Inventor
GELATOS AVGERINOS V
US66 patents
⚠️ This page may combine multiple inventors who share the name “GELATOS AVGERINOS V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
39 patentsUS7745333B2Jun 29, 2010
Methods for depositing tungsten layers employing atomic layer deposition techniques
APPLIED MATERIALS INC47 citations97
US7429402B2Sep 30, 2008
Ruthenium as an underlayer for tungsten film deposition
APPLIED MATERIALS INC101 citations97
US7732327B2Jun 8, 2010
Vapor deposition of tungsten materials
APPLIED MATERIALS INC58 citations96
US7175713B2Feb 13, 2007
Apparatus for cyclical deposition of thin films
APPLIED MATERIALS INC110 citations96
US9685371B2Jun 20, 2017
Method of enabling seamless cobalt gap-fill
APPLIED MATERIALS INC35 citations94
US9528183B2Dec 27, 2016
Cobalt removal for chamber clean or pre-clean process
APPLIED MATERIALS INC25 citations93
US9601339B2Mar 21, 2017
Methods for depositing fluorine/carbon-free conformal tungsten
APPLIED MATERIALS INC13 citations92
US9230815B2Jan 5, 2016
Methods for depositing fluorine/carbon-free conformal tungsten
APPLIED MATERIALS INC17 citations92
US7691442B2Apr 6, 2010
Ruthenium or cobalt as an underlayer for tungsten film deposition
APPLIED MATERIALS INC39 citations92
US8617985B2Dec 31, 2013
High temperature tungsten metallization process
APPLIED MATERIALS INC7 citations84
US7521379B2Apr 21, 2009
Deposition and densification process for titanium nitride barrier layers
APPLIED MATERIALS INC11 citations84
US9966275B2May 8, 2018
Methods of treating nitride films
APPLIED MATERIALS INC6 citations81
US9735009B2Aug 15, 2017
Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
APPLIED MATERIALS INC5 citations81
US10043709B2Aug 7, 2018
Methods for thermally forming a selective cobalt layer
APPLIED MATERIALS INC5 citations73
US9842769B2Dec 12, 2017
Method of enabling seamless cobalt gap-fill
APPLIED MATERIALS INC3 citations73
US9230835B2Jan 5, 2016
Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices
APPLIED MATERIALS INC6 citations73
US11114320B2Sep 7, 2021
Processing system and method of forming a contact
APPLIED MATERIALS INC3 citations72
US10770300B2Sep 8, 2020
Remote hydrogen plasma titanium deposition to enhance selectivity and film uniformity
APPLIED MATERIALS INC2 citations72
US10418246B2Sep 17, 2019
Remote hydrogen plasma titanium deposition to enhance selectivity and film uniformity
APPLIED MATERIALS INC4 citations72
US10199230B2Feb 5, 2019
Methods for selective deposition of metal silicides via atomic layer deposition cycles
APPLIED MATERIALS INC3 citations72
US11387134B2Jul 12, 2022
Process kit for a substrate support
APPLIED MATERIALS INC2 citations70
US10163630B2Dec 25, 2018
Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high k at channel
APPLIED MATERIALS INC2 citations70
US7838441B2Nov 23, 2010
Deposition and densification process for titanium nitride barrier layers
APPLIED MATERIALS INC5 citations63
US12406849B2Sep 2, 2025
Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition
APPLIED MATERIALS INC0 citations62
US12281387B2Apr 22, 2025
Method of depositing metal films
APPLIED MATERIALS INC0 citations62
US11887855B2Jan 30, 2024
Methods for depositing fluorine/carbon-free conformal tungsten
APPLIED MATERIALS INC0 citations62
US11658014B2May 23, 2023
Apparatuses and methods of protecting nickel and nickel containing components with thin films
APPLIED MATERIALS INC0 citations62
US11430661B2Aug 30, 2022
Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition
APPLIED MATERIALS INC0 citations62
US10985023B2Apr 20, 2021
Methods for depositing fluorine/carbon-free conformal tungsten
APPLIED MATERIALS INC0 citations62
US12293902B2May 6, 2025
Process kit for a substrate support
APPLIED MATERIALS INC1 citations61
US11776806B2Oct 3, 2023
Multi-step pre-clean for selective metal gap fill
APPLIED MATERIALS INC0 citations61
US11380536B2Jul 5, 2022
Multi-step pre-clean for selective metal gap fill
APPLIED MATERIALS INC1 citations61
US9275865B2Mar 1, 2016
Plasma treatment of film for impurity removal
APPLIED MATERIALS INC2 citations61
USD1115720SMar 3, 2026
Lower edge ring of a process kit for semiconductor substrate processing
APPLIED MATERIALS INC0 citations60
USD1115719SMar 3, 2026
Lower edge ring of a process kit for semiconductor substrate processing
APPLIED MATERIALS INC0 citations60
US11355391B2Jun 7, 2022
Method for forming a metal gapfill
APPLIED MATERIALS INC0 citations60
US12571100B2Mar 10, 2026
Atomic layer deposition of molybdenum silicide thin films
APPLIED MATERIALS INC0 citations57
US12577655B2Mar 17, 2026
Methods for selective molybdenum deposition
APPLIED MATERIALS INC0 citations56
US12529147B2Jan 20, 2026
Low-k and tantalum nitride barrier recovery using a soak process
APPLIED MATERIALS INC0 citations56
MOTOROLA INC
5 patentsUS5391517AFeb 21, 1995
Process for forming copper interconnect structure
MOTOROLA INC300 citations99
US6174810B1Jan 16, 2001
Copper interconnect structure and method of formation
MOTOROLA INC235 citations98
US5324690AJun 28, 1994
Semiconductor device having a ternary boron nitride film and a method for forming the same
MOTOROLA INC82 citations96
US5064683ANov 12, 1991
Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop
MOTOROLA INC103 citations96
US5275973AJan 4, 1994
Method for forming metallization in an integrated circuit
MOTOROLA INC53 citations93
KHANDELWAL AMIT
2 patentsZOPE BHUSHAN N
1 patentAPPLIED MATERIAL INC
1 patentTZU GWO-CHUAN
1 patentTHAKUR RANDHIR P S
1 patentShowing the top 50 of 66 patents by PatentIndex Score.