Inventor · disambiguated record
Hsin-Neng Tai
Also filed as: TAI HSIN-NENG
9 granted patents·1 pending application·41 citations·filing 2013–2016
84Inventor score
Top patents by PatentIndex Score
10 records- 0192US9123771B2Shallow trench isolation integration methods and devices formed therebyGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 1, 2015·13 cites·19 claims
- 0291US8877580B1Reduction of oxide recesses for gate height controlGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 4, 2014·13 cites·11 claims
- 0387US9583527B1Contact resistance reductionOMNIVISION TECH INC·Filed 2016·Granted Feb 28, 2017·9 cites·20 claims
- 0482US9385192B2Shallow trench isolation integration methods and devices formed therebyGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·3 cites·7 claims
- 0569US9343499B1Integrated circuit stack with strengthened wafer bondingOMNIVISION TECH INC·Filed 2015·Granted May 17, 2016·2 cites·20 claims
- 0661US9093560B2Gate height uniformity in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 28, 2015·1 cites·14 claims
- 0753US9257516B2Reduction of oxide recesses for gate height controlGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 9, 2016·0 cites·19 claims
- 0849US9349814B2Gate height uniformity in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted May 24, 2016·0 cites·20 claims
- 0945US8927356B1Removal of nitride bump in opening replacement gate structureGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 6, 2015·0 cites·20 claims
- 1042US2015087134A1Semiconductor isolation region uniformityGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
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