Inventor
KNOLL LARS
CH19 patents
⚠️ This page may combine multiple inventors who share the name “KNOLL LARS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI ENERGY LTD
12 patentsUS12598773B2Apr 7, 2026
Trench sic power semiconductor device
HITACHI ENERGY LTD0 citations61
US12426343B2Sep 23, 2025
Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereof
HITACHI ENERGY LTD0 citations60
US11967616B2Apr 23, 2024
Vertical silicon carbide power MOSFET and IGBT and a method of manufacturing the same
HITACHI ENERGY LTD0 citations60
US12113131B2Oct 8, 2024
Strain enhanced SiC power semiconductor device and method of manufacturing
HITACHI ENERGY LTD0 citations59
US12538536B2Jan 27, 2026
Power semiconductor device and operating method
HITACHI ENERGY LTD0 citations58
US12230675B2Feb 18, 2025
Planar SiC MOSFET with retrograde implanted channel
HITACHI ENERGY LTD0 citations50
US12513978B2Dec 30, 2025
Manufacturing method for a power semiconductor device and power semiconductor device
HITACHI ENERGY LTD0 citations49
US12062698B2Aug 13, 2024
Silicon carbide transistor device
HITACHI ENERGY LTD0 citations49
US12501666B2Dec 16, 2025
Power semiconductor device with an insulated trench gate electrode
HITACHI ENERGY LTD0 citations48
US11888037B2Jan 30, 2024
Self-aligned field plate mesa FPM SiC schottky barrier diode
HITACHI ENERGY LTD0 citations46
US12593466B2Mar 31, 2026
Power field-effect transistor and manufacturing method
HITACHI ENERGY LTD0 citations45
US12501668B2Dec 16, 2025
Power semiconductor device and a method for producing a power semiconductor device
HITACHI ENERGY LTD0 citations44
ABB SCHWEIZ AG
5 patentsUS10490658B2Nov 26, 2019
Power semiconductor device
ABB SCHWEIZ AG1 citations60
US10516022B2Dec 24, 2019
Method for manufacturing a semiconductor device
ABB SCHWEIZ AG1 citations59
US10361082B2Jul 23, 2019
Semiconductor device and method for manufacturing such a semiconductor device
ABB SCHWEIZ AG1 citations59
US10164126B2Dec 25, 2018
Junction barrier schottky diode with enhanced surge current capability
ABB SCHWEIZ AG1 citations50
US10553437B2Feb 4, 2020
Semiconductor device and method for manufacturing such a semiconductor device
ABB SCHWEIZ AG0 citations49