Inventor · disambiguated record
Alain Blosse
Also filed as: BLOSSE ALAIN · BLOSSE ALAIN P · BLOSSE ALAIN PAUL
26 granted patents·6 pending applications·699 citations·filing 2000–2013
97Inventor score
Files withCYPRESS SEMICONDUCTOR CORP20CALISOLAR INC2KAES MARTIN2BLOSSE ALAIN1CYPRESS SEMICONDUCTOR COMPANY1
Top patents by PatentIndex Score
32 records- 0197US7390750B1Method of patterning elements within a semiconductor topographyCYPRESS SEMICONDUCTOR CORP·Filed 2005·Granted Jun 24, 2008·59 cites·15 claims
- 0295US7323411B1Method of selective tungsten deposition on a silicon surfaceCYPRESS SEMICONDUCTOR CORP·Filed 2004·Granted Jan 29, 2008·90 cites·20 claims
- 0395US6620715B1Method for forming sub-critical dimension structures in an integrated circuitCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Sep 16, 2003·135 cites·20 claims
- 0494US7396773B1Method for cleaning a gate stackCYPRESS SEMICONDUCTOR COMPANY·Filed 2002·Granted Jul 8, 2008·128 cites·22 claims
- 0593US6399512B1Method of making metallization and contact structures in an integrated circuit comprising an etch stop layerCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Jun 4, 2002·83 cites·20 claims
- 0690US7830016B2Seed layer for reduced resistance tungsten filmINTEL CORP·Filed 2008·Granted Nov 9, 2010·21 cites·14 claims
- 0783US6635566B1Method of making metallization and contact structures in an integrated circuitCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Oct 21, 2003·31 cites·16 claims
- 0881US7323377B1Increasing self-aligned contact areas in integrated circuits using a disposable spacerCYPRESS SEMICONDUCTOR CORP·Filed 2005·Granted Jan 29, 2008·13 cites·18 claims
- 0980US6682996B1Method for forming a semiconductor structure using a disposable hardmaskCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Jan 27, 2004·24 cites·20 claims
- 1077US8298850B2Bifacial solar cells with overlaid back grid surfaceKAES MARTIN·Filed 2009·Granted Oct 30, 2012·4 cites·16 claims
- 1176US7189652B1Selective oxidation of gate stackCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Mar 13, 2007·21 cites·15 claims
- 1273US6902993B2Gate electrode for MOS transistorsCYPRESS SEMICONDUCTOR CORP·Filed 2003·Granted Jun 7, 2005·15 cites·19 claims
- 1371US6680516B1Controlled thickness gate stackCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Jan 20, 2004·17 cites·20 claims
- 1467US6869850B1Self-aligned contact structure with raised source and drainCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Mar 22, 2005·13 cites·16 claims
- 1566US8547121B2Quality control process for UMG-SI feedstockOUNADJELA KAMEL·Filed 2010·Granted Oct 1, 2013·2 cites·16 claims
- 1666US8404970B2Bifacial solar cells with back surface dopingKAES MARTIN·Filed 2009·Granted Mar 26, 2013·1 cites·8 claims
- 1766US6803321B1Nitride spacer formationCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Oct 12, 2004·12 cites·16 claims
- 1865US2013056061A1Bifacial solar cells with overlaid back grid surfaceSILICOR MATERIAL INC·Filed 2012·Application pending·0 cites
- 1963US9166071B2Polarization resistant solar cell design using an oxygen-rich interface layerPHAN BILL·Filed 2009·Granted Oct 20, 2015·2 cites·13 claims
- 2061US6660661B1Integrated circuit with improved RC delayCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Dec 9, 2003·8 cites·18 claims
- 2161US2013217169A1Bifacial solar cells with back surface dopingSILICOR MATERIALS INC·Filed 2013·Application pending·0 cites
- 2257US6887784B1Self aligned metal interconnection and method of making the sameCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted May 3, 2005·7 cites·33 claims
- 2357US6841878B1Integrated circuit with improved RC delayCYPRESS SEMICONDUCTOR CORP·Filed 2003·Granted Jan 11, 2005·6 cites·12 claims
- 2450US6979640B1Contact structure and method of making the sameCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Dec 27, 2005·4 cites·17 claims
- 2550US2012160296A1Textured photovoltaic cells and methodsLAPARRA OLIVIER·Filed 2011·Application pending·0 cites
- 2647US2009223549A1solar cell and fabrication method using crystalline silicon based on lower grade feedstock materialsCALISOLAR INC·Filed 2008·Application pending·0 cites
- 2745US7151048B1Poly/silicide stack and method of forming the sameCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Dec 19, 2006·2 cites·18 claims
- 2843US7256083B1Nitride layer on a gate stackCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Aug 14, 2007·1 cites·17 claims
- 2940US7018942B1Integrated circuit with improved RC delayCYPRESS SEMICONDUCTOR CORP·Filed 2004·Granted Mar 28, 2006·0 cites·20 claims
- 3040US2004082182A1Method of making metallization and contact structures in an integrated circuit using a timed trench etchCYPRESS SEMICONDUCTOR CORP·Filed 2003·Application pending·0 cites
- 3138US2010310445A1Process Control For UMG-Si Material PurificationCALISOLAR INC·Filed 2010·Application pending·0 cites
- 3229US8080453B1Gate stack having nitride layerBLOSSE ALAIN·Filed 2002·Granted Dec 20, 2011·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →