Inventor · disambiguated record
Aelan Mosden
Also filed as: MOSDEN AELAN
27 granted patents·8 pending applications·134 citations·filing 2002–2024
95Inventor score
Top patents by PatentIndex Score
35 records- 0195US11424120B2Plasma etching techniquesTOKYO ELECTRON LTD·Filed 2021·Granted Aug 23, 2022·7 cites·20 claims
- 0294US11538690B2Plasma etching techniquesTOKYO ELECTRON LTD·Filed 2021·Granted Dec 27, 2022·5 cites·24 claims
- 0390US8673725B2Multilayer sidewall spacer for seam protection of a patterned structureO'MEARA DAVID L·Filed 2010·Granted Mar 18, 2014·15 cites·12 claims
- 0489US9984890B2Isotropic silicon and silicon-germanium etching with tunable selectivityTOKYO ELECTRON LTD·Filed 2017·Granted May 29, 2018·6 cites·20 claims
- 0588US11837467B2Plasma etching techniquesTOKYO ELECTRON LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
- 0688US7226868B2Method of etching high aspect ratio featuresTOKYO ELECTRON LTD·Filed 2002·Granted Jun 5, 2007·45 cites·43 claims
- 0785US12002683B2Lateral etching of siliconTOKYO ELECTRON LTD·Filed 2022·Granted Jun 4, 2024·1 cites·20 claims
- 0885US10573564B2Method for fabricating NFET and PFET nanowire devicesTOKYO ELECTRON LTD·Filed 2018·Granted Feb 25, 2020·5 cites·20 claims
- 0984US9748110B2Method and system for selective spacer etch for multi-patterning schemesTOKYO ELECTRON LTD·Filed 2016·Granted Aug 29, 2017·4 cites·10 claims
- 1082US11482423B2Plasma etching techniquesTOKYO ELECTRON LTD·Filed 2021·Granted Oct 25, 2022·1 cites·20 claims
- 1182US8809169B2Multi-layer pattern for alternate ALD processesO'MEARA DAVID L·Filed 2011·Granted Aug 19, 2014·6 cites·19 claims
- 1280US10923356B2Gas phase etch with controllable etch selectivity of silicon-germanium alloysTOKYO ELECTRON LTD·Filed 2019·Granted Feb 16, 2021·2 cites·19 claims
- 1377US10971372B2Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masksTOKYO ELECTRON LTD·Filed 2016·Granted Apr 6, 2021·2 cites·17 claims
- 1475US7097779B2Processing system and method for chemically treating a TERA layerTOKYO ELECTRON LTD·Filed 2004·Granted Aug 29, 2006·14 cites·21 claims
- 1570US7959970B2System and method of removing chamber residues from a plasma processing system in a dry cleaning processTOKYO ELECTRON LTD·Filed 2004·Granted Jun 14, 2011·12 cites·23 claims
- 1666US10290553B2System and method of determining process completion of post heat treatment of a dry etch processTOKYO ELECTRON LTD·Filed 2017·Granted May 14, 2019·1 cites·18 claims
- 1761US11538691B2Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masksTOKYO ELECTRON LTD·Filed 2021·Granted Dec 27, 2022·0 cites·16 claims
- 1858US11380554B2Gas phase etching system and methodTOKYO ELECTRON LTD·Filed 2020·Granted Jul 5, 2022·0 cites·16 claims
- 1958US8664102B2Dual sidewall spacer for seam protection of a patterned structureO'MEARA DAVID L·Filed 2010·Granted Mar 4, 2014·1 cites·13 claims
- 2057US7291446B2Method and system for treating a hard mask to improve etch characteristicsTOKYO ELECTRON LTD·Filed 2004·Granted Nov 6, 2007·6 cites·17 claims
- 2155US12512327B2Surface modification to achieve selective isotropic etchTOKYO ELECTRON LTD·Filed 2022·Granted Dec 30, 2025·0 cites·19 claims
- 2255US12272558B2Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modificationTOKYO ELECTRON LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 2355US2024379372A1Method for ion-assisted self-limited conformal etchTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2453US2024234158A1Method for Etching Features in a Layer in a SubstrateTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2552US11322350B2Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectricsTOKYO ELECTRON LTD·Filed 2020·Granted May 3, 2022·0 cites·21 claims
- 2651US11715643B2Gas phase etch with controllable etch selectivity of metalsTOKYO ELECTRON LTD·Filed 2020·Granted Aug 1, 2023·0 cites·16 claims
- 2751US11189499B2Atomic layer etch (ALE) of tungsten or other metal layersTOKYO ELECTRON LTD·Filed 2020·Granted Nov 30, 2021·0 cites·23 claims
- 2849US2006254716A1Processing system and method for chemically treating a tera layerTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 2948US10580660B2Gas phase etching system and methodTOKYO ELECTRON LTD·Filed 2016·Granted Mar 3, 2020·0 cites·15 claims
- 3047US2023420267A1Oxygen-free etching of non-volatile metalsTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 3142US10600687B2Process integration techniques using a carbon layer to form self-aligned structuresTOKYO ELECTRON LTD·Filed 2017·Granted Mar 24, 2020·0 cites·20 claims
- 3239US2004256353A1Method and system for deep trench silicon etchTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 3337US2007238301A1Batch processing system and method for performing chemical oxide removalCABRAL STEPHEN H·Filed 2006·Application pending·0 cites
- 3437US2005205209A1Replacing chamber components in a vacuum environmentMOSDEN AELAN·Filed 2004·Application pending·0 cites
- 3536US2017207103A1Gas phase etch of amorphous and poly-crystalline silicon from high aspect ratio features with high selectivity towards various filmsTOKYO ELECTRON LTD·Filed 2017·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Aelan Mosden files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →