Inventor
BLOMBERG DANIEL J
US40 patents
⚠️ This page may combine multiple inventors who share the name “BLOMBERG DANIEL J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LIN XIN
18 patentsUS8669640B2Mar 11, 2014
Bipolar transistor
LIN XIN12 citations84
US8198703B2Jun 12, 2012
Zener diode with reduced substrate current
LIN XIN19 citations84
US8847358B2Sep 30, 2014
Bipolar transistor
LIN XIN4 citations73
US8212292B2Jul 3, 2012
High gain tunable bipolar transistor
LIN XIN5 citations70
US8946041B2Feb 3, 2015
Methods for forming high gain tunable bipolar transistors
LIN XIN3 citations63
US9893164B2Feb 13, 2018
Bipolar transistor device fabrication methods
LIN XIN0 citations52
US9496333B2Nov 15, 2016
Resurf high voltage diode
LIN XIN0 citations52
US9466687B2Oct 11, 2016
Methods for producing bipolar transistors with improved stability
LIN XIN1 citations52
US9202887B2Dec 1, 2015
Methods for fabricating improved bipolar transistors
LIN XIN0 citations52
US9184257B2Nov 10, 2015
Semiconductor device and related fabrication methods
LIN XIN0 citations52
US9130006B2Sep 8, 2015
Semiconductor device with buried conduction path
LIN XIN0 citations52
US9099489B2Aug 4, 2015
Bipolar transistor with high breakdown voltage
LIN XIN0 citations52
US9059008B2Jun 16, 2015
Resurf high voltage diode
LIN XIN1 citations52
US8946860B2Feb 3, 2015
Semiconductor device and related fabrication methods
LIN XIN0 citations52
US8648443B2Feb 11, 2014
Bipolar transistor with improved stability
LIN XIN1 citations52
US8546229B2Oct 1, 2013
Methods for fabricating bipolar transistors with improved gain
LIN XIN0 citations52
US8134219B2Mar 13, 2012
Schottky diodes
LIN XIN0 citations52
US9054149B2Jun 9, 2015
Semiconductor device with diagonal conduction path
LIN XIN1 citations48
FREESCALE SEMICONDUCTOR INC
10 patentsUS9590097B2Mar 7, 2017
Semiconductor devices and related fabrication methods
FREESCALE SEMICONDUCTOR INC7 citations84
US9543454B1Jan 10, 2017
Diodes with multiple junctions
FREESCALE SEMICONDUCTOR INC6 citations84
US7915704B2Mar 29, 2011
Schottky diode
FREESCALE SEMICONDUCTOR INC8 citations84
US9728600B2Aug 8, 2017
Partially biased isolation in semiconductor devices
FREESCALE SEMICONDUCTOR INC5 citations73
US9680011B2Jun 13, 2017
Self-adjusted isolation bias in semiconductor devices
FREESCALE SEMICONDUCTOR INC5 citations73
US9601564B2Mar 21, 2017
Deep trench isolation
FREESCALE SEMICONDUCTOR INC4 citations73
US9343526B2May 17, 2016
Deep trench isolation
FREESCALE SEMICONDUCTOR INC3 citations73
US8946862B2Feb 3, 2015
Methods for forming bipolar transistors
FREESCALE SEMICONDUCTOR INC2 citations63
US8384193B2Feb 26, 2013
Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain
FREESCALE SEMICONDUCTOR INC3 citations63
US7972913B2Jul 5, 2011
Method for forming a Schottky diode
FREESCALE SEMICONDUCTOR INC4 citations63
YANG HONGNING
5 patentsUS9306060B1Apr 5, 2016
Semiconductor devices and related fabrication methods
YANG HONGNING19 citations92
US9231083B2Jan 5, 2016
High breakdown voltage LDMOS device
YANG HONGNING8 citations84
US9136323B2Sep 15, 2015
Drain-end drift diminution in semiconductor devices
YANG HONGNING6 citations84
US8853780B2Oct 7, 2014
Semiconductor device with drain-end drift diminution
YANG HONGNING7 citations84
US9601595B2Mar 21, 2017
High breakdown voltage LDMOS device
YANG HONGNING3 citations73