Inventor · disambiguated record
Akira Toriumi
Also filed as: TORIUMI AKIRA
24 granted patents·4 pending applications·636 citations·filing 1995–2025
96Inventor score
Top patents by PatentIndex Score
28 records- 0198US9306026B2Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the sameJAPAN SCIENCE & TECH AGENCY·Filed 2015·Granted Apr 5, 2016·41 cites·10 claims
- 0295US6320220B1Quantum tunneling effect device and semiconductor composite substrateTOSHIBA KK·Filed 2000·Granted Nov 20, 2001·97 cites·15 claims
- 0392US6191463B1Apparatus and method of improving an insulating film on a semiconductor deviceTOSHIBA KK·Filed 1998·Granted Feb 20, 2001·128 cites·11 claims
- 0492US6111288AQuantum tunneling effect device and semiconductor composite substrateTOSHIBA KK·Filed 1998·Granted Aug 29, 2000·88 cites·12 claims
- 0587US5463234AHigh-speed semiconductor gain memory cell with minimal area occupancyTOSHIBA KK·Filed 1995·Granted Oct 31, 1995·98 cites·16 claims
- 0684US6642575B1MOS transistor with vertical columnar structureTOSHIBA KK·Filed 1999·Granted Nov 4, 2003·57 cites·11 claims
- 0783US9722026B2Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structureJAPAN SCIENCE & TECH AGENCY·Filed 2014·Granted Aug 1, 2017·8 cites·13 claims
- 0873US9691620B2Semiconductor structure having film including germanium oxide on germanium layer and method of fabricating the sameJAPAN SCIENCE & TECH AGENCY·Filed 2013·Granted Jun 27, 2017·3 cites·10 claims
- 0973US7671426B2Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant filmRENESAS TECH CORP·Filed 2009·Granted Mar 2, 2010·4 cites·8 claims
- 1070US11157805B2Neuron circuit, system, and switch circuitJAPAN SCIENCE & TECH AGENCY·Filed 2017·Granted Oct 26, 2021·2 cites·14 claims
- 1167US5963471ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted Oct 5, 1999·23 cites·3 claims
- 1264US10109710B2Semiconductor device having germanium layer as channel region and method for manufacturing the sameJAPAN SCIENCE & TECH AGENCY·Filed 2015·Granted Oct 23, 2018·1 cites·12 claims
- 1363US7507632B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2007·Granted Mar 24, 2009·2 cites·10 claims
- 1463US2025301758A1Semiconductor device and semiconductor memory deviceKIOXIA CORP·Filed 2025·Application pending·0 cites
- 1561US6208002B1Field effect transistor and manufacturing method thereofTOSHIBA KK·Filed 1999·Granted Mar 27, 2001·25 cites·22 claims
- 1660US12095348B2Current sensor and power conversion circuitJAPAN SCIENCE & TECH AGENCY·Filed 2020·Granted Sep 17, 2024·0 cites·11 claims
- 1758US6060748ASemiconductor integrated circuit device using a silicon-on-insulator substrateTOSHIBA KK·Filed 1997·Granted May 9, 2000·24 cites·11 claims
- 1856US7397094B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Jul 8, 2008·1 cites·16 claims
- 1954US7102203B2Semiconductor device including field-effect transistorNAT INST OF ADVANCED IND SCIEN·Filed 2004·Granted Sep 5, 2006·6 cites·6 claims
- 2054US6690030B2Semiconductor device with negative differential resistance characteristicsTOSHIBA KK·Filed 2001·Granted Feb 10, 2004·6 cites·20 claims
- 2152US9647074B2Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treatedJAPAN SCIENCE & TECH AGENCY·Filed 2014·Granted May 9, 2017·0 cites·6 claims
- 2251US5679961ACorrelation tunnel deviceTOSHIBA KK·Filed 1995·Granted Oct 21, 1997·14 cites·13 claims
- 2347US10748776B2Semiconductor device including contact structureJAPAN SCIENCE & TECH AGENCY·Filed 2017·Granted Aug 18, 2020·0 cites·6 claims
- 2444US5754077ASemiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FETTOSHIBA KK·Filed 1996·Granted May 19, 1998·8 cites·26 claims
- 2541US8063452B2Semiconductor device and method for manufacturing the sameTORIUMI AKIRA·Filed 2005·Granted Nov 22, 2011·0 cites·33 claims
- 2641US2010176478A1Semiconductor device and method for manufacturing the sameUNIV TOKYO·Filed 2008·Application pending·0 cites
- 2739US2006278937A1Semiconductor device and manufacturing method of the sameKADOSHIMA MASARU·Filed 2006·Application pending·0 cites
- 2836US2006071282A1Semiconductor device and manufacturing method thereofKADOSHIMA MASARU·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →