Inventor
GRAY PETER B
US24 patents
⚠️ This page may combine multiple inventors who share the name “GRAY PETER B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
16 patentsUS8810005B1Aug 19, 2014
Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region
IBM7 citations84
US8716837B2May 6, 2014
Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
IBM5 citations84
US7709338B2May 4, 2010
BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
IBM14 citations84
US7002190B1Feb 21, 2006
Method of collector formation in BiCMOS technology
IBM12 citations84
US6448124B1Sep 10, 2002
Method for epitaxial bipolar BiCMOS
IBM16 citations84
US7972919B2Jul 5, 2011
Vertical PNP transistor and method of making same
IBM9 citations83
US7217628B2May 15, 2007
High performance integrated vertical transistors and method of making the same
IBM8 citations74
US6909164B2Jun 21, 2005
High performance vertical PNP transistor and method
IBM6 citations74
US6670255B2Dec 30, 2003
Method of fabricating lateral diodes and bipolar transistors
IBM9 citations74
US8710500B2Apr 29, 2014
Bipolar junction transistor with a self-aligned emitter and base
IBM5 citations73
US8921195B2Dec 30, 2014
Isolation scheme for bipolar transistors in BiCMOS technology
IBM2 citations63
US9059196B2Jun 16, 2015
Bipolar junction transistors with self-aligned terminals
IBM2 citations59
US7214593B2May 8, 2007
Passivation for improved bipolar yield
IBM3 citations59
US7491985B2Feb 17, 2009
Method of collector formation in BiCMOS technology
IBM1 citations52
US7265010B2Sep 4, 2007
High performance vertical PNP transistor method
IBM0 citations52
US8513706B2Aug 20, 2013
Heterojunction bipolar transistors with reduced base resistance
IBM0 citations51
GLOBALFOUNDRIES INC
3 patentsUS10367083B2Jul 30, 2019
Compact device structures for a bipolar junction transistor
GLOBALFOUNDRIES INC5 citations73
US9318584B2Apr 19, 2016
Isolation scheme for bipolar transistors in BiCMOS technology
GLOBALFOUNDRIES INC0 citations52
US9231087B2Jan 5, 2016
Bipolar junction transistors with self-aligned terminals
GLOBALFOUNDRIES INC1 citations51
CAMILLO-CASTILLO RENATA
2 patentsUS8536012B2Sep 17, 2013
Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
CAMILLO-CASTILLO RENATA13 citations84
US8405186B2Mar 26, 2013
Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure
CAMILLO-CASTILLO RENATA7 citations83