Inventor
WANG FU-CHENG
US19 patents
⚠️ This page may combine multiple inventors who share the name “WANG FU-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
11 patentsUS6548842B1Apr 15, 2003
Field-effect transistor for alleviating short-channel effects
NAT SEMICONDUCTOR CORP240 citations99
US6566204B1May 20, 2003
Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors
NAT SEMICONDUCTOR CORP142 citations98
US6461932B1Oct 8, 2002
Semiconductor trench isolation process that utilizes smoothening layer
NAT SEMICONDUCTOR CORP79 citations97
US7701005B1Apr 20, 2010
Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics
NAT SEMICONDUCTOR CORP33 citations96
US6599804B2Jul 29, 2003
Fabrication of field-effect transistor for alleviating short-channel effects
NAT SEMICONDUCTOR CORP57 citations96
US7145191B1Dec 5, 2006
P-channel field-effect transistor with reduced junction capacitance
NAT SEMICONDUCTOR CORP57 citations95
US7879669B1Feb 1, 2011
Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length
NAT SEMICONDUCTOR CORP17 citations92
US7595244B1Sep 29, 2009
Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics
NAT SEMICONDUCTOR CORP18 citations92
US6797576B1Sep 28, 2004
Fabrication of p-channel field-effect transistor for reducing junction capacitance
NAT SEMICONDUCTOR CORP35 citations92
US7785971B1Aug 31, 2010
Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage
NAT SEMICONDUCTOR CORP6 citations74
US7700980B1Apr 20, 2010
Structure and fabrication of field-effect transistor for alleviating short-channel effects
NAT SEMICONDUCTOR CORP1 citations63