Semiconductor device and related fabrication methods

Abstract

Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a collector region of semiconductor material having a first conductivity type, a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type, and a doped region of semiconductor material having the second conductivity type, wherein the doped region is electrically connected to the base region and the collector region resides between the base region and the doped region. In exemplary embodiments, the dopant concentration of the doped region is greater than a dopant concentration of the collector region to deplete the collector region as the electrical potential of the base region exceeds that of the collector region.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a collector region of semiconductor material having a first conductivity type; 
 a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type; and 
 a first doped region of semiconductor material having the second conductivity type, wherein:
 the first doped region is electrically connected to the base region; 
 the collector region resides between the base region and the first doped region; 
 the collector region overlies the first doped region; and 
 a dopant concentration of the first doped region is greater than a dopant concentration of the collector region. 
 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the dopant concentration of the first doped region is at least ten times greater than the dopant concentration of the collector region. 
     
     
       3. The semiconductor device of  claim 1 , wherein the collector region comprises an epitaxial layer overlying the first doped region. 
     
     
       4. A semiconductor device comprising:
 a collector region of semiconductor material having a first conductivity type; 
 a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type; and 
 a first doped region of semiconductor material having the second conductivity type; 
 a support layer of semiconductor material; 
 a buried layer of dielectric material overlying the support layer; and 
 a second doped region of semiconductor material overlying the buried layer, wherein:
 the first doped region is electrically connected to the base region; 
 the collector region resides between the base region and the first doped region; and 
 the collector region overlies the second doped region. 
 
 
     
     
       5. The semiconductor device of  claim 4 , wherein the first doped region abuts the second doped region. 
     
     
       6. The semiconductor device of  claim 5 , wherein:
 a dopant concentration of the first doped region is greater than a dopant concentration of the collector region; and 
 a dopant concentration of the second doped region is greater than the dopant concentration of the collector region. 
 
     
     
       7. The semiconductor device of  claim 1 , wherein the first doped region and the base region are physically isolated by the collector region. 
     
     
       8. A bipolar transistor comprising:
 a buried region having a first conductivity type; 
 a collector region overlying the buried region, the collector region having a second conductivity type opposite the first conductivity type; 
 a base region within the collector region, the base region having the first conductivity type, wherein at least a first portion of the collector region resides between the base region and the buried region; and 
 a sinker region having the first conductivity type, wherein:
 the sinker region abuts the buried region; 
 at least a second portion of the collector region resides between the sinker region and the base region; and 
 the sinker region is electrically connected to the base region. 
 
 
     
     
       9. The bipolar transistor of  claim 8 , wherein the sinker region laterally surrounds the collector region. 
     
     
       10. The bipolar transistor of  claim 8 , wherein a dopant concentration of the collector region is less than a dopant concentration of the buried region. 
     
     
       11. The bipolar transistor of  claim 10 , wherein the dopant concentration of the collector region is less than a dopant concentration of the sinker region. 
     
     
       12. The bipolar transistor of  claim 8 , wherein the dopant concentration of the collector region is less than a dopant concentration of the sinker region. 
     
     
       13. The bipolar transistor of  claim 8 , further comprising an emitter region within the base region, the emitter region having the second conductivity type. 
     
     
       14. A semiconductor device comprising:
 a collector region of semiconductor material having a first conductivity type; 
 a sinker region of semiconductor material having a second conductivity type opposite the first conductivity type, wherein the sinker region laterally surrounds the collector region; 
 a base region of semiconductor material having the second conductivity type within the collector region, at least a first portion of the collector region resides between the sinker region and the base region; 
 an emitter region of semiconductor material within the base region, the emitter region having the first conductivity type; and 
 a buried region of semiconductor material having the second conductivity type, wherein:
 the collector region overlies the buried region; 
 the sinker region abuts the buried region; 
 the sinker region and the buried region are electrically connected to the base region; and 
 at least a second portion of the collector region resides between the base region and the buried region. 
 
 
     
     
       15. The semiconductor device of  claim 14 , wherein:
 a dopant concentration of the buried region is greater than a dopant concentration of the collector region; and 
 a dopant concentration of the sinker region is greater than the dopant concentration of the collector region. 
 
     
     
       16. The semiconductor device of  claim 15 , wherein a dopant concentration of the base region is greater than the dopant concentration of the collector region. 
     
     
       17. The semiconductor device of  claim 14 , wherein the second portion is beneath the emitter region.