Inventor · disambiguated record
Alexander Lidow
Also filed as: LIDOW ALEXANDER
42 granted patents·6 pending applications·1,626 citations·filing 1980–2025
98Inventor score
Files withEFFICIENT POWER CONVERSION CORP19INT RECTIFIER CORP19LIDOW ALEXANDER7EFFICIENT POWER CONV CORP2CAO JIANJUN1
Top patents by PatentIndex Score
48 records- 0199US4376286AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1981·Granted Mar 8, 1983·154 cites·26 claims
- 0298US4593302AProcess for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxideINT RECTIFIER CORP·Filed 1980·Granted Jun 3, 1986·173 cites·14 claims
- 0397US4705759AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1983·Granted Nov 10, 1987·98 cites·7 claims
- 0496US8823012B2Enhancement mode GaN HEMT device with gate spacer and method for fabricating the sameLIDOW ALEXANDER·Filed 2012·Granted Sep 2, 2014·31 cites·11 claims
- 0596US8404508B2Enhancement mode GaN HEMT device and method for fabricating the sameLIDOW ALEXANDER·Filed 2010·Granted Mar 26, 2013·27 cites·5 claims
- 0696US8017978B2Hybrid semiconductor deviceINT RECTIFIER CORP·Filed 2006·Granted Sep 13, 2011·40 cites·14 claims
- 0796US4399449AComposite metal and polysilicon field plate structure for high voltage semiconductor devicesINT RECTIFIER CORP·Filed 1980·Granted Aug 16, 1983·95 cites·16 claims
- 0895US8368120B2Hybrid semiconductor device having a GaN transistor and a silicon MOSFETINT RECTIFIER CORP·Filed 2011·Granted Feb 5, 2013·20 cites·15 claims
- 0995US4959699AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1989·Granted Sep 25, 1990·92 cites·24 claims
- 1095US4642666AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1983·Granted Feb 10, 1987·76 cites·10 claims
- 1194US8436398B2Back diffusion suppression structuresLIDOW ALEXANDER·Filed 2010·Granted May 7, 2013·21 cites·19 claims
- 1294US5742087AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1995·Granted Apr 21, 1998·90 cites·13 claims
- 1394US5008725APlural polygon source pattern for MOSFETINT RECTIFIER CORP·Filed 1988·Granted Apr 16, 1991·102 cites·14 claims
- 1493US9607876B2Semiconductor devices with back surface isolationLIDOW ALEXANDER·Filed 2011·Granted Mar 28, 2017·13 cites·31 claims
- 1593US4680853AProcess for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxideINT RECTIFIER CORP·Filed 1986·Granted Jul 21, 1987·114 cites·12 claims
- 1692US8350294B2Compensated gate MISFET and method for fabricating the sameEFFICIENT POWER CONVERSION CORP·Filed 2010·Granted Jan 8, 2013·16 cites·12 claims
- 1792US5598018AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1995·Granted Jan 28, 1997·77 cites·5 claims
- 1891US10312131B2Semiconductor devices with back surface isolationEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·7 cites·4 claims
- 1991US8890168B2Enhancement mode GaN HEMT deviceEFFICIENT POWER CONVERSION CORP·Filed 2013·Granted Nov 18, 2014·14 cites·17 claims
- 2091US5338961AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1993·Granted Aug 16, 1994·67 cites·50 claims
- 2189US9837438B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Dec 5, 2017·6 cites·8 claims
- 2289US9214461B2GaN transistors with polysilicon layers for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·9 cites·12 claims
- 2388US5191396AHigh power mosfet with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1989·Granted Mar 2, 1993·50 cites·10 claims
- 2488US4412242APlanar structure for high voltage semiconductor devices with gaps in glassy layer over high field regionsINT RECTIFIER CORP·Filed 1980·Granted Oct 25, 1983·67 cites·15 claims
- 2587US8853749B2Ion implanted and self aligned gate structure for GaN transistorsLIDOW ALEXANDER·Filed 2012·Granted Oct 7, 2014·8 cites·17 claims
- 2687US4789882AHigh power MOSFET with direct connection from connection pads to underlying siliconINT RECTIFIER CORP·Filed 1983·Granted Dec 6, 1988·42 cites·7 claims
- 2784US9748347B2Gate with self-aligned ledged for enhancement mode GaN transistorsEFFICIENT POWER CONV CORP·Filed 2014·Granted Aug 29, 2017·5 cites·3 claims
- 2882US10312260B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·3 cites·17 claims
- 2982US9171911B2Isolation structure in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Oct 27, 2015·6 cites·26 claims
- 3082US5130767APlural polygon source pattern for mosfetINT RECTIFIER CORP·Filed 1991·Granted Jul 14, 1992·73 cites·8 claims
- 3171US8969918B2Enhancement mode gallium nitride transistor with improved gate characteristicsLIDOW ALEXANDER·Filed 2010·Granted Mar 3, 2015·3 cites·1 claims
- 3270US10601300B2Integrated gallium nitride based DC-DC converterEFFICIENT POWER CONVERSION CORP·Filed 2018·Granted Mar 24, 2020·1 cites·20 claims
- 3367US8785974B2Bumped, self-isolated GaN transistor chip with electrically isolated back surfaceLIDOW ALEXANDER·Filed 2010·Granted Jul 22, 2014·2 cites·11 claims
- 3465US11050339B2Integrated circuit with multiple gallium nitride transistor setsEFFICIENT POWER CONVERSION CORP·Filed 2020·Granted Jun 29, 2021·0 cites·8 claims
- 3565US9583480B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONV CORP·Filed 2015·Granted Feb 28, 2017·1 cites·11 claims
- 3665US2025374643A1GaN HEMT WITH LOW THRESHOLD VOLTAGE SHIFT USING A HOLE INJECTOR/COLLECTOREFFICIENT POWER CONVERSION CORP·Filed 2025·Application pending·0 cites
- 3762US10600674B2Semiconductor devices with back surface isolationEFFICIENT POWER CONVERSION CORP·Filed 2019·Granted Mar 24, 2020·0 cites·13 claims
- 3861US9214399B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·1 cites·20 claims
- 3960US2024413205A1GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIEREFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
- 4059US9331191B2GaN device with reduced output capacitance and process for making sameEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted May 3, 2016·1 cites·11 claims
- 4158US2024234521A1GaN DEVICE WITH UNIFORM ELECTRIC FIELDEFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
- 4258US2024274681A1GaN DEVICE WITH HOLE ELIMINATION CENTERSEFFICIENT POWER CONVERSION CORP·Filed 2024·Application pending·0 cites
- 4356US2025275216A1GaN DEVICE WITH HOLE ELIMINATION CENTERSEFFICIENT POWER CONVERSION CORP·Filed 2025·Application pending·0 cites
- 4455US10312335B2Gate with self-aligned ledge for enhancement mode GaN transistorsEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·0 cites·7 claims
- 4554US4416708AMethod of manufacture of high speed, high power bipolar transistorINT RECTIFIER CORP·Filed 1982·Granted Nov 22, 1983·18 cites·11 claims
- 4652US7955969B2Ultra thin FETINT RECTIFIER CORP·Filed 2006·Granted Jun 7, 2011·3 cites·18 claims
- 4746US9214528B2Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·0 cites·22 claims
- 4834US2011248283A1Via structure of a semiconductor device and method for fabricating the sameCAO JIANJUN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →