Inventor · disambiguated record
Akito Kuramata
Also filed as: KURAMATA AKITO
18 granted patents·3 pending applications·390 citations·filing 1994–2020
94Inventor score
Top patents by PatentIndex Score
21 records- 0193US9412882B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2015·Granted Aug 9, 2016·10 cites·8 claims
- 0292US6555403B1Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the sameFUJITSU LTD·Filed 1998·Granted Apr 29, 2003·134 cites·58 claims
- 0391US6606335B1Semiconductor laser, semiconductor device, and their manufacture methodsFUJITSU LTD·Filed 1999·Granted Aug 12, 2003·102 cites·14 claims
- 0490US9595586B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2016·Granted Mar 14, 2017·5 cites·8 claims
- 0590US9171967B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2012·Granted Oct 27, 2015·9 cites·8 claims
- 0686US10600874B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2017·Granted Mar 24, 2020·3 cites·13 claims
- 0784US10230007B2Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Mar 12, 2019·4 cites·7 claims
- 0880US6661822B1Semiconductor light emitting device and method of manufacturing the sameFUJITSU LTD·Filed 2000·Granted Dec 9, 2003·18 cites·13 claims
- 0978US5408487ASemiconductor laserFUJITSU LTD·Filed 1994·Granted Apr 18, 1995·38 cites·34 claims
- 1070US11264466B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2020·Granted Mar 1, 2022·0 cites·12 claims
- 1169US5850410ASemiconductor laser and method for fabricating the sameFUJITSU LTD·Filed 1996·Granted Dec 15, 1998·34 cites·15 claims
- 1260US7507600B2Semiconductor photodetecting device and method for fabricating the sameFUJITSU LTD·Filed 2005·Granted Mar 24, 2009·2 cites·10 claims
- 1358US6943422B2Semiconductor photodetecting device and method for fabricating the sameFUJITSU LTD·Filed 2003·Granted Sep 13, 2005·5 cites·15 claims
- 1449US6984840B2Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V elementFUJITSU LTD·Filed 1999·Granted Jan 10, 2006·17 cites·24 claims
- 1549US5379720AProcess for growing semiconductor crystalFUJITSU LTD·Filed 1994·Granted Jan 10, 1995·9 cites·6 claims
- 1645US11264241B2Semiconductor substrate, semiconductor element and method for producing semiconductor substrateTAMURA SEISAKUSHO KK·Filed 2018·Granted Mar 1, 2022·0 cites·7 claims
- 1745US2008131987A1Method for fabricating light-emitting deviceEUDYNA DEVICES INC·Filed 2007·Application pending·0 cites
- 1839US2015364646A1Crystal layered structure and light emitting elementTAMURA SEISAKUSHO KK·Filed 2013·Application pending·0 cites
- 1937US6990261B2Optical circuit device and method for fabricating the sameFUJITSU LTD·Filed 2002·Granted Jan 24, 2006·0 cites·17 claims
- 2034US9153648B2Semiconductor stacked body, method for manufacturing same, and semiconductor elementSATO SHINKURO·Filed 2012·Granted Oct 6, 2015·0 cites·18 claims
- 2133US2018033907A1Nitride semiconductor template and method for manufacturing sameMORISHIMA YOSHIKATSU·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →