Inventor · disambiguated record
Ajey Poovannummoottil Jacob
Also filed as: JACOB AJEY · JACOB AJEY P · JACOB AJEY POOVANNUMMOOTTIL
227 granted patents·37 pending applications·1,522 citations·filing 2009–2025
99Inventor score
Files withGLOBALFOUNDRIES INC176GLOBALFOUNDRIES US INC58UNIV SOUTHERN CALIFORNIA17IBM3ST MICROELECTRONICS INC3
Top patents by PatentIndex Score
264 records- 0198US11125944B2Polarizer with multiple evanescently coupled waveguidesGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 21, 2021·10 cites·20 claims
- 0298US11069402B1Integrated pixel and three-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computingGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 20, 2021·10 cites·20 claims
- 0398US11029465B1Micro-ring modulatorGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 8, 2021·21 cites·15 claims
- 0498US10996398B1Switchable polarization splittersGLOBALFOUNDRIES US INC·Filed 2019·Granted May 4, 2021·18 cites·20 claims
- 0598US10955614B1Optical fiber coupler structure having manufacturing variation-sensitive transmission blocking regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 23, 2021·10 cites·20 claims
- 0698US10910503B1Semiconductor detectors with butt-end coupled waveguide and method of forming the sameGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 2, 2021·18 cites·20 claims
- 0798US10429582B1Waveguide-to-waveguide couplers with multiple tapersGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·59 cites·19 claims
- 0898US9972537B2Methods of forming graphene contacts on source/drain regions of FinFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted May 15, 2018·21 cites·24 claims
- 0998US9831131B1Method for forming nanowires including multiple integrated devices with alternate channel materialsGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 28, 2017·27 cites·12 claims
- 1098US9349658B1Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of materialGLOBALFOUNDRIES INC·Filed 2015·Granted May 24, 2016·31 cites·16 claims
- 1198US9343300B1Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel regionGLOBALFOUNDRIES INC·Filed 2015·Granted May 17, 2016·45 cites·18 claims
- 1298US8716156B1Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation processGLOBALFOUNDRIES INC·Filed 2013·Granted May 6, 2014·60 cites·39 claims
- 1397US11467343B2Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segmentsGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 11, 2022·4 cites·13 claims
- 1497US11105978B2Polarizers including stacked elementsGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 31, 2021·7 cites·20 claims
- 1597US10989876B1Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segmentsGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 27, 2021·19 cites·20 claims
- 1697US10816726B1Edge couplers for photonics applicationsGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·43 cites·20 claims
- 1797US10684530B1Electro-optic modulators with layered arrangementsGLOBALFOUNDRIES INC·Filed 2019·Granted Jun 16, 2020·13 cites·20 claims
- 1897US10641956B1Polarizers and polarization splitters phase-matched with a back-end-of-line layerGLOBALFOUNDRIES INC·Filed 2019·Granted May 5, 2020·22 cites·16 claims
- 1997US10585245B1Multiple-layer arrangements using tunable materials to provide switchable optical componentsGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·13 cites·20 claims
- 2097US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 2197US9318342B2Methods of removing fins for finfet semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 19, 2016·16 cites·12 claims
- 2297US9165837B1Method to form defect free replacement fins by H2 annealGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 20, 2015·35 cites·20 claims
- 2397US9147748B1Methods of forming replacement spacer structures on semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·36 cites·14 claims
- 2496US11495700B2Photodetectors and semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 8, 2022·4 cites·20 claims
- 2596US11322636B2PhotodiodeGLOBALFOUNDRIES US INC·Filed 2020·Granted May 3, 2022·4 cites·20 claims
- 2696US11256030B1Optical power splitters including a non-linear waveguide taperGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 22, 2022·8 cites·20 claims
- 2796US10649245B1Electro-optic modulators with stacked metal, dielectric, and active layersGLOBALFOUNDRIES INC·Filed 2019·Granted May 12, 2020·9 cites·20 claims
- 2896US10649140B1Back-end-of-line blocking structures arranged over a waveguide coreGLOBALFOUNDRIES INC·Filed 2019·Granted May 12, 2020·17 cites·19 claims
- 2996US10444433B1Waveguides including a patterned dielectric layerGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 15, 2019·22 cites·17 claims
- 3096US10436982B1Waveguide bends with field confinementGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 8, 2019·18 cites·20 claims
- 3196US10429581B1Polarization splitters based on stacked waveguidesGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·20 cites·20 claims
- 3296US10185092B1Hybrid grating couplers that overlap via an interconnect structure having a metallization layerGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 22, 2019·19 cites·20 claims
- 3396US9864136B1Non-planar monolithic hybrid optoelectronic structures and methodsGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 9, 2018·16 cites·19 claims
- 3496US9362405B1Channel cladding last process flow for forming a channel region on a FinFET deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 7, 2016·20 cites·19 claims
- 3596US9269628B1Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 23, 2016·26 cites·27 claims
- 3696US9147730B2Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting processGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·25 cites·20 claims
- 3796US9023705B1Methods of forming stressed multilayer FinFET devices with alternative channel materialsGLOBALFOUNDRIES INC·Filed 2013·Granted May 5, 2015·27 cites·10 claims
- 3895US11177404B2Fin-based photodetector structureGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 16, 2021·3 cites·20 claims
- 3995US10795083B1Heterogeneous directional couplers for photonics chipsGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 6, 2020·13 cites·20 claims
- 4095US9263587B1Fin device with blocking layer in channel regionGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 16, 2016·16 cites·20 claims
- 4195US9093496B2Process for faciltiating fin isolation schemesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 28, 2015·19 cites·21 claims
- 4294US10816727B1Multimode waveguide bends with features to reduce bending lossGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·9 cites·14 claims
- 4394US10795082B1Bragg gratings with airgap claddingGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 6, 2020·12 cites·20 claims
- 4494US9799767B2Methods of forming PMOS and NMOS FinFET devices on CMOS based integrated circuit productsGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 24, 2017·12 cites·20 claims
- 4594US9455199B1Methods of forming strained and relaxed germanium fins for PMOS and NMOS finFET devices, respectivelyGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 27, 2016·11 cites·19 claims
- 4694US9318552B2Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 19, 2016·15 cites·21 claims
- 4794US9287130B1Method for single fin cuts using selective ion implantsGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·12 cites·23 claims
- 4894US9147616B1Methods of forming isolated fins for a FinFET semiconductor device with alternative channel materialsGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·16 cites·14 claims
- 4994US9123627B1Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 1, 2015·17 cites·25 claims
- 5094US8673718B2Methods of forming FinFET devices with alternative channel materialsMASZARA WITOLD P·Filed 2012·Granted Mar 18, 2014·27 cites·16 claims
Showing the top 50 of 264 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Ajey Poovannummoottil Jacob files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →