Inventor · disambiguated record
Allen Zhao
Also filed as: ZHAO ALLEN
20 granted patents·4 pending applications·1,827 citations·filing 1995–2022
97Inventor score
Top patents by PatentIndex Score
24 records- 0198US6080529AMethod of etching patterned layers useful as masking during subsequent etching or for damascene structuresAPPLIED MATERIALS INC·Filed 1998·Granted Jun 27, 2000·551 cites·9 claims
- 0296US6458516B1Method of etching dielectric layers using a removable hardmaskAPPLIED MATERIALS INC·Filed 2000·Granted Oct 1, 2002·113 cites·23 claims
- 0396US6331380B1Method of pattern etching a low K dielectric layerAPPLIED MATERIALS INC·Filed 2000·Granted Dec 18, 2001·159 cites·44 claims
- 0495US6352081B1Method of cleaning a semiconductor device processing chamber after a copper etch processAPPLIED MATERIALS INC·Filed 1999·Granted Mar 5, 2002·252 cites·15 claims
- 0595US6143476AMethod for high temperature etching of patterned layers using an organic mask stackAPPLIED MATERIALS INC·Filed 1997·Granted Nov 7, 2000·186 cites·37 claims
- 0693US5753044ARF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1995·Granted May 19, 1998·91 cites·121 claims
- 0791US6514857B1Damascene structure fabricated using a layer of silicon-based photoresist materialAPPLIED MATERIALS INC·Filed 2001·Granted Feb 4, 2003·57 cites·16 claims
- 0891US6204168B1Damascene structure fabricated using a layer of silicon-based photoresist materialAPPLIED MATERIALS INC·Filed 1998·Granted Mar 20, 2001·113 cites·9 claims
- 0987US6270617B1RF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1997·Granted Aug 7, 2001·48 cites·49 claims
- 1083US6475335B1RF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 2000·Granted Nov 5, 2002·18 cites·162 claims
- 1183US5777289ARF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1996·Granted Jul 7, 1998·35 cites·13 claims
- 1281US6547978B2Method of heating a semiconductor substrateAPPLIED MATERIALS INC·Filed 2001·Granted Apr 15, 2003·26 cites·18 claims
- 1380US5779926APlasma process for etching multicomponent alloysAPPLIED MATERIALS INC·Filed 1996·Granted Jul 14, 1998·62 cites·35 claims
- 1479US6008140ACopper etch using HCI and HBr chemistryAPPLIED MATERIALS INC·Filed 1997·Granted Dec 28, 1999·47 cites·8 claims
- 1577US6248250B1RF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1997·Granted Jun 19, 2001·29 cites·31 claims
- 1675US6825562B2Damascene structure fabricated using a layer of silicon-based photoresist materialAPPLIED MATERIALS INC·Filed 2002·Granted Nov 30, 2004·14 cites·9 claims
- 1775US6534416B1Control of patterned etching in semiconductor featuresAPPLIED MATERIALS INC·Filed 2000·Granted Mar 18, 2003·15 cites·7 claims
- 1872US12507350B2Manufacturing component carrier with cavity by trimming poorly adhesive structure before removing stack materialAT & S AUSTRIA TECH & SYSTEMTECHNIK AG·Filed 2022·Granted Dec 23, 2025·0 cites·19 claims
- 1961US12490382B2Coreless component carrier with embedded componentsAT & S AUSTRIA TECH & SYSTEMTECHNIK AG·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 2050US2007026665A1Method of fabricating a dual damascene interconnect structureAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2148US6489247B1Copper etch using HCl and HBR chemistryAPPLIED MATERIALS INC·Filed 1999·Granted Dec 3, 2002·11 cites·42 claims
- 2242US2005059234A1Method of fabricating a dual damascene interconnect structureAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 2336US2011162674A1In-situ process chamber clean to remove titanium nitride etch by-productsAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 2429US2020397558A1Removable ureteral stents and methods of use of the sameBAYLOR COLLEGE MEDICINE·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →