Inventor · disambiguated record
Adarsh Rajashekhar
Also filed as: RAJASHEKHAR Adarsh
66 granted patents·17 pending applications·679 citations·filing 2017–2024
98Inventor score
Top patents by PatentIndex Score
83 records- 0199US11482539B2Three-dimensional memory device including metal silicide source regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 25, 2022·11 cites·6 claims
- 0299US11177280B1Three-dimensional memory device including wrap around word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 16, 2021·13 cites·20 claims
- 0399US11127728B2Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 21, 2021·9 cites·20 claims
- 0499US10665581B1Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·86 cites·15 claims
- 0599US10290648B1Three-dimensional memory device containing air gap rails and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 14, 2019·71 cites·12 claims
- 0699US10283513B1Three-dimensional memory device with annular blocking dielectrics and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 7, 2019·82 cites·11 claims
- 0798US11239253B2Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
- 0898US11201139B2Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 14, 2021·7 cites·20 claims
- 0998US11145628B1Semiconductor structure containing reentrant shaped bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 12, 2021·6 cites·20 claims
- 1098US10804291B1Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·22 cites·20 claims
- 1198US10651196B1Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 12, 2020·33 cites·13 claims
- 1298US10381559B1Three-dimensional phase change memory array including discrete middle electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·46 cites·22 claims
- 1398US10276583B2Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 30, 2019·51 cites·13 claims
- 1497US11527500B2Semiconductor structure containing multilayer bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 13, 2022·4 cites·20 claims
- 1597US11049880B2Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 29, 2021·15 cites·6 claims
- 1697US11024648B2Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 1, 2021·6 cites·18 claims
- 1797US10937809B1Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 2, 2021·25 cites·13 claims
- 1897US10529620B2Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 7, 2020·23 cites·10 claims
- 1997US10381409B1Three-dimensional phase change memory array including discrete middle electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·35 cites·20 claims
- 2097US10290652B1Three-dimensional memory device with graded word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·22 cites·20 claims
- 2196US11121140B2Ferroelectric tunnel junction memory device with integrated ovonic threshold switchesSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 14, 2021·4 cites·20 claims
- 2296US10790300B2Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 29, 2020·12 cites·10 claims
- 2395US10868025B2Three-dimensional memory device including replacement crystalline channels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 15, 2020·13 cites·13 claims
- 2495US10756110B1Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 25, 2020·14 cites·15 claims
- 2595US10615123B2Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 7, 2020·11 cites·10 claims
- 2694US11309301B2Stacked die assembly including double-sided inter-die bonding connections and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 19, 2022·3 cites·20 claims
- 2794US11302716B2Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 12, 2022·3 cites·13 claims
- 2894US11282848B2Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 22, 2022·3 cites·20 claims
- 2994US11239254B2Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 1, 2022·3 cites·20 claims
- 3094US10797061B2Three-dimensional memory device having stressed vertical semiconductor channels and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 6, 2020·10 cites·8 claims
- 3192US11948902B2Bonded assembly including an airgap containing bonding-level dielectric layer and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 2, 2024·2 cites·20 claims
- 3291US11424265B2Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 23, 2022·2 cites·16 claims
- 3390US11996462B2Ferroelectric field effect transistors having enhanced memory window and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 28, 2024·2 cites·5 claims
- 3490US11569260B2Three-dimensional memory device including discrete memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 31, 2023·2 cites·7 claims
- 3589US11631695B2Three-dimensional memory device containing composite word lines containing metal and silicide and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 18, 2023·2 cites·4 claims
- 3689US11521984B2Three-dimensional memory device containing low resistance source-level contact and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 6, 2022·2 cites·10 claims
- 3789US10797060B2Three-dimensional memory device having stressed vertical semiconductor channels and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 6, 2020·5 cites·11 claims
- 3887US12317502B2Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted May 27, 2025·1 cites·1 claims
- 3986US11217532B2Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 4, 2022·4 cites·18 claims
- 4085US11114534B2Three-dimensional nor array including vertical word lines and discrete channels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 7, 2021·3 cites·20 claims
- 4183US11309332B2Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 19, 2022·3 cites·11 claims
- 4282US11437270B2Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 6, 2022·2 cites·20 claims
- 4375US2025380423A1Three-dimensional memory device with laterally integrated access transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 4473US2025380417A1Three-dimensional memory device with laterally integrated access transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 4568US2025380426A1Three-dimensional memory device with laterally integrated access transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 4665US2024276725A1Three-dimensional memory device with integrated contact and support structure and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 4764US12484222B2Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory openingSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 4863US12457738B2Three-dimensional memory device containing engineered charge storage elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Oct 28, 2025·0 cites·18 claims
- 4963US12289889B2Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 5063US2025380424A1Three-dimensional memory device with laterally integrated access transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
Showing the top 50 of 83 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →