Inventor · disambiguated record
Alfio Guarnera
Also filed as: GUARNERA ALFIO
17 granted patents·14 pending applications·18 citations·filing 2006–2025
89Inventor score
Top patents by PatentIndex Score
31 records- 0191US11798981B24H—SiC electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2021·Granted Oct 24, 2023·2 cites·18 claims
- 0282US12308235B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2023·Granted May 20, 2025·0 cites·17 claims
- 0379US11495508B2Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2020·Granted Nov 8, 2022·1 cites·18 claims
- 0478US11854809B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2022·Granted Dec 26, 2023·0 cites·18 claims
- 0576US11018008B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2018·Granted May 25, 2021·1 cites·20 claims
- 0676US8455956B2Multi-drain semiconductor power device and edge-termination structure thereofSAGGIO MARIO GIUSEPPE·Filed 2009·Granted Jun 4, 2013·7 cites·22 claims
- 0776US2025038060A1Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0874US12342582B24H-SiC electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2023·Granted Jun 24, 2025·0 cites·9 claims
- 0974US8901652B2Power MOSFET comprising a plurality of columnar structures defining the charge balancing regionSAGGIO MARIO GIUSEPPE·Filed 2010·Granted Dec 2, 2014·5 cites·32 claims
- 1073US12125762B2Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2022·Granted Oct 22, 2024·0 cites·18 claims
- 1173US2025280573A14h-sic electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 1271US11545362B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 1367US8455318B2Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor deviceGUARNERA ALFIO·Filed 2006·Granted Jun 4, 2013·2 cites·35 claims
- 1467US2022344467A14h-sic mosfet device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 1562US2025043460A1Manufacturing process for silicon carbide power devices with variable dopant concentrationST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1660US11329131B24H-SiC MOSFET device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2020·Granted May 10, 2022·0 cites·10 claims
- 1758US2024297249A1Electronic device with auto aligned csl and edge termination structure, and manufacturing method thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1858US2024258377A1Silicon carbide power mosfet device having improved performances and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1957US2024258422A1Power mosfet device with protection against the contaminants and related manufacturing processST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 2056US2024006527A1Electronic device with reduced switching oscillationsST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 2154US2024014286A1Power mosfet device with isolated gate structure and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 2254US2023134850A1Semiconductor power device with short circuit protection and process for manufacturing a semiconductor power deviceST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 2354US2023317843A1Electronic device with reduced switching oscillationsST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 2453US2025294801A1Power mosfet provided with a variable transparency edge ring formed by a high-depth auto-aligned implantST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 2553US2024297043A1Process for manufacturing a power electronic device having a current spreading layerST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 2651US12255233B2Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Granted Mar 18, 2025·0 cites·20 claims
- 2751US8866223B2Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor deviceGUARNERA ALFIO·Filed 2012·Granted Oct 21, 2014·0 cites·25 claims
- 2851US8853779B2Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor deviceGUARNERA ALFIO·Filed 2012·Granted Oct 7, 2014·0 cites·7 claims
- 2951US8828809B2Multi-drain semiconductor power device and edge-termination structure thereofST MICROELECTRONICS SRL·Filed 2013·Granted Sep 9, 2014·0 cites·28 claims
- 3050US12249634B2Vertical-conduction silicon carbide MOSFET device having improved gate biasing structure and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 3148US2025203977A1Silicon carbide vertical conduction mosfet device for power applications and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →