Inventor · disambiguated record
Daniel J. Blomberg
Also filed as: BLOMBERG DANIEL J
40 granted patents·143 citations·filing 2009–2016
97Inventor score
Top patents by PatentIndex Score
40 records- 0195US9306060B1Semiconductor devices and related fabrication methodsYANG HONGNING·Filed 2014·Granted Apr 5, 2016·19 cites·20 claims
- 0293US8198703B2Zener diode with reduced substrate currentLIN XIN·Filed 2010·Granted Jun 12, 2012·19 cites·16 claims
- 0392US9590097B2Semiconductor devices and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 7, 2017·7 cites·20 claims
- 0490US9543454B1Diodes with multiple junctionsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jan 10, 2017·6 cites·15 claims
- 0588US9728600B2Partially biased isolation in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Aug 8, 2017·5 cites·19 claims
- 0688US9680011B2Self-adjusted isolation bias in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 13, 2017·5 cites·20 claims
- 0788US9231083B2High breakdown voltage LDMOS deviceYANG HONGNING·Filed 2012·Granted Jan 5, 2016·8 cites·14 claims
- 0887US8669640B2Bipolar transistorLIN XIN·Filed 2009·Granted Mar 11, 2014·12 cites·20 claims
- 0985US9601564B2Deep trench isolationFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 21, 2017·4 cites·20 claims
- 1085US9136323B2Drain-end drift diminution in semiconductor devicesYANG HONGNING·Filed 2014·Granted Sep 15, 2015·6 cites·20 claims
- 1185US8853780B2Semiconductor device with drain-end drift diminutionYANG HONGNING·Filed 2012·Granted Oct 7, 2014·7 cites·19 claims
- 1281US9601595B2High breakdown voltage LDMOS deviceYANG HONGNING·Filed 2015·Granted Mar 21, 2017·3 cites·15 claims
- 1381US9136327B1Deep trench isolation structures and systems and methods including the sameCHENG XU·Filed 2014·Granted Sep 15, 2015·4 cites·6 claims
- 1479US8847358B2Bipolar transistorLIN XIN·Filed 2012·Granted Sep 30, 2014·4 cites·13 claims
- 1579US7915704B2Schottky diodeFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Mar 29, 2011·8 cites·17 claims
- 1676US9343526B2Deep trench isolationFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted May 17, 2016·3 cites·7 claims
- 1774US8946041B2Methods for forming high gain tunable bipolar transistorsLIN XIN·Filed 2012·Granted Feb 3, 2015·3 cites·20 claims
- 1874US8384193B2Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gainFREESCALE SEMICONDUCTOR INC·Filed 2011·Granted Feb 26, 2013·3 cites·11 claims
- 1973US9117841B2Mergeable semiconductor device with improved reliabilityZHANG ZHIHONG·Filed 2013·Granted Aug 25, 2015·2 cites·20 claims
- 2073US8212292B2High gain tunable bipolar transistorLIN XIN·Filed 2009·Granted Jul 3, 2012·5 cites·16 claims
- 2172US7972913B2Method for forming a Schottky diodeFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jul 5, 2011·4 cites·20 claims
- 2270US8946862B2Methods for forming bipolar transistorsFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Feb 3, 2015·2 cites·20 claims
- 2362US9466687B2Methods for producing bipolar transistors with improved stabilityLIN XIN·Filed 2014·Granted Oct 11, 2016·1 cites·20 claims
- 2462US9059008B2Resurf high voltage diodeLIN XIN·Filed 2012·Granted Jun 16, 2015·1 cites·9 claims
- 2561US8648443B2Bipolar transistor with improved stabilityLIN XIN·Filed 2010·Granted Feb 11, 2014·1 cites·17 claims
- 2659US9054149B2Semiconductor device with diagonal conduction pathLIN XIN·Filed 2012·Granted Jun 9, 2015·1 cites·20 claims
- 2758US9184257B2Semiconductor device and related fabrication methodsLIN XIN·Filed 2014·Granted Nov 10, 2015·0 cites·19 claims
- 2855US9202887B2Methods for fabricating improved bipolar transistorsLIN XIN·Filed 2014·Granted Dec 1, 2015·0 cites·20 claims
- 2954US9917150B2Deep trench isolation structures and systems and methods including the sameNXP USA INC·Filed 2016·Granted Mar 13, 2018·0 cites·11 claims
- 3054US9130006B2Semiconductor device with buried conduction pathLIN XIN·Filed 2013·Granted Sep 8, 2015·0 cites·15 claims
- 3154US8946860B2Semiconductor device and related fabrication methodsLIN XIN·Filed 2013·Granted Feb 3, 2015·0 cites·17 claims
- 3252US9570548B2Deep trench isolation structures and systems and methods including the sameCHENG XU·Filed 2015·Granted Feb 14, 2017·0 cites·8 claims
- 3352US8546229B2Methods for fabricating bipolar transistors with improved gainLIN XIN·Filed 2013·Granted Oct 1, 2013·0 cites·20 claims
- 3451US9647082B2Diodes with multiple junctionsNXP USA INC·Filed 2016·Granted May 9, 2017·0 cites·15 claims
- 3551US9640635B2Reliability in mergeable semiconductor devicesZHANG ZHIHONG·Filed 2015·Granted May 2, 2017·0 cites·20 claims
- 3649US9893164B2Bipolar transistor device fabrication methodsLIN XIN·Filed 2015·Granted Feb 13, 2018·0 cites·20 claims
- 3748US9496333B2Resurf high voltage diodeLIN XIN·Filed 2015·Granted Nov 15, 2016·0 cites·15 claims
- 3846US8134219B2Schottky diodesLIN XIN·Filed 2011·Granted Mar 13, 2012·0 cites·19 claims
- 3943US9099489B2Bipolar transistor with high breakdown voltageLIN XIN·Filed 2012·Granted Aug 4, 2015·0 cites·20 claims
- 4037US10217860B2Partially biased isolation in semiconductor devicesNXP USA INC·Filed 2015·Granted Feb 26, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →