Inventor · disambiguated record
Adrian Powell
Also filed as: POWELL ADRIAN · POWELL ADRIAN R · POWELL ADRIAN ROGER
30 granted patents·2 pending applications·1,313 citations·filing 1993–2024
98Inventor score
Top patents by PatentIndex Score
32 records- 0198US8785946B2Low 1C screw dislocation 3 inch silicon carbide waferCREE INC·Filed 2013·Granted Jul 22, 2014·13 cites·21 claims
- 0297US8384090B2Low 1C screw dislocation 3 inch silicon carbide waferCREE INC·Filed 2007·Granted Feb 26, 2013·24 cites·16 claims
- 0396US5759898AProduction of substrate for tensilely strained semiconductorIBM·Filed 1996·Granted Jun 2, 1998·321 cites·16 claims
- 0496US5461243ASubstrate for tensilely strained semiconductorIBM·Filed 1993·Granted Oct 24, 1995·387 cites·6 claims
- 0595US9790619B2Method of producing high quality silicon carbide crystal in a seeded growth systemLEONARD ROBERT TYLER·Filed 2011·Granted Oct 17, 2017·25 cites·10 claims
- 0695US9200381B2Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interfaceLEONARD ROBERT TYLER·Filed 2005·Granted Dec 1, 2015·28 cites·40 claims
- 0795US7422634B2Three inch silicon carbide wafer with low warp, bow, and TTVCREE INC·Filed 2005·Granted Sep 9, 2008·59 cites·17 claims
- 0895US7351286B2One hundred millimeter single crystal silicon carbide waferCREE INC·Filed 2005·Granted Apr 1, 2008·20 cites·6 claims
- 0995US7316747B2Seeded single crystal silicon carbide growth and resulting crystalsCREE INC·Filed 2005·Granted Jan 8, 2008·34 cites·68 claims
- 1094US12054850B2Large diameter silicon carbide wafersWOLFSPEED INC·Filed 2020·Granted Aug 6, 2024·5 cites·33 claims
- 1194US8147991B2One hundred millimeter single crystal silicon carbide waferJENNY JASON RONALD·Filed 2010·Granted Apr 3, 2012·16 cites·25 claims
- 1294US7314520B2Low 1c screw dislocation 3 inch silicon carbide waferCREE INC·Filed 2004·Granted Jan 1, 2008·51 cites·35 claims
- 1394US7294324B2Low basal plane dislocation bulk grown SiC wafersCREE INC·Filed 2005·Granted Nov 13, 2007·26 cites·15 claims
- 1492US8980445B2One hundred millimeter SiC crystal grown on off-axis seedLEONARD ROBERT T·Filed 2006·Granted Mar 17, 2015·23 cites·11 claims
- 1590US5667586AMethod for forming a single crystal semiconductor on a substrateIBM·Filed 1996·Granted Sep 16, 1997·78 cites·11 claims
- 1689US7601441B2One hundred millimeter high purity semi-insulating single crystal silicon carbide waferCREE INC·Filed 2004·Granted Oct 13, 2009·27 cites·30 claims
- 1788US7314521B2Low micropipe 100 mm silicon carbide waferCREE INC·Filed 2004·Granted Jan 1, 2008·34 cites·35 claims
- 1887US12125701B2Large dimension silicon carbide single crystalline materials with reduced crystallographic stressWOLFSPEED INC·Filed 2020·Granted Oct 22, 2024·2 cites·10 claims
- 1987US9099377B2Micropipe-free silicon carbide and related method of manufactureBASCERI CEM·Filed 2007·Granted Aug 4, 2015·13 cites·31 claims
- 2087US8866159B1Low micropipe 100 mm silicon carbide waferCREE INC·Filed 2013·Granted Oct 21, 2014·6 cites·23 claims
- 2186US8410488B2Micropipe-free silicon carbide and related method of manufactureBASCERI CEM·Filed 2007·Granted Apr 2, 2013·11 cites·25 claims
- 2285US12473661B2Large diameter silicon carbide wafersWOLFSPEED INC·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 2385US7364617B2Seed and seedholder combinations for high quality growth of large silicon carbide single crystalsCREE INC·Filed 2007·Granted Apr 29, 2008·4 cites·16 claims
- 2483US8618552B2Low micropipe 100 mm silicon carbide waferPOWELL ADRIAN·Filed 2007·Granted Dec 31, 2013·10 cites·23 claims
- 2582US7300519B2Reduction of subsurface damage in the production of bulk SiC crystalsCREE INC·Filed 2004·Granted Nov 27, 2007·17 cites·28 claims
- 2680US7563321B2Process for producing high quality large size silicon carbide crystalsCREE INC·Filed 2004·Granted Jul 21, 2009·15 cites·23 claims
- 2779US5563428ALayered structure of a substrate, a dielectric layer and a single crystal layerFiled 1995·Granted Oct 8, 1996·40 cites·13 claims
- 2873US7192482B2Seed and seedholder combinations for high quality growth of large silicon carbide single crystalsCREE INC·Filed 2004·Granted Mar 20, 2007·24 cites·18 claims
- 2971US2025006491A1Large dimension silicon carbide single crystalline materials with reduced crystallographic stressWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 3063US10577720B2Stabilized, high-doped silicon carbideCREE INC·Filed 2017·Granted Mar 3, 2020·0 cites·4 claims
- 3158US11371163B2Stabilized, high-doped silicon carbideWOLFSPEED INC·Filed 2020·Granted Jun 28, 2022·0 cites·15 claims
- 3250US2013181231A1Micropipe-free silicon carbide and related method of manufactureCREE INC·Filed 2013·Application pending·0 cites
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