Inventor · disambiguated record
Ajith Varghese
Also filed as: VARGHESE AJITH
15 granted patents·7 pending applications·93 citations·filing 2003–2014
91Inventor score
Files withTEXAS INSTRUMENTS INC17NIIMI HIROAKI2CHEN YUANNING1EKBOTE SHASHANK SURESHCHANDRA1VARGHESE AJITH1
Top patents by PatentIndex Score
22 records- 0193US7838370B2Highly selective liners for semiconductor fabricationTEXAS INSTRUMENTS INC·Filed 2007·Granted Nov 23, 2010·42 cites·20 claims
- 0284US7396728B2Methods of improving drive currents by employing strain inducing STI linersTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 8, 2008·18 cites·22 claims
- 0377US7435651B2Method to obtain uniform nitrogen profile in gate dielectricsTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 14, 2008·6 cites·18 claims
- 0474US7384861B2Strain modulation employing process techniques for CMOS technologiesTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 10, 2008·5 cites·9 claims
- 0569US7723173B2Low temperature polysilicon oxide process for high-K dielectric/metal gate stackTEXAS INSTRUMENTS INC·Filed 2009·Granted May 25, 2010·2 cites·20 claims
- 0668US8119470B2Mitigation of gate to contact capacitance in CMOS flowEKBOTE SHASHANK SURESHCHANDRA·Filed 2007·Granted Feb 21, 2012·6 cites·10 claims
- 0764US7696021B2Semiconductor device manufactured using a non-contact implant metrologyTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 13, 2010·2 cites·15 claims
- 0863US7514308B2CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layersTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 7, 2009·2 cites·8 claims
- 0958US9054056B2Transistor performance using a two-step damage annealTEXAS INSTRUMENTS INC·Filed 2014·Granted Jun 9, 2015·0 cites·3 claims
- 1058US9029251B2Transistor performance using a two-step damage annealTEXAS INSTRUMENTS INC·Filed 2014·Granted May 12, 2015·0 cites·3 claims
- 1157US7227201B2CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layersTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 5, 2007·6 cites·7 claims
- 1254US8828855B2Transistor performance using a two-step damage annealNIIMI HIROAKI·Filed 2007·Granted Sep 9, 2014·0 cites·5 claims
- 1351US2008246099A1Low temperature poly oxide processes for high-k/metal gate flowVARGHESE AJITH·Filed 2007·Application pending·0 cites
- 1449US7855111B2Border region defect reduction in hybrid orientation technology (HOT) direct silicon bonded (DSB) substratesTEXAS INSTRUMENTS INC·Filed 2009·Granted Dec 21, 2010·0 cites·19 claims
- 1549US7682988B2Thermal treatment of nitrided oxide to improve negative bias thermal instabilityTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 23, 2010·2 cites·21 claims
- 1649US6924239B2Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidationTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 2, 2005·2 cites·21 claims
- 1749US2008315324A1Method to obtain uniform nitrogen profile in gate dielectricsTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1844US2009045472A1Methodology for Reducing Post Burn-In Vmin DriftTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 1944US2008268603A1Transistor performance using a two-step damage annealNIIMI HIROAKI·Filed 2007·Application pending·0 cites
- 2042US2008076076A1Rework methodology that preserves gate performanceTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 2138US2004262701A1Nitridation process for independent control of device gate leakage and drive currentTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
- 2238US2008251864A1Stacked poly structure to reduce the poly particle count in advanced cmos technologyCHEN YUANNING·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →