Inventor · disambiguated record
Albert Chin
Also filed as: CHIN ALBERT · CHIN ALBERT FENG-DER
9 granted patents·11 pending applications·95 citations·filing 2000–2017
85Inventor score
Files withCHIN ALBERT8UNIV NAT CHIAO TUNG4ADVANCED DEVICE RES INC3TAIWAN SEMICONDUCTOR MFG2CHAO DONALD Y1
Top patents by PatentIndex Score
20 records- 0189US8791444B2Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the sameCHIN ALBERT·Filed 2011·Granted Jul 29, 2014·14 cites·5 claims
- 0289US7579646B2Flash memory with deep quantum well and high-K dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 25, 2009·17 cites·13 claims
- 0389US6350311B1Method for forming an epitaxial silicon-germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Feb 26, 2002·57 cites·23 claims
- 0465US9680030B1Enhancement-mode field effect transistor having metal oxide channel layerADVANCED DEVICE RES INC·Filed 2015·Granted Jun 13, 2017·2 cites·27 claims
- 0559US8735963B2Flash memory cells having leakage-inhibition layersWANG MING-TSONG·Filed 2008·Granted May 27, 2014·2 cites·11 claims
- 0659US8159035B2Metal gates of PMOS devices having high work functionsCHAO DONALD Y·Filed 2007·Granted Apr 17, 2012·2 cites·20 claims
- 0756US7754551B2Method for making very low Vt metal-gate/high-κ CMOSFETs using self-aligned low temperature shallow junctionsUNIV NAT CHIAO TUNG·Filed 2008·Granted Jul 13, 2010·1 cites·3 claims
- 0850US2014349472A1Flash memoryUNIV NAT CHIAO TUNG·Filed 2014·Application pending·0 cites
- 0948US8836009B2Flash memoryCHIN ALBERT·Filed 2011·Granted Sep 16, 2014·0 cites·11 claims
- 1043US2009263944A1Method for making low Vt gate-first light-reflective-layer covered dual metal-gates on high-k CMOSFETsCHIN ALBERT·Filed 2008·Application pending·0 cites
- 1140US2009090980A1Asymmetric-ldd mos deviceKING MINGCHU·Filed 2007·Application pending·0 cites
- 1240US2010052037A1Charge-trapping engineered flash non-volatile memoryCHIN ALBERT·Filed 2008·Application pending·0 cites
- 1339US2012113561A1Capacitor device and method for forming the sameCHIN ALBERT·Filed 2010·Application pending·0 cites
- 1438US2019290475A1Reversible hysteroscopic sterilizationCHIN ALBERT·Filed 2017·Application pending·0 cites
- 1538US2013032898A1METAL-GATE/HIGH-k/GE MOSFET WITH LASER ANNEALING AND FABRICATION METHOD THEREOFUNIV NAT CHIAO TUNG·Filed 2011·Application pending·0 cites
- 1636US2018342623A1HfLaO passivated zinc-oxide thin-film transistor with high field-effect mobilityCHIN ALBERT·Filed 2017·Application pending·0 cites
- 1733US6852549B2Ferroelectric thin film processing for ferroelectric field-effect transistorUNIV NAT CHIAO TUNG·Filed 2002·Granted Feb 8, 2005·0 cites·14 claims
- 1829US2011193043A1Ultra-Low Energy RRAM with Good Endurance and RetentionCHIN ALBERT·Filed 2010·Application pending·0 cites
- 1924US2017162710A1Method for Fabricating Enhancement-mode Field Effect Transistor Having Metal Oxide Channel LayerADVANCED DEVICE RES INC·Filed 2015·Application pending·0 cites
- 2023US2017162570A1Complementary Transistor Pair Comprising Field Effect Transistor Having Metal Oxide Channel LayerADVANCED DEVICE RES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →