN HENGYANG JAMES
US11 patents
⚠️ This page may combine multiple inventors who share the name “LIN HENGYANG JAMES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
8 patentsUS6992927B1Jan 31, 2006
Nonvolatile memory cell
NAT SEMICONDUCTOR CORP38 citations92
US6184557B1Feb 6, 2001
I/O circuit that utilizes a pair of well structures as resistors to delay an ESD event and as diodes for ESD protection
NAT SEMICONDUCTOR CORP40 citations92
US6169310B1Jan 2, 2001
Electrostatic discharge protection device
NAT SEMICONDUCTOR CORP34 citations92
US6100590AAug 8, 2000
Low capacitance multilevel metal interconnect structure and method of manufacture
NAT SEMICONDUCTOR CORP36 citations92
US7558969B1Jul 7, 2009
Anti-pirate circuit for protection against commercial integrated circuit pirates
NAT SEMICONDUCTOR CORP21 citations90
US7656698B1Feb 2, 2010
Non-volatile memory cell with improved programming technique with decoupling pass gates and equalize transistors
NAT SEMICONDUCTOR CORP14 citations84
US8363469B1Jan 29, 2013
All-NMOS 4-transistor non-volatile memory cell
NAT SEMICONDUCTOR CORP6 citations72
US6801046B1Oct 5, 2004
Method of testing the electrostatic discharge performance of an IC device
NAT SEMICONDUCTOR CORP4 citations57