Inventor · disambiguated record
Alok Vaid
Also filed as: VAID ALOK
20 granted patents·10 pending applications·50 citations·filing 2007–2021
92Inventor score
Files withGLOBALFOUNDRIES INC18NOVA MEASURING INSTR LTD2VAID ALOK2ADVANCED MICRO DEVICES INC1CEN CHENG1
Top patents by PatentIndex Score
30 records- 0186US10664638B1Measuring complex structures in semiconductor fabricationGLOBALFOUNDRIES INC·Filed 2018·Granted May 26, 2020·7 cites·23 claims
- 0283US9121890B2Planar metrology pad adjacent a set of fins of a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 1, 2015·5 cites·15 claims
- 0382US8892237B2Systems and methods for fabricating semiconductor device structures using different metrology toolsGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 18, 2014·5 cites·20 claims
- 0481US10030971B2Measurement system and method for measuring in thin filmsGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 24, 2018·5 cites·13 claims
- 0581US9330985B2Automated hybrid metrology for semiconductor device fabricationVAID ALOK·Filed 2012·Granted May 3, 2016·11 cites·19 claims
- 0677US11906451B2Method and system for non-destructive metrology of thin layersNOVA LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 0777US9129905B2Planar metrology pad adjacent a set of fins of a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 8, 2015·3 cites·15 claims
- 0872US11300948B2Process control of semiconductor fabrication based on spectra quality metricsGLOBALFOUNDRIES INC·Filed 2019·Granted Apr 12, 2022·1 cites·20 claims
- 0972US8869081B2Automating integrated circuit device library generation in model based metrologyIBM·Filed 2013·Granted Oct 21, 2014·3 cites·15 claims
- 1072US7838308B2Method of controlling embedded material/gate proximityADVANCED MICRO DEVICES INC·Filed 2008·Granted Nov 23, 2010·3 cites·22 claims
- 1166US10302414B2Scatterometry method and systemNOVA MEASURING INSTR LTD·Filed 2015·Granted May 28, 2019·2 cites·8 claims
- 1262US9903707B2Three-dimensional scatterometry for measuring dielectric thicknessGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 27, 2018·1 cites·8 claims
- 1362US9177873B2Systems and methods for fabricating semiconductor device structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 3, 2015·1 cites·18 claims
- 1462US7682845B2Methods for calibrating a process for growing an epitaxial silicon film and methods for growing an epitaxial silicon filmGLOBALFOUNDRIES INC·Filed 2007·Granted Mar 23, 2010·1 cites·16 claims
- 1561US2018172609A1Method and system for non-destructive metrology of thin layersNOVA MEASURING INSTR LTD·Filed 2017·Application pending·0 cites
- 1659US10976666B1Apparatus and related method to control radiation transmission through mask patternGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 13, 2021·0 cites·18 claims
- 1759US8157978B2Etching system and method for forming multiple porous semiconductor regions with different optical and structural properties on a single semiconductor waferSENDELBACH MATTHEW J·Filed 2009·Granted Apr 17, 2012·2 cites·11 claims
- 1850US10508900B2Three-dimensional scatterometry for measuring dielectric thicknessGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 17, 2019·0 cites·8 claims
- 1950US10121711B2Planar metrology pad adjacent a set of fins of a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 6, 2018·0 cites·13 claims
- 2046US2009228132A1Method and apparatus for controlling stressed layer gate proximityLENSING KEVIN R·Filed 2008·Application pending·0 cites
- 2146US2014073114A1In-situ active wafer charge screening by conformal groundingGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2245US9281249B2Decoupling measurement of layer thicknesses of a plurality of layers of a circuit structureGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 8, 2016·0 cites·22 claims
- 2345US2015348913A1Planar metrology pad adjacent a set of fins in a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2444US2008248598A1Method and apparatus for determining characteristics of a stressed material using scatterometryPAL ROHIT·Filed 2007·Application pending·0 cites
- 2542US2017018069A1Hybrid metrology techniqueGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2640US2013200501A1In-situ active wafer charge screening by conformal groundingCEN CHENG·Filed 2012·Application pending·0 cites
- 2736US2017199511A1Signal detection metholodogy for fabrication controlGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 2836US2020279783A1Process control of semiconductor fabrication based on linkage between different fabrication stepsGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 2931US9995692B2Systems and methods of controlling a manufacturing process for a microelectronic componentGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 12, 2018·0 cites·20 claims
- 3031US2013203188A1Hybrid metrology for semiconductor devicesVAID ALOK·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →