Inventor · disambiguated record
Akio Nishida
Also filed as: NISHIDA AKIO
109 granted patents·12 pending applications·2,380 citations·filing 1985–2024
99Inventor score
Files withSANDISK TECHNOLOGIES LLC39RENESAS TECH CORP21MURATA MANUFACTURING CO15RENESAS ELECTRONICS CORP13HITACHI LTD9
Top patents by PatentIndex Score
121 records- 0199US10903164B2Bonded assembly including a semiconductor-on-insulator die and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 26, 2021·8 cites·5 claims
- 0299US10510738B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 17, 2019·104 cites·20 claims
- 0399US10354980B1Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·168 cites·16 claims
- 0499US10354987B1Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·139 cites·20 claims
- 0599US10283493B1Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 7, 2019·288 cites·18 claims
- 0698US11791327B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 17, 2023·4 cites·14 claims
- 0798US11201107B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 14, 2021·34 cites·20 claims
- 0898US11195781B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 7, 2021·22 cites·20 claims
- 0998US10833100B2Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 10, 2020·5 cites·20 claims
- 1098US10797062B1Bonded die assembly using a face-to-back oxide bonding and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 6, 2020·22 cites·11 claims
- 1198US10714497B1Three-dimensional device with bonded structures including a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 14, 2020·39 cites·21 claims
- 1298US10665607B1Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·40 cites·20 claims
- 1398US10516025B1Three-dimensional NAND memory containing dual protrusion charge trapping regions and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 24, 2019·35 cites·7 claims
- 1498US7067864B2SRAM having an improved capacitorRENESAS TECH CORP·Filed 2001·Granted Jun 27, 2006·146 cites·40 claims
- 1597US11393836B2Three-dimensional memory device with separated source-side lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 19, 2022·7 cites·20 claims
- 1697US11011506B2Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 18, 2021·9 cites·12 claims
- 1797US10804202B2Bonded assembly including a semiconductor-on-insulator die and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 13, 2020·19 cites·15 claims
- 1897US10741576B2Three-dimensional memory device containing drain-select-level air gap and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 11, 2020·18 cites·10 claims
- 1997US10665580B1Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·104 cites·20 claims
- 2097US10355100B1Field effect transistors having different stress control liners and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·39 cites·9 claims
- 2197US9443910B1Silicided bit line for reversible-resistivity memorySANDISK 3D LLC·Filed 2015·Granted Sep 13, 2016·28 cites·25 claims
- 2296US11069703B2Three-dimensional device with bonded structures including a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 20, 2021·14 cites·20 claims
- 2396US10957680B2Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 23, 2021·18 cites·1 claims
- 2496US10283566B2Three-dimensional memory device with through-stack contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 7, 2019·21 cites·13 claims
- 2596US6998674B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2005·Granted Feb 14, 2006·28 cites·6 claims
- 2695US10811058B2Bonded assembly containing memory die bonded to integrated peripheral and system die and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 20, 2020·13 cites·20 claims
- 2795US10515897B2Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 24, 2019·14 cites·9 claims
- 2895US7098478B2Semiconductor memory device using vertical-channel transistorsRENESAS TECH CORP·Filed 2005·Granted Aug 29, 2006·33 cites·20 claims
- 2995US6670642B2Semiconductor memory device using vertical-channel transistorsRENESAS TECH CORP·Filed 2002·Granted Dec 30, 2003·83 cites·23 claims
- 3094US10797061B2Three-dimensional memory device having stressed vertical semiconductor channels and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 6, 2020·10 cites·8 claims
- 3194US10700028B2Vertical chip interposer and method of making a chip assembly containing the vertical chip interposerSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 30, 2020·11 cites·16 claims
- 3294US5523592ASemiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the sameHITACHI LTD·Filed 1994·Granted Jun 4, 1996·145 cites·24 claims
- 3393US12058854B2Three-dimensional memory device with isolated source strips and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 6, 2024·2 cites·20 claims
- 3493US10224373B2Three-dimensional ReRAM memory device employing replacement word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 5, 2019·11 cites·10 claims
- 3593US9673304B1Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 6, 2017·10 cites·20 claims
- 3693US7964484B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2009·Granted Jun 21, 2011·14 cites·3 claims
- 3792US8797791B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 5, 2014·7 cites·2 claims
- 3892US8476138B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceCHAKIHARA HIRAKU·Filed 2011·Granted Jul 2, 2013·12 cites·7 claims
- 3991US11889684B2Three-dimensional memory device with separated source-side lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 30, 2024·2 cites·18 claims
- 4091US7705392B2Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Apr 27, 2010·18 cites·4 claims
- 4190US10923496B2Three-dimensional memory device containing a replacement buried source line and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 16, 2021·6 cites·5 claims
- 4290US10797070B2Three-dimensional memory device containing a replacement buried source line and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 6, 2020·5 cites·20 claims
- 4390US7569881B2Semiconductor integrated circuit device with reduced leakage currentRENESAS TECH CORP·Filed 2008·Granted Aug 4, 2009·9 cites·18 claims
- 4489US11133297B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 28, 2021·4 cites·11 claims
- 4589US10923462B2Bifurcated memory die module semiconductor deviceWESTERN DIGITAL TECH INC·Filed 2018·Granted Feb 16, 2021·5 cites·26 claims
- 4689US10797060B2Three-dimensional memory device having stressed vertical semiconductor channels and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 6, 2020·5 cites·11 claims
- 4789US8587970B2Isolated switching power supply apparatus including primary-side and secondary-side digital control circuitsUNO YOSHIYUKI·Filed 2011·Granted Nov 19, 2013·11 cites·9 claims
- 4889US7087942B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2005·Granted Aug 8, 2006·9 cites·12 claims
- 4988US7972920B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2010·Granted Jul 5, 2011·7 cites·12 claims
- 5085US7388238B2Semiconductor integrated circuit device with reduced leakage currentRENESAS TECH CORP·Filed 2006·Granted Jun 17, 2008·6 cites·14 claims
Showing the top 50 of 121 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →