Inventor · disambiguated record
Albert Birner
Also filed as: BIRNER ALBERT
60 granted patents·14 pending applications·362 citations·filing 2001–2025
98Inventor score
Files withINFINEON TECHNOLOGIES AG64BIRNER ALBERT5INFINEON TECHNOLOGIES AUSTRIA AG1SEIDEL UWE1SEIDL HARALD1
Top patents by PatentIndex Score
74 records- 0195US9929107B1Method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 27, 2018·14 cites·20 claims
- 0295US7772123B2Through substrate via semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 10, 2010·41 cites·21 claims
- 0393US9991373B1Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 5, 2018·9 cites·18 claims
- 0493US8399936B2Through substrate via semiconductor componentsBIRNER ALBERT·Filed 2010·Granted Mar 19, 2013·19 cites·25 claims
- 0592US9997443B2Through vias and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 12, 2018·13 cites·42 claims
- 0692US7081384B2Method of forming a silicon dioxide layerINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 25, 2006·82 cites·28 claims
- 0786US6559069B2Process for the electrochemical oxidation of a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 6, 2003·34 cites·9 claims
- 0886US2024413212A1Group iii nitride deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0981US8227340B2Method for producing a copper connection between two sides of a substrateSEIDEL UWE·Filed 2009·Granted Jul 24, 2012·14 cites·19 claims
- 1078US10720359B2Substrate and methodINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 21, 2020·2 cites·15 claims
- 1178US9147610B2Monitor structures and methods of formation thereofBIRNER ALBERT·Filed 2012·Granted Sep 29, 2015·4 cites·15 claims
- 1278US2025240993A1Semiconductor device with a semiconductor body having a type iii-nitride semiconductor portion disposed on a base carrier portionINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1377US12278275B2Selective laser annealing methodINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 15, 2025·0 cites·13 claims
- 1477US10431504B2Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Oct 1, 2019·2 cites·12 claims
- 1577US9543260B2Segmented bond pads and methods of fabrication thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jan 10, 2017·4 cites·31 claims
- 1676US10622284B2LDMOS transistor and methodINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 14, 2020·2 cites·21 claims
- 1776US9530720B2Monitor structures and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 27, 2016·2 cites·17 claims
- 1875US7192830B2Method for fabricating a memory cellINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 20, 2007·20 cites·17 claims
- 1973US12087830B2Group III nitride device and method of fabricating a Group III nitride-based deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Sep 10, 2024·0 cites·8 claims
- 2073US11929405B2Group III nitride-based transistor device having a field plateINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 12, 2024·0 cites·16 claims
- 2172US8815743B2Through substrate via semiconductor components and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 26, 2014·2 cites·14 claims
- 2272US7268381B2Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between themINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 11, 2007·11 cites·17 claims
- 2371US11869963B2Semiconductor device and method of fabricating a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 9, 2024·0 cites·13 claims
- 2471US6919255B2Semiconductor trench structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 19, 2005·16 cites·18 claims
- 2570US11728389B2Group III nitride device having an ohmic contactINFINEON TECHNOLOGIES AG·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 2669US10629727B2Method of manufacturing a semiconductor device including an LDMOS transistorINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 21, 2020·1 cites·21 claims
- 2769US6878600B2Method for fabricating trench capacitors and semiconductor device with trench capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Apr 12, 2005·11 cites·33 claims
- 2869US6660582B2Method of forming a vertical field-effect transistor deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 9, 2003·11 cites·58 claims
- 2968US8035140B2Method and layout of semiconductor device with reduced parasiticsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Oct 11, 2011·3 cites·45 claims
- 3067US11581418B2Selective thermal annealing methodINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·0 cites·13 claims
- 3166US2025159917A1Semiconductor Device and Method for Fabricating a Semiconductor WaferINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 3265US7385256B2Transistor arrangement in monocrystalline substrate having stress exerting insulatorsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jun 10, 2008·3 cites·12 claims
- 3364US7157371B2Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 2, 2007·9 cites·15 claims
- 3463US12230689B2Semiconductor device and method for fabricating a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2021·Granted Feb 18, 2025·0 cites·10 claims
- 3563US11342451B2Semiconductor device and method of fabricating a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 24, 2022·0 cites·9 claims
- 3662US6861312B2Method for fabricating a trench structureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 1, 2005·11 cites·26 claims
- 3760US6863769B2Configuration and method for making contact with the back surface of a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 8, 2005·7 cites·9 claims
- 3859US10403724B2Semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2018·Granted Sep 3, 2019·0 cites·15 claims
- 3958US11302783B2Group III nitride device and method of fabricating an ohmic contact for a group III nitride-based deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 12, 2022·0 cites·10 claims
- 4057US10672686B2LDMOS transistor and methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 2, 2020·0 cites·13 claims
- 4157US10665531B2LDMOS transistorINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 26, 2020·0 cites·16 claims
- 4256US2024030334A1Group iii nitride-based semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 4355US10340334B2Semiconductor device including an LDMOS transistor and a resurf structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 2, 2019·0 cites·20 claims
- 4455US10304789B2LDMOS transistor structure and method of manufactureINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 4553US11031327B2Through vias and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 8, 2021·0 cites·21 claims
- 4653US10074721B2Method of fabricating a semiconductor wafer that includes producing a planarised surface having both a mesa surface and an insulating layer surfaceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Sep 11, 2018·0 cites·13 claims
- 4753US10014230B2Monitor structures and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 3, 2018·0 cites·10 claims
- 4853US7084043B2Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 1, 2006·7 cites·8 claims
- 4952US10026806B2Semiconductor device including an LDMOS transistor and a RESURF structureINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 17, 2018·0 cites·25 claims
- 5052US10020270B2Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and methodINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 10, 2018·0 cites·20 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →