Inventor · disambiguated record
Akira Hokazono
Also filed as: HOKAZONO AKIRA
37 granted patents·18 pending applications·734 citations·filing 1997–2019
98Inventor score
Top patents by PatentIndex Score
55 records- 0198US7888747B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2009·Granted Feb 15, 2011·134 cites·20 claims
- 0298US7750381B2Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2008·Granted Jul 6, 2010·100 cites·6 claims
- 0397US8134159B2Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the sameHOKAZONO AKIRA·Filed 2009·Granted Mar 13, 2012·125 cites·20 claims
- 0496US8610201B1FinFET comprising a punch-through stopperHOKAZONO AKIRA·Filed 2012·Granted Dec 17, 2013·46 cites·15 claims
- 0596US7554165B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Jun 30, 2009·45 cites·5 claims
- 0693US7129550B2Fin-shaped semiconductor deviceTOSHIBA KK·Filed 2004·Granted Oct 31, 2006·56 cites·20 claims
- 0789US8729607B2Needle-shaped profile finFET deviceITOKAWA HIROSHI·Filed 2012·Granted May 20, 2014·17 cites·18 claims
- 0885US9246005B2Stressed channel bulk fin field effect transistorIBM·Filed 2014·Granted Jan 26, 2016·5 cites·13 claims
- 0983US6956276B2Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating filmTOSHIBA KK·Filed 2003·Granted Oct 18, 2005·24 cites·25 claims
- 1081US6608354B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Aug 19, 2003·26 cites·13 claims
- 1180US6573583B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Jun 3, 2003·21 cites·14 claims
- 1277US6881633B2Method of manufacturing a semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating filmTOSHIBA KK·Filed 2004·Granted Apr 19, 2005·17 cites·2 claims
- 1376US6436776B2Process for fabricating a aligned LDD transistorTOSHIBA KK·Filed 2001·Granted Aug 20, 2002·20 cites·16 claims
- 1475US8841191B2Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2013·Granted Sep 23, 2014·4 cites·20 claims
- 1575US7985985B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2008·Granted Jul 26, 2011·4 cites·18 claims
- 1675US6545317B2Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereofTOSHIBA KK·Filed 2001·Granted Apr 8, 2003·17 cites·8 claims
- 1767US8872271B2Pass gate, semiconductor memory, and semiconductor deviceTOSHIBA KK·Filed 2013·Granted Oct 28, 2014·2 cites·19 claims
- 1867US7061054B2Semiconductor device and semiconductor device manufacturing methodTOSHIBA KK·Filed 2003·Granted Jun 13, 2006·16 cites·29 claims
- 1966US7427796B2Semiconductor device and method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2005·Granted Sep 23, 2008·3 cites·11 claims
- 2065US9437735B1Tunnel FETTOSHIBA KK·Filed 2015·Granted Sep 6, 2016·1 cites·5 claims
- 2163US8049280B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2009·Granted Nov 1, 2011·2 cites·14 claims
- 2261US9324798B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2013·Granted Apr 26, 2016·1 cites·10 claims
- 2361US8841728B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Sep 23, 2014·1 cites·14 claims
- 2461US7141467B2Semiconductor device having metal silicide films formed on source and drain regions and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Nov 28, 2006·9 cites·15 claims
- 2561US6025211AHydrogen-terminated diamond MISFET and its manufacturing methodTOKYO GAS CO LTD·Filed 1998·Granted Feb 15, 2000·17 cites·24 claims
- 2659US9224850B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Dec 29, 2015·1 cites·10 claims
- 2754US6864544B2Semiconductor device having active regions connected together by interconnect layer and method of manufacture thereofTOSHIBA KK·Filed 2002·Granted Mar 8, 2005·5 cites·34 claims
- 2852US6875665B2Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2003·Granted Apr 5, 2005·4 cites·4 claims
- 2951US7714364B2Semiconductor device comprising gate electrode having arsenic and phosphorusTOSHIBA KK·Filed 2006·Granted May 11, 2010·0 cites·22 claims
- 3050US9484262B2Stressed channel bulk fin field effect transistorIBM·Filed 2015·Granted Nov 1, 2016·0 cites·13 claims
- 3149US8004050B2Semiconductor device comprising gate electrode having arsenic and phosphorousTOSHIBA KK·Filed 2010·Granted Aug 23, 2011·0 cites·19 claims
- 3249US2006166456A1Semiconductor device and manufacturing method thereofFUJIWARA MAKOTO·Filed 2006·Application pending·0 cites
- 3349US2005167765A1Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film and method of manufacturing sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 3448US6927459B2Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Aug 9, 2005·3 cites·20 claims
- 3545US7045409B2Semiconductor device having active regions connected together by interconnect layer and method of manufacture thereofTOSHIBA KK·Filed 2004·Granted May 16, 2006·1 cites·22 claims
- 3644US5854496AHydrogen-terminated diamond misfet and its manufacturing methodTOKYO GAS CO LTD·Filed 1997·Granted Dec 29, 1998·7 cites·26 claims
- 3744US2015243769A1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2014·Application pending·0 cites
- 3844US2009039440A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2008·Application pending·0 cites
- 3943US9324714B2Semiconductor deviceTOSHIBA KK·Filed 2014·Granted Apr 26, 2016·0 cites·18 claims
- 4043US2015371992A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2014·Application pending·0 cites
- 4143US2009243002A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2009·Application pending·0 cites
- 4241US2008054364A1Semiconductor device having cmos deviceHOKAZONO AKIRA·Filed 2007·Application pending·0 cites
- 4340US2014175553A1Mos semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Application pending·0 cites
- 4439US10734449B2Storage deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Aug 4, 2020·0 cites·11 claims
- 4539US10079268B2Memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Sep 18, 2018·0 cites·14 claims
- 4639US2013119506A1Formation of sti trenches for limiting pn-junction leakageHOKAZONO AKIRA·Filed 2011·Application pending·0 cites
- 4739US2006063314A1Field effect transistor and method of manufacturing the sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 4838US2010224936A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2010·Application pending·0 cites
- 4938US2013193517A1Semiconductor device with lateral and vertical channel confinement and method of fabricating the sameHOKAZONO AKIRA·Filed 2012·Application pending·0 cites
- 5038US2020091236A1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →