Inventor
HAVEMANN ROBERT H
US78 patents
⚠️ This page may combine multiple inventors who share the name “HAVEMANN ROBERT H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
43 patentsUS5668398ASep 16, 1997
Multilevel interconnect structure with air gaps formed between metal leads
TEXAS INSTRUMENTS INC106 citations99
US5488015AJan 30, 1996
Method of making an interconnect structure with an integrated low density dielectric
TEXAS INSTRUMENTS INC148 citations99
US5461003AOct 24, 1995
Multilevel interconnect structure with air gaps formed between metal leads
TEXAS INSTRUMENTS INC427 citations99
US4958213ASep 18, 1990
Method for forming a transistor base region under thick oxide
TEXAS INSTRUMENTS INC269 citations99
US6130156AOct 10, 2000
Variable doping of metal plugs for enhanced reliability
TEXAS INSTRUMENTS INC87 citations98
US5661344AAug 26, 1997
Porous dielectric material with a passivation layer for electronics applications
TEXAS INSTRUMENTS INC113 citations98
US5482894AJan 9, 1996
Method of fabricating a self-aligned contact using organic dielectric materials
TEXAS INSTRUMENTS INC135 citations98
US6355559B1Mar 12, 2002
Passivation of inlaid metallization
TEXAS INSTRUMENTS INC73 citations96
US6278174B1Aug 21, 2001
Integrated circuit insulator and structure using low dielectric insulator material including HSQ and fluorinated oxide
TEXAS INSTRUMENTS INC71 citations96
US6156651ADec 5, 2000
Metallization method for porous dielectrics
TEXAS INSTRUMENTS INC72 citations96
US5936295AAug 10, 1999
Multilevel interconnect structure with air gaps formed between metal leads
TEXAS INSTRUMENTS INC70 citations96
US5891804AApr 6, 1999
Process for conductors with selective deposition
TEXAS INSTRUMENTS INC77 citations96
US5789319AAug 4, 1998
Method of dual masking for selective gap fill of submicron interconnects
TEXAS INSTRUMENTS INC71 citations96
US5747880AMay 5, 1998
Interconnect structure with an integrated low density dielectric
TEXAS INSTRUMENTS INC63 citations96
US5565384AOct 15, 1996
Self-aligned via using low permittivity dielectric
TEXAS INSTRUMENTS INC94 citations96
US5472913ADec 5, 1995
Method of fabricating porous dielectric material with a passivation layer for electronics applications
TEXAS INSTRUMENTS INC88 citations96
US5403759AApr 4, 1995
Method of making thin film transistor and a silicide local interconnect
TEXAS INSTRUMENTS INC52 citations96
US5252502AOct 12, 1993
Method of making MOS VLSI semiconductor device with metal gate
TEXAS INSTRUMENTS INC92 citations96
US4788160ANov 29, 1988
Process for formation of shallow silicided junctions
TEXAS INSTRUMENTS INC92 citations96
US6358849B1Mar 19, 2002
Integrated circuit interconnect and method
TEXAS INSTRUMENTS INC66 citations95
US6365451B2Apr 2, 2002
Transistor and method
TEXAS INSTRUMENTS INC18 citations93
US6245672B1Jun 12, 2001
Method of forming diffusion barriers for copper metallization in integrated cirucits
TEXAS INSTRUMENTS INC20 citations93
US6077782AJun 20, 2000
Method to improve the texture of aluminum metallization
TEXAS INSTRUMENTS INC25 citations93
US5789818AAug 4, 1998
Structure with selective gap fill of submicron interconnects
TEXAS INSTRUMENTS INC33 citations93
US5668411ASep 16, 1997
Diffusion barrier trilayer for minimizing reaction between metallization layers of integrated circuits
TEXAS INSTRUMENTS INC43 citations93
US5468662ANov 21, 1995
Method of making thin film transistor and a silicide local interconnect
TEXAS INSTRUMENTS INC29 citations93
US5451530ASep 19, 1995
Method for forming integrated circuits having buried doped regions
TEXAS INSTRUMENTS INC26 citations93
US5124271AJun 23, 1992
Process for fabricating a BiCMOS integrated circuit
TEXAS INSTRUMENTS INC26 citations93
US5003365AMar 26, 1991
Bipolar transistor with a sidewall-diffused subcollector
TEXAS INSTRUMENTS INC41 citations93
US4835580AMay 30, 1989
Schottky barrier diode and method
TEXAS INSTRUMENTS INC53 citations93
US4816423AMar 28, 1989
Bicmos process for forming shallow npn emitters and mosfet source/drains
TEXAS INSTRUMENTS INC28 citations93
US4774204ASep 27, 1988
Method for forming self-aligned emitters and bases and source/drains in an integrated circuit
TEXAS INSTRUMENTS INC36 citations93
US4706378ANov 17, 1987
Method of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantation
TEXAS INSTRUMENTS INC28 citations93
US6589865B2Jul 8, 2003
Low pressure, low temperature, semiconductor gap filling process
TEXAS INSTRUMENTS INC23 citations92
US6333265B1Dec 25, 2001
Low pressure, low temperature, semiconductor gap filling process
TEXAS INSTRUMENTS INC22 citations92
US6261915B1Jul 17, 2001
Process of making polysilicon resistor
TEXAS INSTRUMENTS INC21 citations92
US5465005ANov 7, 1995
Polysilicon resistor structure including polysilicon contacts
TEXAS INSTRUMENTS INC28 citations92
US5236857AAug 17, 1993
Resistor structure and process
TEXAS INSTRUMENTS INC22 citations92
US4541167ASep 17, 1985
Method for integrated circuit device isolation
TEXAS INSTRUMENTS INC34 citations92
US5814558ASep 29, 1998
Interconnect capacitance between metal leads
TEXAS INSTRUMENTS INC17 citations84
US5751066AMay 12, 1998
Structure with selective gap fill of submicron interconnects
TEXAS INSTRUMENTS INC15 citations82
US5374845ADec 20, 1994
Process for reduced emitter-base capacitance in bipolar transistor
TEXAS INSTRUMENTS INC17 citations82
US5217924AJun 8, 1993
Method for forming shallow junctions with a low resistivity silicide layer
TEXAS INSTRUMENTS INC19 citations82
NOVELLUS SYSTEMS INC
7 patentsUS6844258B1Jan 18, 2005
Selective refractory metal and nitride capping
NOVELLUS SYSTEMS INC260 citations98
US6753250B1Jun 22, 2004
Method of fabricating low dielectric constant dielectric films
NOVELLUS SYSTEMS INC103 citations97
US7157798B1Jan 2, 2007
Selective refractory metal and nitride capping
NOVELLUS SYSTEMS INC68 citations96
US6995439B1Feb 7, 2006
Method of fabricating low dielectric constant dielectric films
NOVELLUS SYSTEMS INC62 citations95
US8039379B1Oct 18, 2011
Nanoparticle cap layer
NOVELLUS SYSTEMS INC23 citations90
US7994640B1Aug 9, 2011
Nanoparticle cap layer
NOVELLUS SYSTEMS INC28 citations90
US6873026B1Mar 29, 2005
Inhomogeneous materials having physical properties decoupled from desired functions
NOVELLUS SYSTEMS INC33 citations90
Showing the top 50 of 78 patents by PatentIndex Score.