Inventor · disambiguated record
Alain Loiseau
Also filed as: LOISEAU ALAIN · LOISEAU ALAIN F · LOISEAU ALAIN FRANÇOIS
87 granted patents·13 pending applications·284 citations·filing 2000–2025
99Inventor score
Top patents by PatentIndex Score
100 records- 0194US10128158B2Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistorIBM·Filed 2017·Granted Nov 13, 2018·6 cites·20 claims
- 0294US7821553B2Pixel array, imaging sensor including the pixel array and digital camera including the imaging sensorIBM·Filed 2005·Granted Oct 26, 2010·25 cites·5 claims
- 0391US11804481B2Fin-based and bipolar electrostatic discharge devicesGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 31, 2023·2 cites·19 claims
- 0490US10096587B1Fin-based diode structures with a realigned feature layoutGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 9, 2018·7 cites·20 claims
- 0590US8908334B1Electrostatic discharge protection for a magnetoresistive sensorIBM·Filed 2013·Granted Dec 9, 2014·9 cites·19 claims
- 0689US11658480B2Ultra-low leakage electrostatic discharge device with controllable trigger voltageGLOBALFOUNDRIES US INC·Filed 2020·Granted May 23, 2023·2 cites·16 claims
- 0789US7719590B2High dynamic range imaging cell with electronic shutter extensionsIBM·Filed 2007·Granted May 18, 2010·13 cites·16 claims
- 0889US7439561B2Pixel sensor cell for collecting electrons and holesIBM·Filed 2005·Granted Oct 21, 2008·8 cites·2 claims
- 0988US10819110B2Electrostatic discharge protection deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 27, 2020·5 cites·20 claims
- 1088US10290626B1High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted May 14, 2019·5 cites·18 claims
- 1188US9875945B2Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistorIBM·Filed 2017·Granted Jan 23, 2018·3 cites·20 claims
- 1287US10720425B2Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistorIBM·Filed 2018·Granted Jul 21, 2020·2 cites·20 claims
- 1387US9929144B2Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistorIBM·Filed 2016·Granted Mar 27, 2018·3 cites·4 claims
- 1487US7948535B2High dynamic range imaging cell with electronic shutter extensionsIBM·Filed 2007·Granted May 24, 2011·11 cites·4 claims
- 1587US6441396B1In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor waferIBM·Filed 2000·Granted Aug 27, 2002·36 cites·18 claims
- 1686US8028924B2Device and method for providing an integrated circuit with a unique identificationIBM·Filed 2009·Granted Oct 4, 2011·15 cites·21 claims
- 1786US7315066B2Protect diodes for hybrid-orientation substrate structuresIBM·Filed 2005·Granted Jan 1, 2008·12 cites·15 claims
- 1885US11848324B2Efuse inside and gate structure on triple-well regionGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 19, 2023·1 cites·20 claims
- 1985US9673116B2On chip electrostatic discharge (ESD) event monitoringIBM·Filed 2013·Granted Jun 6, 2017·6 cites·12 claims
- 2085US9640988B2Comparative ESD power clampIBM·Filed 2014·Granted May 2, 2017·5 cites·20 claims
- 2185US7538373B2Body potential imager cellIBM·Filed 2007·Granted May 26, 2009·7 cites·6 claims
- 2284US9978743B1Voltage balanced stacked clampIBM·Filed 2017·Granted May 22, 2018·3 cites·1 claims
- 2383US10003191B2Space efficient and power spike resistant ESD power clamp with digitally timed latchIBM·Filed 2015·Granted Jun 19, 2018·2 cites·20 claims
- 2481US6534389B1Dual level contacts and method for formingIBM·Filed 2000·Granted Mar 18, 2003·34 cites·6 claims
- 2579US7888156B2Predoped transfer gate for a CMOS image sensorIBM·Filed 2007·Granted Feb 15, 2011·4 cites·8 claims
- 2678US11349304B2Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuitGLOBALFOUNDRIES US INC·Filed 2020·Granted May 31, 2022·1 cites·18 claims
- 2778US8341434B2Optimizing voltage on a power plane using a networked voltage regulation module arrayGERVAIS GILLES·Filed 2008·Granted Dec 25, 2012·9 cites·12 claims
- 2877US12336302B1Vertical device triggered silicon control rectifierGLOBALFOUNDRIES US INC·Filed 2024·Granted Jun 17, 2025·0 cites·18 claims
- 2977US10770892B2Space efficient and power spike resistant ESD power clamp with digitally timed latchIBM·Filed 2018·Granted Sep 8, 2020·1 cites·15 claims
- 3076US12107083B2Fin-based and bipolar electrostatic discharge devicesGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 1, 2024·0 cites·18 claims
- 3176US7276748B2Body potential imager cellIBM·Filed 2005·Granted Oct 2, 2007·3 cites·7 claims
- 3275US10361293B1Vertical fin-type devices and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 23, 2019·2 cites·16 claims
- 3375US7739573B2Voltage identifier sortingIBM·Filed 2007·Granted Jun 15, 2010·7 cites·20 claims
- 3474US11335674B2Diode triggered silicon controlled rectifier (SCR) with hybrid diodesGLOBALFOUNDRIES US INC·Filed 2019·Granted May 17, 2022·1 cites·20 claims
- 3573US7799609B2Method of manufacturing dual orientation wafersIBM·Filed 2007·Granted Sep 21, 2010·4 cites·17 claims
- 3672US12300627B1Integrated circuit structures having a watermarkGLOBALFOUNDRIES US INC·Filed 2024·Granted May 13, 2025·0 cites·8 claims
- 3772US9940986B2Electrostatic discharge protection structures for eFusesGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 10, 2018·2 cites·20 claims
- 3871US2025344515A1Vertical device triggered silicon control rectifierGLOBALFOUNDRIES US INC·Filed 2025·Application pending·0 cites
- 3970US11769767B2Diode triggered silicon controlled rectifierGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 26, 2023·0 cites·16 claims
- 4069US11791626B2Electrostatic discharge clamp structuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 4168US7687340B2Protect diodes for hybrid-orientation substrate structuresIBM·Filed 2007·Granted Mar 30, 2010·3 cites·5 claims
- 4266US6649429B2In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor waferIBM·Filed 2002·Granted Nov 18, 2003·9 cites·2 claims
- 4365US12068308B2Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor wellGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 4465US10347624B2Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistorIBM·Filed 2017·Granted Jul 9, 2019·0 cites·19 claims
- 4565US10269657B2Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistorIBM·Filed 2017·Granted Apr 23, 2019·0 cites·13 claims
- 4664US12506070B2Electronically programmable fuse with heating transistorsGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 4764US10128157B2Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistorIBM·Filed 2017·Granted Nov 13, 2018·0 cites·20 claims
- 4864US9960155B2Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistorIBM·Filed 2017·Granted May 1, 2018·0 cites·19 claims
- 4964US7288788B2Predoped transfer gate for an image sensorIBM·Filed 2004·Granted Oct 30, 2007·8 cites·3 claims
- 5064US2025391783A1Integrated circuit structures having a watermarkGLOBALFOUNDRIES US INC·Filed 2025·Application pending·0 cites
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →