Inventor · disambiguated record
Alessandro Chini
Also filed as: CHINI ALESSANDRO
13 granted patents·7 pending applications·127 citations·filing 2004–2025
89Inventor score
Top patents by PatentIndex Score
20 records- 0196US7812369B2Fabrication of single or multiple gate field platesUNIV CALIFORNIA·Filed 2004·Granted Oct 12, 2010·113 cites·23 claims
- 0290US10381470B2Double-channel HEMT device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2016·Granted Aug 13, 2019·5 cites·23 claims
- 0386US2025040173A1Double-channel hemt device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0485US11489068B2Double-channel HEMT device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 0583US2025280553A1Hemt transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0681US12148823B2Double-channel HEMT device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Granted Nov 19, 2024·0 cites·16 claims
- 0781US2024178301A1Hemt transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 0879US10522646B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2016·Granted Dec 31, 2019·2 cites·23 claims
- 0973US11862707B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2021·Granted Jan 2, 2024·0 cites·15 claims
- 1072US10109713B2Fabrication of single or multiple gate field platesUNIV CALIFORNIA·Filed 2016·Granted Oct 23, 2018·1 cites·12 claims
- 1167US8610173B2Enhancement/depletion PHEMT deviceCHINI ALESSANDRO·Filed 2012·Granted Dec 17, 2013·4 cites·6 claims
- 1265US11101363B2HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2019·Granted Aug 24, 2021·0 cites·14 claims
- 1365US10892357B2Double-channel HEMT device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2019·Granted Jan 12, 2021·0 cites·20 claims
- 1464US9496353B2Fabrication of single or multiple gate field platesCHINI ALESSANDRO·Filed 2010·Granted Nov 15, 2016·1 cites·36 claims
- 1558US2024313102A1Normally-off heterojunction integrated device and method for manufacturing an integrated deviceST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1658US2024332413A1Hemt device having an improved gate structure and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1756US2025366136A1Normally-off hemt device with improved dynamic performances, and manufacturing method thereofST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1853US2023282727A1Hemt device and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1948US12218231B2HEMT transistor including field plate regions and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2020·Granted Feb 4, 2025·0 cites·19 claims
- 2045US10516041B2HEMT transistor with high stress resilience during off state and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2018·Granted Dec 24, 2019·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →