Method to obtain uniform nitrogen profile in gate dielectrics

Abstract

The present invention, in one aspect, provides a method of manufacturing a microelectronics device 100 that includes depositing a first gate dielectric layer 160 over a substrate 115, subjecting the first gate dielectric layer 160 to a first nitridation process, forming a second gate dielectric layer 165 over the substrate 115 and having a thickness less than a thickness of the first gate dielectric layer 160, and subjecting the first and second gate dielectric layers 160, 165 to a second nitridation process, wherein the first and second nitridation processes are different. The present invention also provides a microelectronics device 100 fabricated in accordance with the method.

1 . A microelectronics device, comprising:
 a first transistor having a first gate dielectric layer located in an input/out region of the microelectronics device, the first dielectric layer having a thickness of about 2 nm or greater and further having a substantially uniform nitrogen profile such that a nitrogen profile uniformity of the first gate dielectric layer is less than about 50% throughout a substantial portion of the thickness of the first gate dielectric layer;   a second transistor having a second gate dielectric layer located in a core region of the microelectronics device, the second gate dielectric layer having a thickness that is less than the thickness of the first gate dielectric layer and is less than about 2 nm.   
   
   
       2 . The microelectronics device as recited in  claim 1 , wherein the second gate dielectric layer has a substantially uniform nitrogen profile such a nitrogen profile uniformity of the second gate dielectric layer is less than about 7% throughout a substantial portion of the thickness of the second gate dielectric layer. 
   
   
       3 . The microelectronics device as recited in  claim 1 , wherein an operating voltage of the first transistor ranges from about 1.8 volts to about 3.3 volts. 
   
   
       4 . The microelectronics device as recited in  claim 1 , wherein an operating voltage of the second transistor ranges from about 1.1 volts to about 1.3 volts.