Inventor · disambiguated record
Abhishek Dube
Also filed as: DUBE ABHISHEK
55 granted patents·36 pending applications·527 citations·filing 2006–2025
98Inventor score
Top patents by PatentIndex Score
91 records- 0198US9929055B2Method to grow thin epitaxial films at low temperatureAPPLIED MATERIALS INC·Filed 2016·Granted Mar 27, 2018·313 cites·20 claims
- 0297US9923081B1Selective process for source and drain formationAPPLIED MATERIALS INC·Filed 2017·Granted Mar 20, 2018·23 cites·20 claims
- 0396US9530661B2Method of modifying epitaxial growth shape on source drain area of transistorAPPLIED MATERIALS INC·Filed 2015·Granted Dec 27, 2016·14 cites·17 claims
- 0495US10789956B1Text-to-speech modelingCAPITAL ONE SERVICES LLC·Filed 2019·Granted Sep 29, 2020·22 cites·20 claims
- 0594US9768013B2Apparatus and method for selective depositionAPPLIED MATERIALS INC·Filed 2016·Granted Sep 19, 2017·10 cites·7 claims
- 0694US8492234B2Field effect transistor deviceCHAN KEVIN K·Filed 2010·Granted Jul 23, 2013·16 cites·12 claims
- 0792US8551845B2Structure and method for increasing strain in a deviceCHAN KEVIN K·Filed 2010·Granted Oct 8, 2013·12 cites·15 claims
- 0892US8361859B2Stressed transistor with improved metastabilityIBM·Filed 2010·Granted Jan 29, 2013·13 cites·15 claims
- 0991US11152479B2Semiconductor device, method of making a semiconductor device, and processing systemAPPLIED MATERIALS INC·Filed 2020·Granted Oct 19, 2021·3 cites·11 claims
- 1090US11195923B2Method of fabricating a semiconductor device having reduced contact resistanceAPPLIED MATERIALS INC·Filed 2019·Granted Dec 7, 2021·5 cites·13 claims
- 1190US9805942B2Method of modifying epitaxial growth shape on source drain area of transistorAPPLIED MATERIALS INC·Filed 2016·Granted Oct 31, 2017·5 cites·20 claims
- 1289US9530638B2Method to grow thin epitaxial films at low temperatureAPPLIED MATERIALS INC·Filed 2015·Granted Dec 27, 2016·5 cites·20 claims
- 1388US8889566B2Low cost flowable dielectric filmsAPPLIED MATERIALS INC·Filed 2012·Granted Nov 18, 2014·9 cites·20 claims
- 1487US8035141B2Bi-layer nFET embedded stressor element and integration to enhance drive currentIBM·Filed 2009·Granted Oct 11, 2011·15 cites·24 claims
- 1586US8299535B2Delta monolayer dopants epitaxy for embedded source/drain silicideCHAN KEVIN K·Filed 2010·Granted Oct 30, 2012·9 cites·20 claims
- 1685US8394712B2Cavity-free interface between extension regions and embedded silicon-carbon alloy source/drain regionsDUBE ABHISHEK·Filed 2011·Granted Mar 12, 2013·8 cites·25 claims
- 1784US9881790B2Method to enhance growth rate for selective epitaxial growthAPPLIED MATERIALS INC·Filed 2016·Granted Jan 30, 2018·3 cites·20 claims
- 1883US8173524B1Process for epitaxially growing epitaxial material regionsCHAKRAVARTI ASHIMA B·Filed 2011·Granted May 8, 2012·6 cites·24 claims
- 1982US8415252B2Selective copper encapsulation layer depositionCHENG TIEN-JEN·Filed 2010·Granted Apr 9, 2013·7 cites·20 claims
- 2081US10199215B2Apparatus and method for selective depositionAPPLIED MATERIALS INC·Filed 2017·Granted Feb 5, 2019·2 cites·13 claims
- 2181US2025283251A1Method for forming silicon-phosphorous materialsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2280US11282524B2Text-to-speech modelingCAPITAL ONE SERVICES LLC·Filed 2020·Granted Mar 22, 2022·1 cites·20 claims
- 2380US10276688B2Selective process for source and drain formationAPPLIED MATERIALS INC·Filed 2018·Granted Apr 30, 2019·2 cites·18 claims
- 2479US12338547B2Method for forming silicon-phosphorous materialsAPPLIED MATERIALS INC·Filed 2023·Granted Jun 24, 2025·0 cites·26 claims
- 2579US2025263864A1Method and apparatus for low temperature selective epitaxy in a deep trenchAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2678US8618617B2Field effect transistor deviceIBM·Filed 2013·Granted Dec 31, 2013·3 cites·9 claims
- 2777US12297559B2Method and apparatus for low temperature selective epitaxy in a deep trenchAPPLIED MATERIALS INC·Filed 2022·Granted May 13, 2025·0 cites·22 claims
- 2875US11309404B2Integrated CMOS source drain formation with advanced controlAPPLIED MATERIALS INC·Filed 2019·Granted Apr 19, 2022·1 cites·14 claims
- 2975US8338279B2Reduced pattern loading for doped epitaxial process and semiconductor structureDUBE ABHISHEK·Filed 2011·Granted Dec 25, 2012·3 cites·16 claims
- 3074US10128110B2Method to enhance growth rate for selective epitaxial growthAPPLIED MATERIALS INC·Filed 2018·Granted Nov 13, 2018·1 cites·19 claims
- 3173US2025275015A1Epitaxial deposition chamberAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 3271US8685845B2Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gasDUBE ABHISHEK·Filed 2010·Granted Apr 1, 2014·3 cites·15 claims
- 3371US7759213B2Pattern independent Si:C selective epitaxyIBM·Filed 2008·Granted Jul 20, 2010·3 cites·18 claims
- 3470US12324061B2Epitaxial deposition chamberAPPLIED MATERIALS INC·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 3570US2024153998A1Selective low temperature epitaxial deposition processAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3669US8637958B2Structure and method for forming isolation and buried plate for trench capacitorDUBE ABHISHEK·Filed 2012·Granted Jan 28, 2014·2 cites·11 claims
- 3769US2022199804A1Integrated CMOS Source Drain Formation With Advanced ControlAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3868US8298908B2Structure and method for forming isolation and buried plate for trench capacitorDUBE ABHISHEK·Filed 2010·Granted Oct 30, 2012·2 cites·14 claims
- 3967US2024018688A1Batch processing apparatus, systems, and related methods and structures for epitaxial deposition operationsAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 4066US9059285B2Structure and method for increasing strain in a deviceIBM·Filed 2013·Granted Jun 16, 2015·1 cites·10 claims
- 4166US8378424B2Semiconductor structure having test and transistor structuresIBM·Filed 2012·Granted Feb 19, 2013·1 cites·4 claims
- 4266US8236660B2Monolayer dopant embedded stressor for advanced CMOSCHAN KEVIN K·Filed 2010·Granted Aug 7, 2012·2 cites·5 claims
- 4365US12467144B2Methods of correlating zones of processing chambers, and related systems and methodsAPPLIED MATERIALS INC·Filed 2022·Granted Nov 11, 2025·0 cites·13 claims
- 4465US8927375B2Forming silicon-carbon embedded source/drain junctions with high substitutional carbon levelIBM·Filed 2012·Granted Jan 6, 2015·1 cites·20 claims
- 4564US11649560B2Method for forming silicon-phosphorous materialsAPPLIED MATERIALS INC·Filed 2019·Granted May 16, 2023·0 cites·18 claims
- 4662US11843033B2Selective low temperature epitaxial deposition processAPPLIED MATERIALS INC·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 4762US11456178B2Gate interface engineering with doped layerAPPLIED MATERIALS INC·Filed 2021·Granted Sep 27, 2022·0 cites·20 claims
- 4861US12353853B2Scalable and customizable computation using a modularized code architectureCAPITAL ONE SERVICES LLC·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 4960US12363971B2Graded superlattice structure for gate all around devicesAPPLIED MATERIALS INC·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 5060US2024347602A1Reduced strain heteroepitaxy assembly for three-dimensional device and method of fabrication thereforAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
Showing the top 50 of 91 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Abhishek Dube files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →