Inventor · disambiguated record
Akinori Seki
Also filed as: SEKI AKINORI
26 granted patents·2 pending applications·248 citations·filing 1988–2019
95Inventor score
Top patents by PatentIndex Score
28 records- 0191US5553089ASemiconductor laser stack with lens and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 1994·Granted Sep 3, 1996·80 cites·7 claims
- 0290US8008180B2Method of forming an OHMIC contact on a P-type 4H-SIC substrateTOYOTA MOTOR CO LTD·Filed 2008·Granted Aug 30, 2011·20 cites·4 claims
- 0376US7879705B2Semiconductor devices and manufacturing method thereofTOYOTA MOTOR CO LTD·Filed 2007·Granted Feb 1, 2011·5 cites·9 claims
- 0470US5070510ASemiconductor laser deviceSHARP KK·Filed 1990·Granted Dec 3, 1991·50 cites·16 claims
- 0568US5365536ASemiconductor laserTOYOTA MOTOR CO LTD·Filed 1993·Granted Nov 15, 1994·25 cites·8 claims
- 0667US9508802B2Gettering process for producing semiconductor deviceDANNO KATSUNORI·Filed 2012·Granted Nov 29, 2016·2 cites·6 claims
- 0762US8716121B2Ohmic electrode and method of forming the sameSEKI AKINORI·Filed 2010·Granted May 6, 2014·2 cites·2 claims
- 0859US8053784B2Silicon carbide semiconductor device and method for manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2007·Granted Nov 8, 2011·1 cites·8 claims
- 0957US8470698B2Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystalSEKI AKINORI·Filed 2009·Granted Jun 25, 2013·0 cites·15 claims
- 1055US5011550ALaminated structure of compound semiconductorsSHARP KK·Filed 1988·Granted Apr 30, 1991·20 cites·6 claims
- 1152US9873955B2Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acidTOYOTA MOTOR CO LTD·Filed 2015·Granted Jan 23, 2018·0 cites·15 claims
- 1252US5604761ALayered semiconductor laser having solder laminations and method of making sameTOYOTA MOTOR CO LTD·Filed 1994·Granted Feb 18, 1997·13 cites·2 claims
- 1349US8399888B2P-type SiC semiconductorSAITOH HIROAKI·Filed 2009·Granted Mar 19, 2013·0 cites·4 claims
- 1449US2013042802A1Method of production of sic single crystalDANNO KATSUNORI·Filed 2009·Application pending·0 cites
- 1548US9587327B2Method of production of sic single crystalDANNO KATSUNORI·Filed 2009·Granted Mar 7, 2017·0 cites·8 claims
- 1646US9903047B2Production method of SiC crystalTOYOTA MOTOR CO LTD·Filed 2016·Granted Feb 27, 2018·0 cites·6 claims
- 1745US11522055B2Stack comprising single-crystal diamond substrateAIST·Filed 2019·Granted Dec 6, 2022·0 cites·6 claims
- 1844US7678671B2Method of forming epitaxial SiC using XPS characterizationTOYOTA MOTOR CO LTD·Filed 2006·Granted Mar 16, 2010·0 cites·15 claims
- 1942US5452316ASemiconductor laser having stacked active layers with reduced drive voltageTOYOTA MOTOR CO LTD·Filed 1994·Granted Sep 19, 1995·8 cites·2 claims
- 2041US8338833B2Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the sameSEKI AKINORI·Filed 2006·Granted Dec 25, 2012·0 cites·14 claims
- 2140US8633101B2Semiconductor device and manufacturing method of semiconductor deviceSUGIMOTO MASAHIRO·Filed 2010·Granted Jan 21, 2014·0 cites·3 claims
- 2238US9157171B2Production method of n-type SiC single crystal, n-type SiC single crystal obtained thereby and application of sameSEKI AKINORI·Filed 2010·Granted Oct 13, 2015·0 cites·9 claims
- 2336US5773334AMethod of manufacturing a semiconductor deviceTOYOTA MOTOR CO LTD·Filed 1995·Granted Jun 30, 1998·4 cites·15 claims
- 2436US5016065ACompound semiconductor substrate with InGaP layerSHARP KK·Filed 1989·Granted May 14, 1991·9 cites·6 claims
- 2534US5111470ASemiconductor laser device and a method of fabricating the sameSHARP KK·Filed 1991·Granted May 5, 1992·4 cites·5 claims
- 2633US2011287626A1Ohmic electrode and method of forming the sameSEKI AKINORI·Filed 2010·Application pending·0 cites
- 2732US5994725AMOSFET having Schottky gate and bipolar deviceTOYOTA MOTOR CO LTD·Filed 1998·Granted Nov 30, 1999·2 cites·11 claims
- 2832US5491106AMethod for growing a compound semiconductor and a method for producing a semiconductor laserSHARP KK·Filed 1993·Granted Feb 13, 1996·3 cites·7 claims
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