Inventor · disambiguated record
Alfred Haeusler
Also filed as: HAEUSLER ALFRED
16 granted patents·6 pending applications·799 citations·filing 2001–2017
94Inventor score
Files withTEXAS INSTRUMENTS INC9HAEUSLER ALFRED3SGL CARBON SE3BABCOCK JEFFREY A2TEXAS INSTRUMENTS DEUTSCHLAND2
Top patents by PatentIndex Score
22 records- 0198US8129246B2Advanced CMOS using super steep retrograde wellsBABCOCK JEFFREY A·Filed 2011·Granted Mar 6, 2012·120 cites·1 claims
- 0298US7883977B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2009·Granted Feb 8, 2011·124 cites·4 claims
- 0398US7655523B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2007·Granted Feb 2, 2010·124 cites·10 claims
- 0498US7501324B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 10, 2009·121 cites·9 claims
- 0598US7199430B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 3, 2007·138 cites·3 claims
- 0698US7064399B2Advanced CMOS using super steep retrograde wellsTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 20, 2006·148 cites·5 claims
- 0786US8703568B2Advanced CMOS using super steep retrograde wellsBABCOCK JEFFREY A·Filed 2012·Granted Apr 22, 2014·4 cites·3 claims
- 0881US8603374B2Processes for producing a polymer-bonded fiber agglomerate and a fiber-reinforced composite materialDOMAGALSKI PETER·Filed 2011·Granted Dec 10, 2013·7 cites·19 claims
- 0978US8648432B2Fully embedded micromechanical device, system on chip and method for manufacturing the sameHAEUSLER ALFRED·Filed 2011·Granted Feb 11, 2014·4 cites·13 claims
- 1063US8093115B2Tuning of SOI substrate dopingSCHWARTZ WOLFGANG·Filed 2010·Granted Jan 10, 2012·2 cites·6 claims
- 1157US7217322B2Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layerTEXAS INSTRUMENTS INC·Filed 2004·Granted May 15, 2007·5 cites·15 claims
- 1255US10696600B2Method for producing a ceramic component composed of a plurality of joined preforms and component obtained by the methodSGL CARBON SE·Filed 2017·Granted Jun 30, 2020·0 cites·20 claims
- 1350US2013280906A1Semiconductor device including a deep contact and a method of manufacturing such a deviceTEXAS INSTRUMENTS DEUTSCHLAND·Filed 2013·Application pending·0 cites
- 1448US7888225B2Method of manufacturing an electronic device including a PNP bipolar transistorTEXAS INSTRUMENTS DEUTSCHLAND·Filed 2009·Granted Feb 15, 2011·0 cites·7 claims
- 1548US2010148308A1Dopant Profile Control for Ultrashallow Arsenic Dopant ProfilesTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1647US2014044979A1Method for producing a ceramic component composed of a plurality of joined preforms and component obtained by the methodSGL CARBON SE·Filed 2013·Application pending·0 cites
- 1745US6774455B2Semiconductor device with a collector contact in a depressed well-regionTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 10, 2004·2 cites·9 claims
- 1844US8470679B2Semiconductor device including a deep contact and a method of manufacturing such a deviceHAEUSLER ALFRED·Filed 2010·Granted Jun 25, 2013·0 cites·7 claims
- 1940US2013115390A1Method for producing a component and component produced by the methodSGL CARBON SE·Filed 2012·Application pending·0 cites
- 2038US2004209433A1Method for manufacturing and structure of semiconductor device with shallow trench collector contact regionFiled 2004·Application pending·0 cites
- 2137US7118981B2Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistorTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 10, 2006·0 cites·19 claims
- 2236US2012205775A1Method for manufacturing an electronic deviceHAEUSLER ALFRED·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →