Inventor · disambiguated record
Alfred Grill
Also filed as: GRILL ALFRED
198 granted patents·30 pending applications·8,699 citations·filing 1990–2021
99Inventor score
Top patents by PatentIndex Score
228 records- 0199US8927968B2Accurate control of distance between suspended semiconductor nanowires and substrate surfaceIBM·Filed 2013·Granted Jan 6, 2015·87 cites·14 claims
- 0299US7049247B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device madeIBM·Filed 2004·Granted May 23, 2006·558 cites·28 claims
- 0399US6479110B2Multiphase low dielectric constant material and method of depositionIBM·Filed 2001·Granted Nov 12, 2002·175 cites·27 claims
- 0499US6413852B1Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder materialIBM·Filed 2000·Granted Jul 2, 2002·264 cites·25 claims
- 0599US6312793B1Multiphase low dielectric constant materialIBM·Filed 1999·Granted Nov 6, 2001·320 cites·14 claims
- 0699US6147009AHydrogenated oxidized silicon carbon materialIBM·Filed 1998·Granted Nov 14, 2000·641 cites·15 claims
- 0798US7282458B2Low K and ultra low K SiCOH dielectric films and methods to form the sameIBM·Filed 2005·Granted Oct 16, 2007·97 cites·11 claims
- 0898US6774010B2Transferable device-containing layer for silicon-on-insulator applicationsIBM·Filed 2001·Granted Aug 10, 2004·376 cites·30 claims
- 0998US6541398B2Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the sameIBM·Filed 2002·Granted Apr 1, 2003·150 cites·34 claims
- 1098US6441491B1Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the sameIBM·Filed 2001·Granted Aug 27, 2002·187 cites·25 claims
- 1198US6437443B1Multiphase low dielectric constant material and method of depositionIBM·Filed 2001·Granted Aug 20, 2002·152 cites·10 claims
- 1298US6316167B1Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereofIBM·Filed 2000·Granted Nov 13, 2001·189 cites·50 claims
- 1398US6140226ADual damascene processing for semiconductor chip interconnectsIBM·Filed 1998·Granted Oct 31, 2000·363 cites·48 claims
- 1498US5789320APlating of noble metal electrodes for DRAM and FRAMIBM·Filed 1996·Granted Aug 4, 1998·326 cites·29 claims
- 1597US6593625B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2002·Granted Jul 15, 2003·182 cites·46 claims
- 1697US6514667B2Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereofIBM·Filed 2001·Granted Feb 4, 2003·108 cites·21 claims
- 1797US6515335B1Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the sameIBM·Filed 2002·Granted Feb 4, 2003·214 cites·27 claims
- 1897US6497963B1Hydrogenated oxidized silicon carbon materialIBM·Filed 2000·Granted Dec 24, 2002·84 cites·30 claims
- 1997US5159508AMagnetic head slider having a protective coating thereonIBM·Filed 1990·Granted Oct 27, 1992·111 cites·5 claims
- 2096US9093507B2Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templatesIBM·Filed 2013·Granted Jul 28, 2015·15 cites·16 claims
- 2196US8361853B2Graphene nanoribbons, method of fabrication and their use in electronic devicesIBM·Filed 2010·Granted Jan 29, 2013·24 cites·21 claims
- 2296US8354296B2Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming sameIBM·Filed 2011·Granted Jan 15, 2013·27 cites·10 claims
- 2396US7479306B2SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the sameIBM·Filed 2005·Granted Jan 20, 2009·26 cites·1 claims
- 2496US7030468B2Low k and ultra low k SiCOH dielectric films and methods to form the sameIBM·Filed 2004·Granted Apr 18, 2006·71 cites·45 claims
- 2596US6448176B1Dual damascene processing for semiconductor chip interconnectsIBM·Filed 2000·Granted Sep 10, 2002·102 cites·5 claims
- 2695US8642996B2Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templatesCOHEN GUY·Filed 2011·Granted Feb 4, 2014·15 cites·20 claims
- 2795US7510904B2Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetectorIBM·Filed 2006·Granted Mar 31, 2009·22 cites·14 claims
- 2895US6815329B2Multilayer interconnect structure containing air gaps and method for makingIBM·Filed 2002·Granted Nov 9, 2004·105 cites·13 claims
- 2995US6709903B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2003·Granted Mar 23, 2004·86 cites·45 claims
- 3095US5945155ALow dielectric constant amorphous fluorinated carbon and method of preparationIBM·Filed 1997·Granted Aug 31, 1999·73 cites·8 claims
- 3195US5796166ATasin oxygen diffusion barrier in multilayer structuresIBM·Filed 1996·Granted Aug 18, 1998·122 cites·7 claims
- 3295US5559367ADiamond-like carbon for use in VLSI and ULSI interconnect systemsIBM·Filed 1994·Granted Sep 24, 1996·178 cites·42 claims
- 3394US7288292B2Ultra low k (ULK) SiCOH film and methodIBM·Filed 2003·Granted Oct 30, 2007·49 cites·20 claims
- 3494US6855649B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2002·Granted Feb 15, 2005·90 cites·63 claims
- 3594US6756323B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor deviceIBM·Filed 2001·Granted Jun 29, 2004·73 cites·64 claims
- 3694US6265779B1Method and material for integration of fuorine-containing low-k dielectricsIBM·Filed 1998·Granted Jul 24, 2001·139 cites·18 claims
- 3793US9472450B2Graphene cap for copper interconnect structuresBONILLA GRISELDA·Filed 2012·Granted Oct 18, 2016·13 cites·5 claims
- 3893US8828762B2Carbon nanostructure device fabrication utilizing protect layersIBM·Filed 2012·Granted Sep 9, 2014·10 cites·14 claims
- 3993US8440999B2Semiconductor chip with graphene based devices in an interconnect structure of the chipDIMITRAKOPOULOS CHRISTOS D·Filed 2011·Granted May 14, 2013·14 cites·18 claims
- 4093US7491658B2Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionalityIBM·Filed 2004·Granted Feb 17, 2009·63 cites·16 claims
- 4193US6737725B2Multilevel interconnect structure containing air gaps and method for makingIBM·Filed 2002·Granted May 18, 2004·70 cites·12 claims
- 4292US9435031B2Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the sameIBM·Filed 2014·Granted Sep 6, 2016·4 cites·9 claims
- 4392US8981466B2Multilayer dielectric structures for semiconductor nano-devicesIBM·Filed 2013·Granted Mar 17, 2015·13 cites·15 claims
- 4492US8927057B2Graphene formation utilizing solid phase carbon sourcesBOL AGEETH A·Filed 2010·Granted Jan 6, 2015·14 cites·13 claims
- 4592US8877340B2Graphene growth on a non-hexagonal latticeCHU JACK O·Filed 2010·Granted Nov 4, 2014·12 cites·14 claims
- 4692US7737052B2Advanced multilayer dielectric cap with improved mechanical and electrical propertiesIBM·Filed 2008·Granted Jun 15, 2010·21 cites·10 claims
- 4792US7312524B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device madeIBM·Filed 2006·Granted Dec 25, 2007·23 cites·30 claims
- 4892US6768200B2Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor deviceIBM·Filed 2002·Granted Jul 27, 2004·44 cites·17 claims
- 4992US6740535B2Enhanced T-gate structure for modulation doped field effect transistorsIBM·Filed 2002·Granted May 25, 2004·53 cites·17 claims
- 5092US5625233AThin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxideIBM·Filed 1995·Granted Apr 29, 1997·116 cites·19 claims
Showing the top 50 of 228 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →